HiPerFASTTM IGBT with Diode IXGH 30N60BU1 IXGT 30N60BU1 Combi Pack VCES IC25 VCE(sat) tfi = 600 V = 60 A = 1.8 V = 100 ns TO-268 (IXGT) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C 60 A IC110 TC = 110°C ICM TC = 25°C, 1 ms SSOA (RBSOA) VGE = 15 V, TVJ = 125°C, RG = 33 Ω Clamped inductive load, L = 100 µH PC TC = 25°C 30 A 120 A ICM = 60 @ 0.8 VCES A 200 W -55 ... +150 °C TJM 150 °C Tstg -55 ... +150 °C 300 °C 1.13/10 Nm/lb.in. 4 6 g g TJ Maximum Lead and Tab temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Md Mounting torque, TO-247 AD Weight TO-268 TO-247 AD Symbol Test Conditions BVCES IC = 750µA, VGE = 0 V BVCES temperature coefficient 600 IC = 250 µA, VCE = VGE VGE(th) temperature coefficient 2.5 VGE(th) ICES VCE = 0.8 • VCES VGE = 0 V IGES VCE = 0 V, VGE = ±20 V VCE(sat) VCE(sat) IC IC = IC110, VGE = 15 V = IC110, VGE = 15 V © 2002 IXYS All rights reserved TJ = 150°C E C (TAB) TO-247 AD C (TAB) G G = Gate, E = Emitter, Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. TJ = 25°C TJ = 150°C G V %/K 0.072 5.5 V %/K 500 3 µA mA ±100 nA 1.8 2.0 V V -0.286 C E C = Collector, TAB = Collector Features International standard packages JEDEC TO-247 SMD surface mountable and JEDEC TO-247 AD High frequency IGBT and antiparallel FRED in one package High current handling capability Newest generation HDMOSTM process MOS Gate turn-on - drive simplicity Applications AC motor speed control DC servo and robot drives DC choppers Uninterruptible power supplies (UPS) Switched-mode and resonant-mode power supplies Advantages Space savings (two devices in one package) High power density Optimized VCE(sat) and switching speeds for medium frequency applications 97501E (02/02) IXGH 30N60BU1 IXGT 30N60BU1 Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. gfs IC = IC110; VCE = 10 V, Pulse test, t ≤ 300 µs, duty cycle ≤ 2 % 25 S 2710 pF 240 pF Cres 50 pF Qg 110 150 nC 22 35 nC 40 75 nC Cies Coes Qge VCE = 25 V, VGE = 0 V, f = 1 MHz IC = IC110, VGE = 15 V, VCE = 0.5 VCES Qgc td(on) tri td(off) tfi Eoff td(on) tri Eon td(off) tfi Eoff Inductive load, TJ = 25°°C 25 ns IC = IC110, VGE = 15 V, L = 100 µH, VCE = 0.8 VCES, RG = Roff = 4.7 Ω 30 ns Remarks: Switching times may increase for VCE (Clamp) > 0.8 • VCES, higher TJ or increased RG 220 ns 100 190 ns 1.0 2.0 mJ 25 ns 35 ns 1 mJ 200 ns 230 ns 2.5 mJ 0.25 0.62 K/W K/W Inductive load, TJ = 150°°C IC = IC110, VGE = 15 V, L = 100 µH VCE = 0.8 VCES, RG = Roff = 4.7 Ω Remarks: Switching times may increase for VCE (Clamp) > 0.8 • VCES, higher TJ or increased RG RthJC RthCK Reverse Diode (FRED) ∅P e Dim. Millimeter Min. Max. A 4.7 5.3 A1 2.2 2.54 A2 2.2 2.6 b 1.0 1.4 1.65 2.13 b1 b2 2.87 3.12 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 ∅P 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 S 6.15 BSC Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 242 BSC TO-247 AA (D3 PAK) Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. Symbol Test Conditions VF IF = IC110, VGE = 0 V, Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % IRM IF = IC110, VGE = 0 V, -diF/dt = 240 A/µs VR = 360 V IF = 1 A; -di/dt = 100 A/µs; VR = 30 V t rr 130 TO-247 AD Outline 1.6 V 10 15 A 35 50 ns 1 K/W RthJC Dim. Min Recommended Footprint A A1 A2 b b2 C D E E1 e H L L1 Millimeter Min. Max. 4.9 5.1 2.7 2.9 .02 .25 1.15 1.45 1.9 2.1 .4 .65 13.80 14.00 15.85 16.05 13.3 13.6 5.45 BSC 18.70 19.10 2.40 2.70 1.20 1.40 Inches Min. Max. .193 .201 .106 .114 .001 .010 .045 .057 .75 .83 .016 .026 .543 .551 .624 .632 .524 .535 .215 BSC .736 .752 .094 .106 .047 .055 L2 L3 L4 1.00 1.15 0.25 BSC 3.80 4.10 .039 .045 .010 BSC .150 .161 IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025 6,306,728B1 IXGH 30N60BU1 IXGT 30N60BU1 Fig. 1. Saturation Voltage Characteristics Fig. 2. Extended Output Characteristics 200 100 TJ = 25°C VGE = 15V TJ = 25°C VGE = 15V 13V 11V 9V 7V 60 160 IC - Amperes IC - Amperes 80 11V 13V 40 9V 120 80 7V 40 20 5V 5V 0 0 0 1 2 3 4 0 5 2 4 8 10 VCE - Volts VCE - Volts Fig. 3. Saturation Voltage Characteristics Fig. 4. Temperature Dependence of VCE(sat) 1.6 100 VGE = 15V 13V 11V 9V IC = 60A VGE = 15V VCE (sat) - Normalized TJ = 150°C 80 IC - Amperes 6 60 7V 40 20 1.4 1.2 IC = 30A 1.0 0.8 5V IC = 15A 0.6 25 0 0 1 2 3 4 5 50 75 VCE - Volts 125 150 TJ - Degrees C Fig. 5. Admittance Curves 100 100 Fig. 6. Temperature Dependence of BVDSS & VGE(th) 10000 VCE = 10V f = 1Mhz Capacitance - pF IC - Amperes 80 60 40 TJ = 150°C Ciss 1000 Coss 100 20 Crss TJ = 25°C 0 10 3 4 5 6 7 VGE - Volts © 2002 IXYS All rights reserved 8 9 10 0 5 10 15 20 25 VCE-Volts 30 35 40 IXGH 30N60BU1 IXGT 30N60BU1 Fig. 8. Dependence of EOFF on RG. Fig. 7. Dependence of EOFF and EOFF on IC. 4 10 8 TJ = 150°C TJ = 150°C 8 6 E(OFF) 2 4 E(ON) 1 2 0 0 80 E(ON) - millijoules 3 E(OFF) - milliJoules E(ON) - millijoules RG = 4.7Ω IC = 60A 6 4 IC = 30A 2 IC = 15A 0 20 40 60 0 0 10 Fig. 9. Gate Charge 50 60 Fig. 10. Turn-off Safe Operating Area IC - Amperes VGE - Volts 40 100 60 IC = 30A VCE = 360V 15 30 RG - Ohms IC - Amperes 18 20 12 9 6 TJ = 150°C 10 RG = 4.7Ω dV/dt < 5V/ns 1 3 0 0.1 0 25 50 75 100 125 150 175 0 100 Qg - nanocoulombs 200 300 400 500 600 VCE - Volts Fig. 11. IGBT Transient Thermal Resistance 1 D=0.5 ZthJC (K/W) D=0.2 0.1 D=0.1 D=0.05 D=0.02 0.01 D=0.01 D = Duty Cycle Single pulse 0.001 0.00001 0.0001 0.001 0.01 0.1 1 Pulse Width - Seconds IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025 6,306,728B1 IXGH 30N60BU1 IXGT 30N60BU1 Fig. 12. Forward current versus voltage drop. Fig. 13. Recovery charge versus -diF/dt. Fig. 14. Peak reverse current versus -diF/dt. Fig. 15. Dynamic parameters versus junction temperature. Fig. 16. Reverse recovery time vs -diF/dt. Fig. 17. Forward voltage recovery and time versus -diF/dt. Fig. 18. Transient thermal resistance junction to case. © 2002 IXYS All rights reserved