Advanced Technical Information HiPerFETTM Power MOSFETs IXFH 16N90Q IXFK 16N90Q IXFT 16N90Q Q-Class VDSS = 900 V = 16 A ID25 RDS(on) = 0.65 W trr £ 250 ns N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW 900 900 V V VGS VGSM Continuous Transient ±20 ±30 V V ID25 IDM IAR TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C 16 64 16 A A A EAR EAS TC = 25°C TC = 25°C 45 1.5 mJ J dv/dt IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS, TJ £ 150°C, RG = 2 W 5 V/ns PD TC = 25°C TJ TJM Tstg 360 W -55 ... +150 150 -55 ... +150 °C °C °C 300 °C TO-247 AD (IXFH) (TAB) TO-268 (D3) ( IXFT) G S TO-264 AA (IXFK) G D TL 1.6 mm (0.063 in) from case for 10 s Md Mounting torque TO-247 TO-264 Weight TO-247 TO-268 TO-264 1.13/10 Nm/lb.in. 0.9/6 Nm/lb.in. 6 4 10 G = Gate S = Source D (TAB) S TAB = Drain g g g Features Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. VDSS VGS = 0 V, ID = 250 mA 900 VGS(th) VDS = VGS, ID = 4 mA 3.0 IGSS VGS = ±20 VDC, VDS = 0 IDSS VDS = VDSS VGS = 0 V RDS(on) V 5.0 V ±200 nA TJ = 25°C TJ = 125°C 50 2 mA mA VGS = 10 V, ID = 0.5 • ID25 Pulse test, t £ 300 ms, duty cycle d £ 2 % 0.65 IXYS reserves the right to change limits, test conditions, and dimensions. © 2000 IXYS All rights reserved W • IXYS advanced low Qg process • International standard packages • Epoxy meet UL 94 V-0, flammability classification • Low RDS (on) low Qg • Avalanche energy and current rated • Fast intrinsic rectifier Advantages • Easy to mount • Space savings • High power density 98668 (11/99) 1-2 IXFH 16N90Q IXFK 16N90Q IXFT 16N90Q Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. gfs VDS = 10 V; ID = 0.5 • ID25, pulse test 10 17 S 4000 pF 430 pF C rss 155 pF td(on) 21 ns C iss Coss VGS = 0 V, VDS = 25 V, f = 1 MHz tr VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 24 ns td(off) RG = 2.0 W (External), 56 ns 14 tf Qg(on) Qgs 133 VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 Qgd 19.81 20.32 20.80 21.46 0.780 0.800 0.819 0.845 ns C D 15.75 16.26 3.55 3.65 0.610 0.640 0.140 0.144 nC E F 4.32 5.49 5.4 6.2 0.170 0.216 0.212 0.244 G H 1.65 2.13 4.5 0.065 0.084 0.177 J K 1.0 1.4 10.8 11.0 0.040 0.055 0.426 0.433 67 nC 0.25 0.15 Inches Min. Max. A B nC 0.35 TO-247 TO-264 Dim. Millimeter Min. Max. 25 RthJC RthCK 170 TO-247 AD (IXFH) Outline K/W K/W K/W L M 4.7 0.4 5.3 0.8 0.185 0.209 0.016 0.031 N 1.5 2.49 0.087 0.102 TO-264 AA (IXFK) Outline Source-Drain Diode Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. Symbol Test Conditions IS VGS = 0 V 16 A ISM Repetitive; pulse width limited by TJM 60 A VSD IF = IS, VGS = 0 V, Pulse test, t £ 300 ms, duty cycle d £ 2 % 1.5 V 250 ns mC A t rr QRM IRM 1 8 IF = IS -di/dt = 100 A/ms, VR = 100 V TO-268AA (IXFT) (D3 PAK) Dim. A A1 A2 b b2 C D E E1 e H L L1 L2 L3 L4 © 2000 IXYS All rights reserved Millimeter Min. Max. 4.9 5.1 2.7 2.9 .02 .25 1.15 1.45 1.9 2.1 .4 .65 13.80 14.00 15.85 16.05 13.3 13.6 5.45 BSC 18.70 19.10 2.40 2.70 1.20 1.40 1.00 1.15 0.25 BSC 3.80 4.10 Inches Min. Max. .193 .201 .106 .114 .001 .010 .045 .057 .75 .83 .016 .026 .543 .551 .624 .632 .524 .535 .215 BSC .736 .752 .094 .106 .047 .055 .039 .045 .010 BSC .150 .161 Dim. A A1 A2 b b1 b2 c D E e J K L L1 P Q Q1 R R1 S T Millimeter Min. Max. 4.82 2.54 2.00 1.12 2.39 2.90 0.53 25.91 19.81 5.46 0.00 0.00 20.32 2.29 3.17 6.07 8.38 3.81 1.78 6.04 1.57 5.13 2.89 2.10 1.42 2.69 3.09 0.83 26.16 19.96 BSC 0.25 0.25 20.83 2.59 3.66 6.27 8.69 4.32 2.29 6.30 1.83 Inches Min. Max. .190 .202 .100 .114 .079 .083 .044 .056 .094 .106 .114 .122 .021 .033 1.020 1.030 .780 .786 .215 BSC .000 .010 .000 .010 .800 .820 .090 .102 .125 .144 .239 .247 .330 .342 .150 .170 .070 .090 .238 .248 .062 .072 Min. Recommended Footprint IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 2-2