IXYS IXFT80N20Q

HiPerFETTM
Power MOSFETs
IXFH 80N20Q
IXFK 80N20Q
IXFT 80N20Q
Q-Class
N-Channel Enhancement Mode
Avalanche Rated, High dv/dt, Low Qg
VDSS
ID25
RDS(on)
trr
= 200 V
= 80 A
= 28 mW
£ 200 ns
Preliminary data sheet
Symbol
Test Conditions
Maximum Ratings
VDSS
VDGR
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGS = 1 MW
200
200
V
V
VGS
VGSM
Continuous
Transient
±20
±30
V
V
ID25
IDM
IAR
TC = 25°C
TC = 25°C, pulse width limited by TJM
TC = 25°C
80
320
80
A
A
A
EAR
EAS
TC = 25°C
TC = 25°C
45
1.5
mJ
J
dv/dt
IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS,
TJ £ 150°C, RG = 2 W
5
V/ns
PD
TC = 25°C
360
W
-55 ... +150
150
-55 ... +150
°C
°C
°C
300
°C
TJ
TJM
Tstg
TL
1.6 mm (0.063 in) from case for 10 s
Md
Mounting torque
Weight
TO-247
TO-264
1.13/10 Nm/lb.in.
0.9/6 Nm/lb.in.
TO-247
TO-264
TO-268
6
10
4
TO-247 AD (IXFH)
(TAB)
TO-268 (D3) ( IXFT)
G
(TAB)
S
TO-264 AA (IXFK)
G
D
G = Gate
S = Source
D (TAB)
S
TAB = Drain
g
g
g
Features
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
VDSS
VGS = 0 V, ID = 250 uA
200
VGS(th)
VDS = VGS, ID = 4 mA
2.0
IGSS
VGS = ±20 VDC, VDS = 0
IDSS
VDS = VDSS
VGS = 0 V
RDS(on)
VGS = 10 V, ID = 0.5 • ID25
Pulse test, t £ 300 ms, duty cycle d £ 2 %
TJ = 25°C
TJ = 125°C
IXYS reserves the right to change limits, test conditions, and dimensions.
© 2000 IXYS All rights reserved
V
4.0
V
±100
nA
25
1
mA
mA
28 mW
• Low gate charge
• International standard packages
• Epoxy meet UL 94 V-0, flammability
classification
• Low RDS (on) HDMOSTM process
• Rugged polysilicon gate cell structure
• Avalanche energy and current rated
• Fast intrinsic Rectifier
Advantages
• Easy to mount
• Space savings
• High power density
98605A (6/99)
1-2
IXFH 80N20Q IXFK 80N20Q
IXFT 80N20Q
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
gfs
VDS = 10 V; ID = 0.5 • ID25, pulse test
35
45
S
4600
pF
1100
pF
C rss
500
pF
td(on)
26
ns
C iss
Coss
VGS = 0 V, VDS = 25 V, f = 1 MHz
tr
VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
50
ns
td(off)
RG = 2.0 W (External),
75
ns
20
tf
Qg(on)
Qgs
VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
Qgd
Inches
Min. Max.
19.81 20.32
20.80 21.46
0.780 0.800
0.819 0.845
ns
C
D
15.75 16.26
3.55 3.65
0.610 0.640
0.140 0.144
180
nC
E
F
4.32 5.49
5.4
6.2
0.170 0.216
0.212 0.244
39
nC
100
nC
G
H
1.65 2.13
4.5
0.065 0.084
0.177
J
K
1.0
1.4
10.8 11.0
0.040 0.055
0.426 0.433
0.35
TO-247
TO-264
Dim. Millimeter
Min. Max.
A
B
RthJC
RthCK
TO-247 AD (IXFH) Outline
0.25
0.15
K/W
K/W
K/W
L
M
4.7
0.4
5.3
0.8
0.185 0.209
0.016 0.031
N
1.5 2.49
0.087 0.102
TO-264 AA (IXFK) Outline
Source-Drain Diode
Symbol
Test Conditions
IS
VGS = 0 V
ISM
VSD
t rr
QRM
IRM
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min.
typ. max.
80
A
Repetitive; pulse width limited by TJM
320
A
IF = IS, VGS = 0 V,
Pulse test, t £ 300 ms, duty cycle d £ 2 %
1.5
V
200
ns
mC
A
1.2
10
IF = IS -di/dt = 100 A/ms, VR = 100 V
TO-268AA (D3 PAK)
Dim.
A
A1
A2
b
b2
C
D
E
E1
e
H
L
L1
L2
L3
L4
© 2000 IXYS All rights reserved
Millimeter
Min. Max.
4.9
5.1
2.7
2.9
.02
.25
1.15
1.45
1.9
2.1
.4
.65
13.80 14.00
15.85 16.05
13.3
13.6
5.45 BSC
18.70 19.10
2.40
2.70
1.20
1.40
1.00
1.15
0.25 BSC
3.80
4.10
Inches
Min. Max.
.193 .201
.106 .114
.001 .010
.045 .057
.75
.83
.016 .026
.543 .551
.624 .632
.524 .535
.215 BSC
.736 .752
.094 .106
.047 .055
.039 .045
.010 BSC
.150 .161
Dim.
A
A1
A2
b
b1
b2
c
D
E
e
J
K
L
L1
P
Q
Q1
R
R1
S
T
Millimeter
Min.
Max.
4.82
2.54
2.00
1.12
2.39
2.90
0.53
25.91
19.81
5.46
0.00
0.00
20.32
2.29
3.17
6.07
8.38
3.81
1.78
6.04
1.57
5.13
2.89
2.10
1.42
2.69
3.09
0.83
26.16
19.96
BSC
0.25
0.25
20.83
2.59
3.66
6.27
8.69
4.32
2.29
6.30
1.83
Inches
Min.
Max.
.190
.202
.100
.114
.079
.083
.044
.056
.094
.106
.114
.122
.021
.033
1.020
1.030
.780
.786
.215 BSC
.000
.010
.000
.010
.800
.820
.090
.102
.125
.144
.239
.247
.330
.342
.150
.170
.070
.090
.238
.248
.062
.072
Min. Recommended Footprint
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592
4,881,106
5,017,508
5,049,961
5,187,117
5,486,715
4,850,072
4,931,844
5,034,796
5,063,307
5,237,481
5,381,025
2-2