Low VCE(sat) IGBT with Diode High Speed IGBT with Diode Combi Pack Symbol Test Conditions VCES IXGH 12N100U1 IXGH 12N100AU1 Maximum Ratings VCES TJ = 25°C to 150°C 1000 V TJ = 25°C to 150°C; RGE = 1 MW 1000 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C 24 A IC90 TC = 90°C 12 A ICM TC = 25°C, 1 ms 48 A ICM = 24 A VGE = 15 V, TVJ = 125°C, RG = 150 W (RBSOA) Clamped inductive load, L = 300 mH PC TC = 25°C G W -55 ... +150 °C TJM 150 °C Tstg -55 ... +150 °C TJ Mounting torque with screw M3 1.13/10 Nm/lb.in. Weight Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Symbol Test Conditions (TJ = 25°C, unless otherwise specified) Min. BVCES 1000 IC = 3 mA, VGE = 0 V BVCES temperature coefficient VGE(th) 6 g 300 °C Characteristic Values Typ. Max. V 0.072 IC = 500 mA, VGE = VGE 2.5 VGE(th) temperature coefficient ICES %/K 5.5 -0.192 V %/K VCE = 0.8, VCES TJ = 25°C 300 mA VGE = 0 V TJ = 125°C 5 mA ±100 nA 3.5 4.0 V V IGES VCE = 0 V, VGE = ±20 V VCE(sat) IC = ICE90, VGE = 15 12N100U1 12N100AU1 IXYS reserves the right to change limits, test conditions, and dimensions. © 2000 IXYS All rights reserved C (TAB) C G = Gate E = Emitter E C = Collector TAB = Collector @ 0.8 VCES 100 Md 1000 V 24 A 3.5 V 1000 V 24 A 4.0 V TO-247AD VCGR SSOA IC25 VCE(sat) Features • International standard packages JEDEC TO-247 • IGBT with antiparallel FRED in one package • HDMOSTM process • Low VCE(sat) - for minimum on-state conduction losses • MOS Gate turn-on - drive simplicity • Fast Recovery Expitaxial Diode (FRED) - soft recovery with low IRM Applications • DC choppers • AC motor speed control • DC servo and robot drives • Uninterruptible power supplies (UPS) • Switch-mode and resonant-mode power supplies Advantages • Easy to mount with one screw • Reduces assembly time and cost • Space savings (two devices in one package) 95596C (7/00) 1-5 IXGH12N100U1 Symbol Test Conditions (TJ = 25°C, unless otherwise specified) gfs Characteristic Values Min. Typ. Max. IC = IC90; VCE = 10 V, 6 10 S 750 pF IXGH12N100AU1 TO-247 AD (IXGH) Outline Pulse test, t £ 300 ms, duty cycle £ 2 % Cies 120 pF Cres C oes 30 pF Qg 65 Qge VCE = 25 V, VGE = 0 V, f = 1MHz IC = IC90, VGE = 15 V, VCE = 0.5 VCES Qgc td(on) t ri td(off) tfi Eoff IC = IC90, VGE = 15 V, L = 300 mH VCE = 800 V, RG = Roff = 120 W Remarks: Switching times may increase for VCE (Clamp) > 0.8 VCES, higher TJ or increased RG E(on) td(off) tfi Eoff 8 20 nC 45 nC 200 ns 850 1000 ns 800 1000 ns 12N100AU1 500 ns 12N100U1 2.5 12N100AU1 1.5 700 3.0 Dim. Millimeter Min. Max. Inches Min. Max. A B 19.81 20.32 20.80 21.46 0.780 0.800 0.819 0.845 mJ C D 15.75 16.26 3.55 3.65 0.610 0.640 0.140 0.144 mJ E F 4.32 5.49 5.4 6.2 0.170 0.216 0.212 0.244 G H 1.65 2.13 4.5 0.065 0.084 0.177 J K 1.0 1.4 10.8 11.0 0.040 0.055 0.426 0.433 100 ns 200 ns 1.1 mJ 900 ns 1250 ns L M 4.7 0.4 5.3 0.8 0.185 0.209 0.016 0.031 12N100AU1 950 ns N 1.5 2.49 0.087 0.102 12N100U1 12N100AU1 3.5 2.2 mJ mJ = IC90, VGE = 15 V, L = 300 mH VCE = 800 V, RG = Roff = 120 W Remarks: Switching times may increase for VCE (Clamp) > 0.8 VCES, higher TJ or increased RG ns 12N100U1 Inductive load, TJ = 125°C IC nC 24 100 Inductive load, TJ = 25°C td(on) t ri 90 12N100U1 RthJC 1.25 K/W 0.25 RthCK Reverse Diode (FRED) (T J = 25°C, unless otherwise specified) Symbol Test Conditions Characteristic Values Min. VF IF =8A, VGE = 0 V, Pulse test, t £ 300 ms, duty cycle d £ 2 % IRM t rr IF = IC90, VGE = 0 V, -diF/dt = 100 A/ms VR = 540 V IF = 1 A, -di/dt = 50 A/ms, VR = 30 V RthJC © 2000 IXYS All rights reserved K/W TJ = 125°C TJ = 25°C Typ. 6.5 120 50 Max. 2.75 V 60 A ns ns 2.5 K/W IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 2-5 IXGH12N100U1 100 50 40 VGE = 15V 13V 11V TJ = 25°C VGE = 15V 80 IC - Amperes TJ = 25°C IC - Amperes IXGH12N100AU1 9V 30 20 13V 60 11V 40 9V 7V 20 10 7V 0 0 0 2 4 6 8 0 10 4 8 16 20 VCE - Volts VCE - Volts Figure 1. Saturation Voltage Characteristics Figure 2. Extended Output Characteristics 1.6 50 40 VGE = 15V 13V 11V VGE = 15V VCE (sat) - Normalized TJ = 125°C IC - Amperes 12 30 9V 20 7V 10 IC = 24A 1.4 1.2 IC = 12A 1.0 0.8 IC = 6A 0.6 25 0 0 2 4 6 8 10 50 75 VCE - Volts 100 125 150 TJ - Degrees C Figure 4. Temperature Dependence of VCE(sat) Figure 3. Saturation Voltage Characteristics 1000 50 VCE = 10V Capacitance - pF TJ = 25°C IC - Amperes f = 1Mhz Ciss 40 30 TJ = 125°C 20 Coss 100 Crss 10 10 0 2 4 6 8 10 VGE - Volts Figure 5. Admittance Curves © 2000 IXYS All rights reserved 12 0 5 10 15 20 25 30 35 40 VCE-Volts Figure 6. Capacitance Curves 3-5 IXGH12N100U1 1200 5 IXGH12N100AU1 1000 5 TJ = 125°C t fi 1000 3 E(OFF) 900 2 t fi - nanoseconds 4 tfi 800 4 600 3 400 2 E(OFF) 200 800 0 5 10 1 20 15 1 0 0 30 60 IC - Amperes 120 0 150 Figure 8. Dependence of tfi and EOFF on RG. 100 IC = 30A VCE = 150V 24 IC - Amperes 12 VGE - Volts 90 RG - Ohms Figure 7. Dependence of tfi and EOFF on IC. 15 E(OFF) - millijoules 1100 E(OFF) - milliJoules t fi - nanoseconds RG = 120 TJ = 125°C IC = 12A 9 6 TJ = 125°C RG = 4.7 10 dV/dt < 5V/ns 1 3 0.1 0 0 15 30 45 60 75 0 200 400 600 800 1000 VCE - Volts Qg - nanocoulombs Figure 10. Turn-off Safe Operating Area Figure 9. Gate Charge 1 D=0.5 D=0.2 ZthJC (K/W) D=0.1 0.1 D=0.05 D=0.02 D=0.01 D = Duty Cycle 0.01 Single pulse 0.001 0.00001 0.0001 0.001 0.01 0.1 1 Pulse Width - Seconds Figure 11. Transient Thermal Resistance © 2000 IXYS All rights reserved 4-5 IXGH12N100U1 IXGH12N100AU1 Fig. 12. Forward current versus voltage drop. Fig. 13. Recovery charge versus -diF/dt. Fig. 14. Peak reverse current versus -diF/dt. Fig. 15. Dynamic parameters versus junction temperature. Fig. 16. Reverse recovery time . versus -diF/dt Fig. 17. Forward voltage recovery and time versus -diF/dt. Fig. 18. Transient thermal impedance junction to case. © 2000 IXYS All rights reserved 5-5