IXYS IXGH12N100

Low VCE(sat) IGBT with Diode
High Speed IGBT with Diode
Combi Pack
Symbol
Test Conditions
VCES
IXGH 12N100U1
IXGH 12N100AU1
Maximum Ratings
VCES
TJ = 25°C to 150°C
1000
V
TJ = 25°C to 150°C; RGE = 1 MW
1000
V
VGES
Continuous
±20
V
VGEM
Transient
±30
V
IC25
TC = 25°C
24
A
IC90
TC = 90°C
12
A
ICM
TC = 25°C, 1 ms
48
A
ICM = 24
A
VGE = 15 V, TVJ = 125°C, RG = 150 W
(RBSOA)
Clamped inductive load, L = 300 mH
PC
TC = 25°C
G
W
-55 ... +150
°C
TJM
150
°C
Tstg
-55 ... +150
°C
TJ
Mounting torque with screw M3
1.13/10 Nm/lb.in.
Weight
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
Symbol
Test Conditions
(TJ = 25°C, unless otherwise specified)
Min.
BVCES
1000
IC = 3 mA, VGE = 0 V
BVCES temperature coefficient
VGE(th)
6
g
300
°C
Characteristic Values
Typ.
Max.
V
0.072
IC = 500 mA, VGE = VGE
2.5
VGE(th) temperature coefficient
ICES
%/K
5.5
-0.192
V
%/K
VCE = 0.8, VCES
TJ = 25°C
300
mA
VGE = 0 V
TJ = 125°C
5
mA
±100
nA
3.5
4.0
V
V
IGES
VCE = 0 V, VGE = ±20 V
VCE(sat)
IC = ICE90, VGE = 15
12N100U1
12N100AU1
IXYS reserves the right to change limits, test conditions, and dimensions.
© 2000 IXYS All rights reserved
C (TAB)
C
G = Gate
E = Emitter
E
C
= Collector
TAB = Collector
@ 0.8 VCES
100
Md
1000 V 24 A 3.5 V
1000 V 24 A 4.0 V
TO-247AD
VCGR
SSOA
IC25 VCE(sat)
Features
• International standard packages
JEDEC TO-247
• IGBT with antiparallel FRED in one
package
• HDMOSTM process
• Low VCE(sat)
- for minimum on-state conduction
losses
• MOS Gate turn-on
- drive simplicity
• Fast Recovery Expitaxial Diode (FRED)
- soft recovery with low IRM
Applications
• DC choppers
• AC motor speed control
• DC servo and robot drives
• Uninterruptible power supplies (UPS)
• Switch-mode and resonant-mode
power supplies
Advantages
• Easy to mount with one screw
• Reduces assembly time and cost
• Space savings (two devices in one
package)
95596C (7/00)
1-5
IXGH12N100U1
Symbol
Test Conditions
(TJ = 25°C, unless otherwise specified)
gfs
Characteristic Values
Min. Typ.
Max.
IC = IC90; VCE = 10 V,
6
10
S
750
pF
IXGH12N100AU1
TO-247 AD (IXGH) Outline
Pulse test, t £ 300 ms, duty cycle £ 2 %
Cies
120
pF
Cres
C oes
30
pF
Qg
65
Qge
VCE = 25 V, VGE = 0 V, f = 1MHz
IC = IC90, VGE = 15 V, VCE = 0.5 VCES
Qgc
td(on)
t ri
td(off)
tfi
Eoff
IC
= IC90, VGE = 15 V, L = 300 mH
VCE = 800 V, RG = Roff = 120 W
Remarks: Switching times may
increase for VCE (Clamp) > 0.8 VCES,
higher TJ or increased RG
E(on)
td(off)
tfi
Eoff
8
20
nC
45
nC
200
ns
850 1000
ns
800 1000
ns
12N100AU1
500
ns
12N100U1
2.5
12N100AU1
1.5
700
3.0
Dim. Millimeter
Min. Max.
Inches
Min. Max.
A
B
19.81 20.32
20.80 21.46
0.780 0.800
0.819 0.845
mJ
C
D
15.75 16.26
3.55 3.65
0.610 0.640
0.140 0.144
mJ
E
F
4.32 5.49
5.4
6.2
0.170 0.216
0.212 0.244
G
H
1.65 2.13
4.5
0.065 0.084
0.177
J
K
1.0
1.4
10.8 11.0
0.040 0.055
0.426 0.433
100
ns
200
ns
1.1
mJ
900
ns
1250
ns
L
M
4.7
0.4
5.3
0.8
0.185 0.209
0.016 0.031
12N100AU1
950
ns
N
1.5 2.49
0.087 0.102
12N100U1
12N100AU1
3.5
2.2
mJ
mJ
= IC90, VGE = 15 V, L = 300 mH
VCE = 800 V, RG = Roff = 120 W
Remarks: Switching times may
increase for VCE (Clamp) > 0.8 VCES,
higher TJ or increased RG
ns
12N100U1
Inductive load, TJ = 125°C
IC
nC
24
100
Inductive load, TJ = 25°C
td(on)
t ri
90
12N100U1
RthJC
1.25 K/W
0.25
RthCK
Reverse Diode (FRED)
(T J = 25°C, unless otherwise specified)
Symbol Test Conditions
Characteristic Values
Min.
VF
IF =8A, VGE = 0 V,
Pulse test, t £ 300 ms, duty cycle d £ 2 %
IRM
t rr
IF = IC90, VGE = 0 V, -diF/dt = 100 A/ms
VR = 540 V
IF = 1 A, -di/dt = 50 A/ms, VR = 30 V
RthJC
© 2000 IXYS All rights reserved
K/W
TJ = 125°C
TJ = 25°C
Typ.
6.5
120
50
Max.
2.75
V
60
A
ns
ns
2.5 K/W
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592
4,881,106
5,017,508
5,049,961
5,187,117
5,486,715
4,850,072
4,931,844
5,034,796
5,063,307
5,237,481
5,381,025
2-5
IXGH12N100U1
100
50
40
VGE = 15V
13V
11V
TJ = 25°C
VGE = 15V
80
IC - Amperes
TJ = 25°C
IC - Amperes
IXGH12N100AU1
9V
30
20
13V
60
11V
40
9V
7V
20
10
7V
0
0
0
2
4
6
8
0
10
4
8
16
20
VCE - Volts
VCE - Volts
Figure 1. Saturation Voltage Characteristics
Figure 2. Extended Output Characteristics
1.6
50
40
VGE = 15V
13V
11V
VGE = 15V
VCE (sat) - Normalized
TJ = 125°C
IC - Amperes
12
30
9V
20
7V
10
IC = 24A
1.4
1.2
IC = 12A
1.0
0.8
IC = 6A
0.6
25
0
0
2
4
6
8
10
50
75
VCE - Volts
100
125
150
TJ - Degrees C
Figure 4. Temperature Dependence of VCE(sat)
Figure 3. Saturation Voltage Characteristics
1000
50
VCE = 10V
Capacitance - pF
TJ = 25°C
IC - Amperes
f = 1Mhz
Ciss
40
30
TJ = 125°C
20
Coss
100
Crss
10
10
0
2
4
6
8
10
VGE - Volts
Figure 5. Admittance Curves
© 2000 IXYS All rights reserved
12
0
5
10
15
20
25
30
35
40
VCE-Volts
Figure 6. Capacitance Curves
3-5
IXGH12N100U1
1200
5
IXGH12N100AU1
1000
5
TJ = 125°C
t fi
1000
3
E(OFF)
900
2
t fi - nanoseconds
4
tfi
800
4
600
3
400
2
E(OFF)
200
800
0
5
10
1
20
15
1
0
0
30
60
IC - Amperes
120
0
150
Figure 8. Dependence of tfi and EOFF on RG.
100
IC = 30A
VCE = 150V
24
IC - Amperes
12
VGE - Volts
90
RG - Ohms
Figure 7. Dependence of tfi and EOFF on IC.
15
E(OFF) - millijoules
1100
E(OFF) - milliJoules
t fi - nanoseconds
RG = 120
TJ = 125°C
IC = 12A
9
6
TJ = 125°C
RG = 4.7
10
dV/dt < 5V/ns
1
3
0.1
0
0
15
30
45
60
75
0
200
400
600
800
1000
VCE - Volts
Qg - nanocoulombs
Figure 10. Turn-off Safe Operating Area
Figure 9. Gate Charge
1
D=0.5
D=0.2
ZthJC (K/W)
D=0.1
0.1
D=0.05
D=0.02
D=0.01
D = Duty Cycle
0.01
Single pulse
0.001
0.00001
0.0001
0.001
0.01
0.1
1
Pulse Width - Seconds
Figure 11. Transient Thermal Resistance
© 2000 IXYS All rights reserved
4-5
IXGH12N100U1
IXGH12N100AU1
Fig. 12. Forward current versus
voltage drop.
Fig. 13. Recovery charge versus -diF/dt.
Fig. 14. Peak reverse current versus
-diF/dt.
Fig. 15. Dynamic parameters versus
junction temperature.
Fig. 16. Reverse recovery time .
versus -diF/dt
Fig. 17. Forward voltage recovery and
time versus -diF/dt.
Fig. 18. Transient thermal impedance junction to case.
© 2000 IXYS All rights reserved
5-5