IXYS IXFT75N10Q

Advanced Technical Information
IXFH 75N10Q
IXFT 75N10Q
HiPerFETTM
Power MOSFETs
VDSS
ID25
RDS(on)
Q-Class
trr £ 200ns
N-Channel Enhancement Mode
Avalanche Rated, High dv/dt
Low Gate Charge and Capacitances
Symbol
Test Conditions
VDSS
VDGR
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGS = 1 MΩ
100
100
V
V
VGS
VGSM
Continuous
Transient
±20
±30
V
V
I D25
TC = 25°C
75
A
IDM
TC = 25°C, pulse width limited by TJM
300
A
I AR
TC = 25°C
75
A
EAR
TC = 25°C
30
mJ
EAS
TC = 25°C
1.5
J
dv/dt
I S ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS,
Maximum Ratings
5
V/ns
TO-247 AD (IXFH)
(TAB)
TO-268 (IXFT) Case Style
G
TJ ≤ 150°C, RG = 2 Ω
PD
TC = 25°C
TJ
TJM
Tstg
TL
1.6 mm (0.062 in.) from case for 10 s
Md
Mounting torque
Weight
TO-247 AD
TO-268
W
-55 ... +150
150
-55 ... +150
°C
°C
°C
300
°C
6
4
g
g
Characteristic Values
Min. Typ.
Max.
VDSS
VGS = 0 V, ID = 250 µA
100
VGS(th)
VDS = VGS, ID = 4 mA
2.0
I GSS
VGS = ±20 VDC, VDS = 0
I DSS
VDS = VDSS
VGS = 0 V
TJ = 25°C
TJ = 125°C
VGS = 10 V, ID = 0.5 ID25
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
© 1999 IXYS All rights reserved
300
1.13/10 Nm/lb.in.
Symbol
Test Conditions
(TJ = 25°C, unless otherwise specified)
RDS(on)
= 100 V
= 75 A
= 20 mW
V
4
V
±100
nA
25
1
µA
mA
20
mΩ
G = Gate
S = Source
(TAB)
S
D = Drain
TAB = Drain
Features
l
l
l
l
l
l
IXYS advanced low gate charge
process
International standard packages
Low gate charge and capacitance
- easier to drive
- faster switching
Low RDS (on)
Unclamped Inductive Switching (UIS)
rated
Molding epoxies meet UL 94 V-0
flammability classification
Advantages
l
l
l
Easy to mount
Space savings
High power density
98550A (6/99)
IXFH 75N10Q
IXFT 75N10Q
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
Min. Typ. Max.
gfs
VDS = 10 V; ID = 0.5 ID25, pulse test
30
45
S
3700
pF
1300
pF
Crss
425
pF
td(on)
31
ns
Ciss
Coss
VGS = 0 V, VDS = 25 V, f = 1 MHz
tr
VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25
65
ns
td(off)
RG = 4.7 Ω (External)
65
ns
28
ns
tf
Qg(on)
Qgs
140 180
VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25
Qgd
30
nC
65
nC
RthJC
RthCK
0.42
(TO-247)
Source-Drain Diode
K/W
0.25
K/W
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
Symbol
Test Conditions
IS
VGS = 0 V
ISM
Repetitive;
VSD
I F = IS, VGS = 0 V,
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
t rr
QRM
IRM
nC
I F = 50A,-di/dt = 100 A/µs, VR = 50 V
75
A
300
A
1.5
V
200
ns
µC
A
0.85
8
TO-247 AD Outline
1
2
3
Terminals: 1 - Gate
3 - Source
Dim.
2 - Drain
Tab - Drain
Millimeter
Min.
Max.
A
4.7
5.3
A1
2.2
2.54
A2
2.2
2.6
b
1.0
1.4
b1
1.65
2.13
b2
2.87
3.12
C
.4
.8
D
20.80 21.46
E
15.75 16.26
e
5.20
5.72
L
19.81 20.32
L1
4.50
∅P 3.55
3.65
Q
5.89
6.40
R
4.32
5.49
S
6.15 BSC
Inches
Min. Max.
.185 .209
.087 .102
.059 .098
.040 .055
.065 .084
.113 .123
.016 .031
.819 .845
.610 .640
0.205 0.225
.780 .800
.177
.140 .144
0.232 0.252
.170 .216
242 BSC
TO-268 Outline
Min Recommended Footprint
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592
4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,486,715
5,381,025