IXYS IXFT12N90Q

HiPerFETTM
Power MOSFETs
Q Class
IXFH 12N90Q
IXFT 12N90Q
N-Channel Enhancement Mode
Avalanche Rated
Low Qg, High dv/dt
VDSS
ID25
RDS(on)
= 900 V
= 12 A
= 0.9 W
trr £ 200 ns
Preliminary data sheet
Symbol
Test Conditions
Maximum Ratings
VDSS
TJ = 25°C to 150°C
900
V
VDGR
TJ = 25°C to 150°C; RGS = 1 MW
900
V
VGS
Continuous
±20
V
VGSM
Transient
±30
V
ID25
TC = 25°C
12
A
IDM
48
A
IAR
TC = 25°C,
pulse width limited by TJM
TC = 25°C
12
A
EAR
TC = 25°C
30
mJ
dv/dt
IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS,
TJ £ 150°C, RG = 2 W
5
V/ns
PD
TC = 25°C
300
W
-55 ... +150
°C
TJM
150
°C
Tstg
-55 ... +150
°C
300
°C
1.13/10
Nm/lb.in.
6
4
g
g
TJ
TL
1.6 mm (0.063 in) from case for 10 s
Md
Mounting torque
Weight
TO-247 AD
TO-268
TO-247 AD (IXFH)
TO-268 (D3) ( IXFT)
G
S
G = Gate
S = Source
D = Drain
TAB = Drain
Features
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min.
typ.
max.
VDSS
VGS = 0 V, ID = 3 mA
900
VGS(th)
VDS = VGS, ID = 4 mA
2.5
IGSS
VGS = ±20 VDC, VDS = 0
IDSS
VDS = 0.8 • VDSS
VGS = 0 V
RDS(on)
V
5.5
V
±100
nA
TJ = 25°C
TJ = 125°C
50
1
mA
mA
VGS = 10 V, ID = 0.5 ID25
Pulse test, t £ 300 ms, duty cycle d £ 2 %
0.9
W
IXYS reserves the right to change limits, test conditions, and dimensions.
© 2000 IXYS All rights reserved
• IXYS advanced low Qg process
• Low gate charge and capacitances
- easier to drive
- faster switching
• International standard packages
• Low RDS (on)
• Unclamped Inductive Switching (UIS)
rated
• Molding epoxies meet UL 94 V-0
flammability classification
Advantages
• Easy to mount
• Space savings
• High power density
98572 (11/98)
1-2
IXFH 12N90Q
IXFT 12N90Q
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
gfs
VDS = 10 V; ID = 0.5 • ID25, pulse test
6
C iss
Coss
VGS = 0 V, VDS = 25 V, f = 1 MHz
C rss
td(on)
10
S
2900
pF
315
pF
50
pF
TO-247 AD (IXFH) Outline
20
ns
tr
VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
23
ns
td(off)
RG = 2 W (External),
40
ns
15
ns
90
nC
30
nC
40
nC
A
B
19.81 20.32
20.80 21.46
0.780 0.800
0.819 0.845
K/W
C
D
15.75 16.26
3.55 3.65
0.610 0.640
0.140 0.144
E
F
4.32 5.49
5.4
6.2
0.170 0.216
0.212 0.244
G
H
1.65 2.13
4.5
0.065 0.084
0.177
J
K
1.0
1.4
10.8 11.0
0.040 0.055
0.426 0.433
tf
Qg(on)
Qgs
VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
Qgd
RthJC
RthCK
0.42
(TO-247)
Source-Drain Diode
0.25
K/W
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
Symbol
Test Conditions
IS
VGS = 0 V
12
A
ISM
Repetitive; pulse width limited by TJM
48
A
VSD
IF = IS, VGS = 0 V,
Pulse test, t £ 300 ms, duty cycle d £ 2 %
1.3
V
t rr
QRM
IRM
IF = IS, -di/dt = 100 A/ms, VR = 100 V
TO-268AA (D3 PAK)
Dim.
A
A1
A2
b
b2
C
D
E
E1
e
H
L
L1
L2
L3
L4
© 2000 IXYS All rights reserved
Millimeter
Min. Max.
4.9
5.1
2.7
2.9
.02
.25
1.15
1.45
1.9
2.1
.4
.65
13.80 14.00
15.85 16.05
13.3
13.6
5.45 BSC
18.70 19.10
2.40
2.70
1.20
1.40
1.00
1.15
0.25 BSC
3.80
4.10
200
0.6
7
Inches
Min. Max.
.193 .201
.106 .114
.001 .010
.045 .057
.75
.83
.016 .026
.543 .551
.624 .632
.524 .535
.215 BSC
.736 .752
.094 .106
.047 .055
.039 .045
.010 BSC
.150 .161
Dim. Millimeter
Min. Max.
Inches
Min. Max.
L
M
4.7
0.4
5.3
0.8
0.185 0.209
0.016 0.031
N
1.5 2.49
0.087 0.102
ns
mC
A
Min. Recommended Footprint
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592
4,881,106
5,017,508
5,049,961
5,187,117
5,486,715
4,850,072
4,931,844
5,034,796
5,063,307
5,237,481
5,381,025
2-2