HiPerFETTM Power MOSFETs IXFH 80N10Q IXFT 80N10Q VDSS ID25 = 100 V = 80 A = 15 mW RDS(on) Q-Class trr £ 200ns N-Channel Enhancement Mode Avalanche Rated, High dV/dt Low Gate Charge and Capacitances Preliminary data Symbol Test Conditions VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW 100 100 V V VGS VGSM Continuous Transient ±20 ±30 V V ID25 TC = 25°C 80 A IDM TC = 25°C, pulse width limited by TJM 320 A IAR TC = 25°C 80 A EAR TC = 25°C 30 mJ EAS TC = 25°C 1.5 J dv/dt IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS, TJ £ 150°C, RG = 2 W 5 V/ns PD Maximum Ratings TJ TJM Tstg 1.6 mm (0.062 in.) from case for 10 s Md Mounting torque Weight 360 W -55 ... +150 150 -55 ... +150 °C °C °C 300 °C (TO-247) 6 4 g g Characteristic Values Min. Typ. Max. VDSS VGS = 0 V, ID = 250 mA 100 VGS(th) VDS = VGS, ID = 4 mA 2.0 IGSS VGS = ±20 VDC, VDS = 0 IDSS VDS = VDSS VGS = 0 V RDS(on) V 4 V ±100 nA TJ = 25°C TJ = 125°C 25 1 mA mA VGS = 10 V, ID = 0.5 ID25 Pulse test, t £ 300 ms, duty cycle d £ 2 % 15 mW IXYS reserves the right to change limits, test conditions, and dimensions. © 2000 IXYS All rights reserved TO-268 (IXFT) Case Style G (TAB) G = Gate S = Source D = Drain TAB = Drain Features 1.13/10 Nm/lb.in. TO-247 AD TO-268 Symbol Test Conditions (TJ = 25°C, unless otherwise specified) (TAB) S TC = 25°C TL TO-247 AD (IXFH) • IXYS advanced low gate charge process • International standard packages • Low gate charge and capacitance - easier to drive - faster switching • Low RDS (on) • Unclamped Inductive Switching (UIS) rated • Molding epoxies meet UL 94 V-0 flammability classification Advantages • Easy to mount • Space savings • High power density 98592B (7/00) 1-2 IXFH 80N10Q IXFT 80N10Q Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) Min. Typ. Max. gfs VDS = 10 V; ID = 0.5 ID25, pulse test 30 Ciss Coss VGS = 0 V, VDS = 25 V, f = 1 MHz C rss td(on) 45 S 4500 pF 1600 pF 870 pF TO-247 AD (IXFH) Outline 30 ns tr VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 70 ns td(off) RG = 1.5 W (External) 68 ns 30 ns 180 nC 36 nC 95 nC A B 19.81 20.32 20.80 21.46 0.780 0.800 0.819 0.845 K/W C D 15.75 16.26 3.55 3.65 0.610 0.640 0.140 0.144 E F 4.32 5.49 5.4 6.2 0.170 0.216 0.212 0.244 G H 1.65 2.13 4.5 0.065 0.084 0.177 J K 1.0 1.4 10.8 11.0 0.040 0.055 0.426 0.433 tf Qg(on) Qgs VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 Qgd RthJC RthCK 0.35 (TO-247) Source-Drain Diode Symbol Test Conditions IS VGS = 0 V ISM VSD t rr QRM IRM 0.25 K/W Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 80 A Repetitive; pulse width limited by TJM 320 A IF = IS, VGS = 0 V, Pulse test, t £ 300 ms, duty cycle d £ 2 % 1.5 V 200 ns mC A IF = 25A,-di/dt = 100 A/ms, VR = 50 V TO-268AA (D3 PAK) Dim. A A1 A2 b b2 C D E E1 e H L L1 L2 L3 L4 © 2000 IXYS All rights reserved 0.85 8 Millimeter Min. Max. 4.9 5.1 2.7 2.9 .02 .25 1.15 1.45 1.9 2.1 .4 .65 13.80 14.00 15.85 16.05 13.3 13.6 5.45 BSC 18.70 19.10 2.40 2.70 1.20 1.40 1.00 1.15 0.25 BSC 3.80 4.10 Inches Min. Max. .193 .201 .106 .114 .001 .010 .045 .057 .75 .83 .016 .026 .543 .551 .624 .632 .524 .535 .215 BSC .736 .752 .094 .106 .047 .055 .039 .045 .010 BSC .150 .161 Dim. Millimeter Min. Max. Inches Min. Max. L M 4.7 0.4 5.3 0.8 0.185 0.209 0.016 0.031 N 1.5 2.49 0.087 0.102 Min. Recommended Footprint IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 2-2