IXYS IXGR50N60B

HiPerFASTTM IGBT
ISOPLUS247TM
VCES
IXGR 50N60B
IXGR 50N60BD1 IC25
VCE(sat)
(Electrically Isolated Back Surface)
tfi(typ)
= 600 V
= 75 A
= 2.5 V
= 85 ns
(D1)
Symbol
Test Conditions
Maximum Ratings
VCES
TJ = 25°C to 150°C
600
V
VCGR
TJ = 25°C to 150°C; RGE = 1 MΩ
600
V
VGES
Continuous
±20
V
VGEM
Transient
±30
V
IC25
TC = 25°C
75
A
IC110
TC = 110°C
45
A
ICM
TC = 25°C, 1 ms
200
A
SSOA
(RBSOA)
VGE = 15 V, TVJ = 125°C, RG = 10 Ω
Clamped inductive load, L = 100 µH
ICM = 100
@ 0.8 VCES
A
PC
TC = 25°C
250
W
-55 ... +150
°C
TJM
150
°C
Tstg
-55 ... +150
°C
TJ
ISOPLUS 247
E153432
G
G = Gate,
E = Emitter
300
°C
VISOL
2500
V
5
g
Symbol
Test Conditions
= 250 µA, VCE = VGE
= 500 µA
VGE(th)
IC
IC
ICES
VCE = 600V
VGE = 0 V
IGES
VCE(sat)
z
z
z
2.5
2.5
z
= IT, VGE = 15 V
© 2004 IXYS All rights reserved
50N60B
50N60BD1
50N60B
TJ = 125°C
50N60BD1
DCB Isolated mounting tab
Meets TO-247AD package Outline
High current handling capability
Latest generation HDMOSTM process
MOS Gate turn-on
- drive simplicity
Applications
z
z
Uninterruptible power supplies (UPS)
Switched-mode and resonant-mode
power supplies
AC motor speed control
DC servo and robot drives
DC choppers
5.0
5.0
V
V
200
650
1
5
µA
µA
mA
mA
Advantages
±100
nA
z
z
z
VCE = 0 V, VGE = ±20 V
IC
Characteristic Values
(TJ = 25°C, unless otherwise specified)
Min. Typ. Max.
50N60B
50N60BD1
2.5
C = Collector
Features
z
Weight
Isolated Backside*
E
* Patent pending
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
50/60 Hz, RMS, t = 1minute leads-to-tab
C
V
z
z
z
Easy assembly
High power density
Very fast switching speeds for high
frequency applications
DS98730C(06/04)
IXGR 50N60B
IXGR 50N60BD1
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
gfs
IC = IT; VCE = 10 V,
Pulse test, t ≤ 300 µs, duty cycle ≤ 2 %
25
Cies
Coes
VCE = 25 V, VGE = 0 V, f = 1 MHz
Cres
Qg
IC = IT, VGE = 15 V, VCE = 0.5 VCES
Qge
Qgc
td(on)
Inductive load, TJ = 25°°C
tri
IC = IT, VGE = 15 V, L = 100uH
VCE = 0.8 • VCES, RG = Roff = 2.7 Ω
td(off)
35
S
4100
300
pF
pF
pF
50
pF
110
nC
30
nC
35
nC
50
ns
50
270
ns
85
150
ns
Eoff
3.0
4.0
mJ
td(on)
Inductive load, TJ = 125°°C
50
ns
tri
IC = IT, VGE = 15 V, L = 100uH
60
ns
Eon
VCE = 0.8 • VCES, RG = Roff = 2.7 Ω
td(off)
Remarks: Switching times may
increase for VCE (Clamp) > 0.8 • VCES,
higher TJ or increased RG
tfi
Eoff
3
mJ
200
ns
250
ns
4.2
mJ
RthJC
0.5
RthCK
0.15
Reverse Diode (FRED)
Symbol
Test Conditions
Dim.
A
A1
A2
b
b1
b2
C
D
E
e
L
L1
Q
R
Millimeter
Min.
Max.
4.83
5.21
2.29
2.54
1.91
2.16
1.14
1.40
1.91
2.13
2.92
3.12
0.61
0.80
20.80 21.34
15.75 16.13
5.45 BSC
19.81 20.32
3.81
4.32
5.59
6.20
4.32
4.83
K/W
K/W
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
VF
IF = IT, VGE = 0 V,
TJ = 150°C
Pulse test, t ≤ 300 ms, duty cycle ≤ 2 %
IRM
IF = IT, VGE = 0 V, -diF/dt = 100 A/ms,TJ = 100°C
V R = 100 V
IF = 1 A; -di/dt = 200 A/ms; VR = 30 V
t rr
1 Gate, 2 Drain (Collector)
3 Source (Emitter)
4 no connection
ns
110
Remarks: Switching times may
increase for VCE (Clamp) > 0.8 • VCES,
higher TJ or increased RG
tfi
ISOPLUS 247 OUTLINE
1.6
2.5
3.2
V
V
A
ns
ns
35
0.85 K/W
RthJC
Note: IT,= 50A
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by
one or moreof the following U.S. patents:
4,835,592
4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344
6,710,405B2
6,710,463
6,727,585
Inches
Min. Max.
.190 .205
.090 .100
.075 .085
.045 .055
.075 .084
.115 .123
.024 .031
.819 .840
.620 .635
.215 BSC
.780 .800
.150 .170
.220 .244
.170 .190
IXGR 50N60B
IXGR 50N60BD1
100
80
7V
60
40
20
0
2
3
4
120
7V
80
5V
0
5
0
2
4
6
8
Fig. 1. Saturation Voltage Characteristics
Fig. 2. Extended Output Characteristics
1.6
T J = 125°C V = 15V
GE
13V
11V
V GE = 15V
VCE (sat) - Normalized
9V
7V
60
40
5V
20
0
1
2
3
4
1.2
IC = 50A
1.0
IC = 25A
0.8
0.6
0.4
25
5
IC = 100A
1.4
50
75
VCE - Volts
100
125
Fig. 4. Temperature Dependence of VCE(sat)
10000
100
f = 1Mhz
VCE = 10V
Ciss
Capacitance - pF
80
IC - Amperes
150
TJ - Degrees C
Fig. 3. Saturation Voltage Characteristics
60
40
TJ = 25°C
T J = 125°C
1000
Coss
100
Crss
20
0
10
VCE - Volts
80
0
9V
VCE - Volts
100
IC - Amperes
1
11V
V GE = 15V
13V
40
5V
0
T J = 25°C
160
IC - Amperes
IC - Amperes
200
VGE = 15V
13V
11V
9V
T J = 25°C
10
0
2
4
6
8
10
VGE - Volts
Fig. 5. Saturation Voltage Characteristics
© 2004 IXYS All rights reserved
0
5
10
15
20
25
30
35
VCE-Volts
Fig. 6. Junction Capacitance Curves
40
IXGR 50N60B
IXGR 50N60BD1
6
12
6
10
5
TJ = 125°C
4
8
E(OFF)
3
6
2
4
1
2
TJ = 125°C
10
E(ON)
IC = 100A
4
E(OFF)
8
3
6
IC = 50A
E(ON)
2
E(OFF)
1
4
E(OFF)
IC =25A
2
E(ON)
0
0
20
40
60
80
0
0
100
0
10
50
0
60
600
IC =50A
VCE = 250V
100
IC - Amperes
15
VGE - Volts
40
Fig. 8. Dependence of tfi and EOFF on RG.
Fig. 7. Dependence of EON and EOFF on IC.
10
TJ = 125°C
10
RG = 5.2 Ω
dV/dt < 5V/ns
1
5
0
30
RG - Ohms
IC - Amperes
20
20
0.1
0
50
100
150
200
250
300
0
100
200
300
400
500
VCE - Volts
Qg - nanocoulombs
Fig. 10. Turn-off Safe Operating Area
Fig. 9. Gate Charge
ZthJC (K/W)
1
0.1
0.01
0.001
0.00001
0.0001
0.001
0.01
Pulse Width - Seconds
Figure 11. IGBT Transient Thermal Resistance
0.1
1
E(OFF) - millijoules
E(ON)
E(ON) - millijoules
RG = 4.7Ω
E(OFF) - milliJoules
E(ON) - millijoules
5
12
IXGR 50N60B
IXGR 50N60BD1
4000
160
A
140
IF
nC
120
3000
TVJ= 25°C
100
Qr
2000
TVJ= 100°C
VR = 300V
A
60
IF=120A
IF= 60A
IF= 30A
TVJ=100°C
80
80
TVJ= 100°C
VR = 300V
IRM
IF=120A
IF= 60A
IF= 30A
40
TVJ=150°C
60
1000
40
20
20
0
0
1
2
0
100
V
A/µs 1000
-diF/dt
VF
Fig. 12 Forward current IF versus VF
Fig. 13 Reverse recovery charge Qr
versus -diF/dt
2.0
140
TVJ= 100°C
VR = 300V
ns
130
trr
1.5
Kf
120
1.0
110
0
200
400
600 A/µs
800 1000
-diF/dt
Fig. 14 Peak reverse current IRM
versus -diF/dt
20
1.6
V
VFR
15
µs
1.2
V FR
tfr
IF=120A
IF= 60A
IF= 30A
IRM
0
10
0.8
5
0.4
tfr
100
0.5
0.0
Qr
0
40
90
80
120 °C 160
80
0
200
TVJ
400
600
800 1000
A/µs
0
200
400
-diF/dt
Fig. 15 Dynamic parameters Qr, IRM
versus TVJ
Fig. 16 Recovery time trr versus -diF/dt
1
0.0
600 A/µs
800 1000
diF/dt
Fig. 17 Peak forward voltage VFR and
tfr versus diF/dt
Constants for ZthJC calculation:
K/W
i
0.1
1
2
3
4
ZthJC
0.01
0.001
0.0001
0.00001
0
TVJ= 100°C
IF = 60A
DSEP 2x61-06A
0.0001
0.001
0.01
Fig. 18 Transient thermal resistance junction to case
© 2004 IXYS All rights reserved
0.1
s
t
1
Rthi (K/W)
ti (s)
0.3073
0.3533
0.0887
0.1008
0.0055
0.0092
0.0007
0.0399