HiPerFETTM Power MOSFETs IXFR 180N07 TM ISOPLUS247 (Electrically Isolated Back Surface) VDSS = 70 V ID25 = 180 A RDS(on) = 6 mW trr £ 250 ns Single MOSFET Die Preliminary data sheet Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW VGS VGSM ISOPLUS 247TM 70 70 V V Continuous Transient ±20 ±30 V V ID25 ID(RMS) IDM IAR TC = 25°C (MOSFET chip capability) External lead (current limit) TC = 25°C, Note 1 TC = 25°C 180 76 720 180 A A A A EAR EAS TC = 25°C TC = 25°C 60 3 mJ J dv/dt IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS TJ £ 150°C, RG = 2 W 5 V/ns PD TC = 25°C 400 W TJ -55 ... +150 °C Features TJM Tstg 150 -55 ... +150 °C °C 300 °C 2500 V~ 5 g • Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation • Low drain to tab capacitance(<25pF) • Low RDS (on) HDMOSTM process • Rugged polysilicon gate cell structure • Unclamped Inductive Switching (UIS) rated • Fast intrinsic Rectifier TL 1.6 mm (0.063 in.) from case for 10 s VISOL 50/60 Hz, RMS t = 1 min Weight Symbol Test Conditions VDSS VGS = 0 V, ID = 3mA 70 VDS = VGS, ID = 8mA 2.0 VGS(th) IGSS VGS = ±20 V, VDS = 0 IDSS VDS = VDSS VGS = 0 V RDS(on) VGS = 10 V, ID = 0.5 ID25 Note 1 Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 4.0 V ±100 nA TJ = 25°C TJ = 125°C IXYS reserves the right to change limits, test conditions, and dimensions. © 2000 IXYS All rights reserved V 100 mA 2 mA 6 mW G D Isolated back surface* G = Gate S = Source D = Drain * Patent pending Applications • DC-DC converters • Battery chargers • Switched-mode and resonant-mode power supplies • DC choppers • AC motor control Advantages • Easy assembly • Space savings • High power density 98585A (6/99) 1-2 IXFR 180N07 Symbol Test Conditions gfs VDS = 10 V; ID = 60A Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. Note 2 C iss Coss VGS = 0 V, VDS = 25 V, f = 1 MHz C rss td(on) tr VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 ID25 td(off) RG = 1 W (External) tf Qg(on) Qgs VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 ID25 Qgd 55 90 S 9400 pF 4600 pF 2550 pF 65 ns 90 ns 140 ns 55 ns 420 nC 65 nC 220 nC RthJC 0.30 0.15 RthCK Source-Drain Diode K/W K/W Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. Symbol Test Conditions IS VGS = 0 V 180 A ISM Repetitive; pulse width limited by TJM 720 A VSD IF = 100A, VGS = 0 V, Note 1 1.3 V 250 ns t rr QRM IF = 50A,-di/dt = 100 A/ms, VR = 50 V IRM 1.2 mC 10 A ISOPLUS 247 (IXFR) OUTLINE 1 Gate, 2 Drain (Collector) 3 Source (Emitter) 4 no connection Dim. Millimeter Min. Max. A 4.83 5.21 A1 2.29 2.54 A2 1.91 2.16 b 1.14 1.40 1.91 2.13 b1 b2 2.92 3.12 C 0.61 0.80 D 20.80 21.34 E 15.75 16.13 e 5.45 BSC L 19.81 20.32 L1 3.81 4.32 Q 5.59 6.20 R 4.32 4.83 S 13.21 13.72 T 15.75 16.26 U 1.65 3.03 Inches Min. Max. .190 .205 .090 .100 .075 .085 .045 .055 .075 .084 .115 .123 .024 .031 .819 .840 .620 .635 .215 BSC .780 .800 .150 .170 .220 .244 .170 .190 .520 .540 .620 .640 .065 .080 Note: 1. Pulse width limited by TJM 2. Pulse test, t £ 300 ms, duty cycle d £ 2 % © 2000 IXYS All rights reserved IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 2-2