HiPerFETTM Power MOSFETs IXFH 80N20Q IXFK 80N20Q IXFT 80N20Q Q-Class N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low Qg VDSS ID25 RDS(on) trr = 200 V = 80 A = 28 mW £ 200 ns Preliminary data sheet Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW 200 200 V V VGS VGSM Continuous Transient ±20 ±30 V V ID25 IDM IAR TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C 80 320 80 A A A EAR EAS TC = 25°C TC = 25°C 45 1.5 mJ J dv/dt IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS, TJ £ 150°C, RG = 2 W 5 V/ns PD TC = 25°C 360 W -55 ... +150 150 -55 ... +150 °C °C °C 300 °C TJ TJM Tstg TL 1.6 mm (0.063 in) from case for 10 s Md Mounting torque Weight TO-247 TO-264 1.13/10 Nm/lb.in. 0.9/6 Nm/lb.in. TO-247 TO-264 TO-268 6 10 4 TO-247 AD (IXFH) (TAB) TO-268 (D3) ( IXFT) G (TAB) S TO-264 AA (IXFK) G D G = Gate S = Source D (TAB) S TAB = Drain g g g Features Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. VDSS VGS = 0 V, ID = 250 uA 200 VGS(th) VDS = VGS, ID = 4 mA 2.0 IGSS VGS = ±20 VDC, VDS = 0 IDSS VDS = VDSS VGS = 0 V RDS(on) VGS = 10 V, ID = 0.5 • ID25 Pulse test, t £ 300 ms, duty cycle d £ 2 % TJ = 25°C TJ = 125°C IXYS reserves the right to change limits, test conditions, and dimensions. © 2000 IXYS All rights reserved V 4.0 V ±100 nA 25 1 mA mA 28 mW • Low gate charge • International standard packages • Epoxy meet UL 94 V-0, flammability classification • Low RDS (on) HDMOSTM process • Rugged polysilicon gate cell structure • Avalanche energy and current rated • Fast intrinsic Rectifier Advantages • Easy to mount • Space savings • High power density 98605A (6/99) 1-2 IXFH 80N20Q IXFK 80N20Q IXFT 80N20Q Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. gfs VDS = 10 V; ID = 0.5 • ID25, pulse test 35 45 S 4600 pF 1100 pF C rss 500 pF td(on) 26 ns C iss Coss VGS = 0 V, VDS = 25 V, f = 1 MHz tr VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 50 ns td(off) RG = 2.0 W (External), 75 ns 20 tf Qg(on) Qgs VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 Qgd Inches Min. Max. 19.81 20.32 20.80 21.46 0.780 0.800 0.819 0.845 ns C D 15.75 16.26 3.55 3.65 0.610 0.640 0.140 0.144 180 nC E F 4.32 5.49 5.4 6.2 0.170 0.216 0.212 0.244 39 nC 100 nC G H 1.65 2.13 4.5 0.065 0.084 0.177 J K 1.0 1.4 10.8 11.0 0.040 0.055 0.426 0.433 0.35 TO-247 TO-264 Dim. Millimeter Min. Max. A B RthJC RthCK TO-247 AD (IXFH) Outline 0.25 0.15 K/W K/W K/W L M 4.7 0.4 5.3 0.8 0.185 0.209 0.016 0.031 N 1.5 2.49 0.087 0.102 TO-264 AA (IXFK) Outline Source-Drain Diode Symbol Test Conditions IS VGS = 0 V ISM VSD t rr QRM IRM Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 80 A Repetitive; pulse width limited by TJM 320 A IF = IS, VGS = 0 V, Pulse test, t £ 300 ms, duty cycle d £ 2 % 1.5 V 200 ns mC A 1.2 10 IF = IS -di/dt = 100 A/ms, VR = 100 V TO-268AA (D3 PAK) Dim. A A1 A2 b b2 C D E E1 e H L L1 L2 L3 L4 © 2000 IXYS All rights reserved Millimeter Min. Max. 4.9 5.1 2.7 2.9 .02 .25 1.15 1.45 1.9 2.1 .4 .65 13.80 14.00 15.85 16.05 13.3 13.6 5.45 BSC 18.70 19.10 2.40 2.70 1.20 1.40 1.00 1.15 0.25 BSC 3.80 4.10 Inches Min. Max. .193 .201 .106 .114 .001 .010 .045 .057 .75 .83 .016 .026 .543 .551 .624 .632 .524 .535 .215 BSC .736 .752 .094 .106 .047 .055 .039 .045 .010 BSC .150 .161 Dim. A A1 A2 b b1 b2 c D E e J K L L1 P Q Q1 R R1 S T Millimeter Min. Max. 4.82 2.54 2.00 1.12 2.39 2.90 0.53 25.91 19.81 5.46 0.00 0.00 20.32 2.29 3.17 6.07 8.38 3.81 1.78 6.04 1.57 5.13 2.89 2.10 1.42 2.69 3.09 0.83 26.16 19.96 BSC 0.25 0.25 20.83 2.59 3.66 6.27 8.69 4.32 2.29 6.30 1.83 Inches Min. Max. .190 .202 .100 .114 .079 .083 .044 .056 .094 .106 .114 .122 .021 .033 1.020 1.030 .780 .786 .215 BSC .000 .010 .000 .010 .800 .820 .090 .102 .125 .144 .239 .247 .330 .342 .150 .170 .070 .090 .238 .248 .062 .072 Min. Recommended Footprint IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 2-2