HiPerFETTM Power MOSFETs IXFL 60N60 VDSS ISOPLUS264TM = 600 V = 60 A Ω = 80 mΩ ID25 (Electrically Isolated Backside) RDS(on) Single Die MOSFET Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 600 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 600 V VGS Continuous ±20 V VGSM Transient ±30 V ID25 TC= 25°C, Chip capability 60 A IDM TC= 25°C, pulse width limited by TJM 240 A IAR TC= 25°C 60 A EAR TC= 25°C 64 mJ EAS TC= 25°C 4 J dv/dt IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 2 Ω 5 V/ns PD TC= 25°C 700 W FC Mouting Force 30...150/7...33 N/lb -55 ... +150 °C z Low RDS (on) HDMOSTM process Rugged polysilicon gate cell structure TJ ISOPLUS-264TM G Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation z Low drain to tab capacitance(<30pF) 150 °C -55 ... +150 °C z 2500 3000 V~ V~ Md Mounting torque Terminal connection torque 1.5/13 Nm/lb.in. 1.5/13 Nm/lb.in. Weight Symbol 8 Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. VDSS VGS = 0 V, ID = 3 mA 600 VGH(th) V DS = VGS, ID = 8 mA 2.0 IGSS VGS = ±20 VDC, VDS = 0 IDSS VDS = VDSS VGS = 0 V RDS(on) VGS = 10 V, ID = IT Notes 1, 2 © 2003 IXYS All rights reserved g TJ = 25°C TJ = 125°C V D = Drain z Tstg t = 1 min t=1s (Backside) Features TJM 50/60 Hz, RMS IISOL ≤ 1 mA S G = Gate S = Source z VISOL D Unclamped Inductive Switching (UIS) rated z Fast intrinsic Rectifier Applications z DC-DC converters z Battery chargers Switched-mode and resonant-mode power supplies DC choppers z z z AC motor control 4.0 V Advantages ±200 nA z Easy assembly 100 2 µA mA z Space savings z 80 mΩ High power density DS99093(10/03) IXFL60N60 Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. gfs VDS = 15 V; ID = 0.5 • ID25, pulse test 40 60 S 10000 pF 1600 pF Crss 360 pF td(on) 43 ns 52 ns 110 ns 26 ns 380 nC 78 nC 190 nC Ciss Coss VGS = 0 V, VDS = 25 V, f = 1 MHz tr VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 td(off) RG = 1 Ω (External), tf Qg(on) Qgs VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 Qgd 0.18 RthJC RthCK 0.05 Source-Drain Diode ISOPLUS 264 OUTLINE K/W K/W Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. Symbol Test Conditions IS VGS = 0 V ISM Repetitive; pulse width limited by TJM VSD IF = IS, VGS = 0 V, Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % t rr QRM IRM IF = 25A, -di/dt = 100 A/µs, VR = 100 V 1.5 10 60 A 240 A 1.3 V 250 ns µC A Notes: 1. Pulse test, t ≤ 300 µs, duty cycle d ≤ 2% 2. Test current IT = 30A IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343