HiPerFASTTM IGBT ISOPLUS247TM VCES IXGR 50N60B IXGR 50N60BD1 IC25 VCE(sat) (Electrically Isolated Back Surface) tfi(typ) = 600 V = 75 A = 2.5 V = 85 ns (D1) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C 75 A IC110 TC = 110°C 45 A ICM TC = 25°C, 1 ms 200 A SSOA (RBSOA) VGE = 15 V, TVJ = 125°C, RG = 10 Ω Clamped inductive load, L = 100 µH ICM = 100 @ 0.8 VCES A PC TC = 25°C 250 W -55 ... +150 °C TJM 150 °C Tstg -55 ... +150 °C TJ ISOPLUS 247 E153432 G G = Gate, E = Emitter 300 °C VISOL 2500 V 5 g Symbol Test Conditions = 250 µA, VCE = VGE = 500 µA VGE(th) IC IC ICES VCE = 600V VGE = 0 V IGES VCE(sat) z z z 2.5 2.5 z = IT, VGE = 15 V © 2004 IXYS All rights reserved 50N60B 50N60BD1 50N60B TJ = 125°C 50N60BD1 DCB Isolated mounting tab Meets TO-247AD package Outline High current handling capability Latest generation HDMOSTM process MOS Gate turn-on - drive simplicity Applications z z Uninterruptible power supplies (UPS) Switched-mode and resonant-mode power supplies AC motor speed control DC servo and robot drives DC choppers 5.0 5.0 V V 200 650 1 5 µA µA mA mA Advantages ±100 nA z z z VCE = 0 V, VGE = ±20 V IC Characteristic Values (TJ = 25°C, unless otherwise specified) Min. Typ. Max. 50N60B 50N60BD1 2.5 C = Collector Features z Weight Isolated Backside* E * Patent pending Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s 50/60 Hz, RMS, t = 1minute leads-to-tab C V z z z Easy assembly High power density Very fast switching speeds for high frequency applications DS98730C(06/04) IXGR 50N60B IXGR 50N60BD1 Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. gfs IC = IT; VCE = 10 V, Pulse test, t ≤ 300 µs, duty cycle ≤ 2 % 25 Cies Coes VCE = 25 V, VGE = 0 V, f = 1 MHz Cres Qg IC = IT, VGE = 15 V, VCE = 0.5 VCES Qge Qgc td(on) Inductive load, TJ = 25°°C tri IC = IT, VGE = 15 V, L = 100uH VCE = 0.8 • VCES, RG = Roff = 2.7 Ω td(off) 35 S 4100 300 pF pF pF 50 pF 110 nC 30 nC 35 nC 50 ns 50 270 ns 85 150 ns Eoff 3.0 4.0 mJ td(on) Inductive load, TJ = 125°°C 50 ns tri IC = IT, VGE = 15 V, L = 100uH 60 ns Eon VCE = 0.8 • VCES, RG = Roff = 2.7 Ω td(off) Remarks: Switching times may increase for VCE (Clamp) > 0.8 • VCES, higher TJ or increased RG tfi Eoff 3 mJ 200 ns 250 ns 4.2 mJ RthJC 0.5 RthCK 0.15 Reverse Diode (FRED) Symbol Test Conditions Dim. A A1 A2 b b1 b2 C D E e L L1 Q R Millimeter Min. Max. 4.83 5.21 2.29 2.54 1.91 2.16 1.14 1.40 1.91 2.13 2.92 3.12 0.61 0.80 20.80 21.34 15.75 16.13 5.45 BSC 19.81 20.32 3.81 4.32 5.59 6.20 4.32 4.83 K/W K/W Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. VF IF = IT, VGE = 0 V, TJ = 150°C Pulse test, t ≤ 300 ms, duty cycle ≤ 2 % IRM IF = IT, VGE = 0 V, -diF/dt = 100 A/ms,TJ = 100°C V R = 100 V IF = 1 A; -di/dt = 200 A/ms; VR = 30 V t rr 1 Gate, 2 Drain (Collector) 3 Source (Emitter) 4 no connection ns 110 Remarks: Switching times may increase for VCE (Clamp) > 0.8 • VCES, higher TJ or increased RG tfi ISOPLUS 247 OUTLINE 1.6 2.5 3.2 V V A ns ns 35 0.85 K/W RthJC Note: IT,= 50A IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or moreof the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,710,405B2 6,710,463 6,727,585 Inches Min. Max. .190 .205 .090 .100 .075 .085 .045 .055 .075 .084 .115 .123 .024 .031 .819 .840 .620 .635 .215 BSC .780 .800 .150 .170 .220 .244 .170 .190 IXGR 50N60B IXGR 50N60BD1 100 80 7V 60 40 20 0 2 3 4 120 7V 80 5V 0 5 0 2 4 6 8 Fig. 1. Saturation Voltage Characteristics Fig. 2. Extended Output Characteristics 1.6 T J = 125°C V = 15V GE 13V 11V V GE = 15V VCE (sat) - Normalized 9V 7V 60 40 5V 20 0 1 2 3 4 1.2 IC = 50A 1.0 IC = 25A 0.8 0.6 0.4 25 5 IC = 100A 1.4 50 75 VCE - Volts 100 125 Fig. 4. Temperature Dependence of VCE(sat) 10000 100 f = 1Mhz VCE = 10V Ciss Capacitance - pF 80 IC - Amperes 150 TJ - Degrees C Fig. 3. Saturation Voltage Characteristics 60 40 TJ = 25°C T J = 125°C 1000 Coss 100 Crss 20 0 10 VCE - Volts 80 0 9V VCE - Volts 100 IC - Amperes 1 11V V GE = 15V 13V 40 5V 0 T J = 25°C 160 IC - Amperes IC - Amperes 200 VGE = 15V 13V 11V 9V T J = 25°C 10 0 2 4 6 8 10 VGE - Volts Fig. 5. Saturation Voltage Characteristics © 2004 IXYS All rights reserved 0 5 10 15 20 25 30 35 VCE-Volts Fig. 6. Junction Capacitance Curves 40 IXGR 50N60B IXGR 50N60BD1 6 12 6 10 5 TJ = 125°C 4 8 E(OFF) 3 6 2 4 1 2 TJ = 125°C 10 E(ON) IC = 100A 4 E(OFF) 8 3 6 IC = 50A E(ON) 2 E(OFF) 1 4 E(OFF) IC =25A 2 E(ON) 0 0 20 40 60 80 0 0 100 0 10 50 0 60 600 IC =50A VCE = 250V 100 IC - Amperes 15 VGE - Volts 40 Fig. 8. Dependence of tfi and EOFF on RG. Fig. 7. Dependence of EON and EOFF on IC. 10 TJ = 125°C 10 RG = 5.2 Ω dV/dt < 5V/ns 1 5 0 30 RG - Ohms IC - Amperes 20 20 0.1 0 50 100 150 200 250 300 0 100 200 300 400 500 VCE - Volts Qg - nanocoulombs Fig. 10. Turn-off Safe Operating Area Fig. 9. Gate Charge ZthJC (K/W) 1 0.1 0.01 0.001 0.00001 0.0001 0.001 0.01 Pulse Width - Seconds Figure 11. IGBT Transient Thermal Resistance 0.1 1 E(OFF) - millijoules E(ON) E(ON) - millijoules RG = 4.7Ω E(OFF) - milliJoules E(ON) - millijoules 5 12 IXGR 50N60B IXGR 50N60BD1 4000 160 A 140 IF nC 120 3000 TVJ= 25°C 100 Qr 2000 TVJ= 100°C VR = 300V A 60 IF=120A IF= 60A IF= 30A TVJ=100°C 80 80 TVJ= 100°C VR = 300V IRM IF=120A IF= 60A IF= 30A 40 TVJ=150°C 60 1000 40 20 20 0 0 1 2 0 100 V A/µs 1000 -diF/dt VF Fig. 12 Forward current IF versus VF Fig. 13 Reverse recovery charge Qr versus -diF/dt 2.0 140 TVJ= 100°C VR = 300V ns 130 trr 1.5 Kf 120 1.0 110 0 200 400 600 A/µs 800 1000 -diF/dt Fig. 14 Peak reverse current IRM versus -diF/dt 20 1.6 V VFR 15 µs 1.2 V FR tfr IF=120A IF= 60A IF= 30A IRM 0 10 0.8 5 0.4 tfr 100 0.5 0.0 Qr 0 40 90 80 120 °C 160 80 0 200 TVJ 400 600 800 1000 A/µs 0 200 400 -diF/dt Fig. 15 Dynamic parameters Qr, IRM versus TVJ Fig. 16 Recovery time trr versus -diF/dt 1 0.0 600 A/µs 800 1000 diF/dt Fig. 17 Peak forward voltage VFR and tfr versus diF/dt Constants for ZthJC calculation: K/W i 0.1 1 2 3 4 ZthJC 0.01 0.001 0.0001 0.00001 0 TVJ= 100°C IF = 60A DSEP 2x61-06A 0.0001 0.001 0.01 Fig. 18 Transient thermal resistance junction to case © 2004 IXYS All rights reserved 0.1 s t 1 Rthi (K/W) ti (s) 0.3073 0.3533 0.0887 0.1008 0.0055 0.0092 0.0007 0.0399