IGBT with Diode IXSN 52N60AU1 VCES IC25 VCE(sat) Combi Pack Short Circuit SOA Capability = 600 V = 80 A = 3V 3 2 4 Symbol Test Conditions VCES TJ = 25°C to 150°C 1 Maximum Ratings 600 miniBLOC, SOT-227 B 1 V 2 VCGR TJ = 25°C to 150°C; RGE = 1 MW 600 A VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C 80 A IC90 TC = 90°C 40 A 1 = Emitter , 3 = Collector ICM TC = 25°C, 1 ms 160 A 2 = Gate, 4 = Emitter SSOA (RBSOA) VGE = 15 V, TVJ = 125°C, RG = 22 W Clamped inductive load, L = 30 mH ICM = 80 @ 0.8 VCES A Either Emitter terminal can be used as Main or Kelvin Emitter tSC (SCSOA) VGE = 15 V, VCE = 360 V, TJ = 125°C RG = 22 W, non repetitive 10 ms PC TC = 25°C 250 W VISOL 50/60 Hz IISOL £ 1 mA 2500 3000 V~ V~ -55 ... +150 °C TJM 150 °C Tstg -55 ... +150 °C Features • International standard package miniBLOC • Aluminium-nitride isolation - high power dissipation • Isolation voltage 3000 V~ • Low VCE(sat) - for minimum on-state conduction losses • Fast Recovery Epitaxial Diode - short trr and IRM • Low collector-to-case capacitance (< 50 pF) - reducesd RFI • Low package inductance (< 10 nH) - easy to drive and to protect t = 1 min t=1s TJ Md Mounting torque Terminal connection torque (M4) 1.5/13 Nm/lb.in. 1.5/13 Nm/lb.in. Weight Symbol 30 Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. BVCES IC = 3 mA, VGE = 0 V 600 VGE(th) IC = 4 mA, VCE = VGE 4 ICES VCE = 0.8 • VCES VGE = 0 V IGES VCE = 0 V, VGE = ±20 V VCE(sat) IC TJ = 25°C TJ = 125°C = IC90, VGE = 15 V IXYS reserves the right to change limits, test conditions, and dimensions. © 2000 IXYS All rights reserved g V 8 V 750 15 mA mA ±100 nA 3 V 4 3 Applications • AC motor speed control • DC servo and robot drives • DC choppers • Uninterruptible power supplies (UPS) • Switch-mode and resonant-mode power supplies Advantages • Space savings • Easy to mount with 2 screws • High power density 92814H(5/97) 1-5 IXSN52N60AU1 Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. gfs IC = IC90; VCE = 10 V, Pulse test, t £ 300 ms, duty cycle d £ 2 % 20 C ies S 4500 pF 400 pF C res 90 pF Qg 190 250 nC 45 60 nC 88 120 nC Coes Qge VCE = 25 V, VGE = 0 V, f = 1 MHz 23 IC = IC90, VGE = 15 V, VCE = 0.5 VCES Qgc td(on) t ri td(off) Inductive load, TJ = 25°C IC = IC90, VGE = 15 V, L = 100 mH, VCE = 0.8 VCES, RG = 2.7 W 70 ns 220 ns 200 ns 200 ns 3.5 mJ 70 ns miniBLOC, SOT-227 B M4 screws (4x) supplied Dim. Millimeter Min. Max. Inches Min. Max. A B 31.50 7.80 31.88 8.20 1.240 0.307 1.255 0.323 C D 4.09 4.09 4.29 4.29 0.161 0.161 0.169 0.169 E F 4.09 14.91 4.29 15.11 0.161 0.587 0.169 0.595 G H 30.12 38.00 30.30 38.23 1.186 1.496 1.193 1.505 J K 11.68 8.92 12.22 9.60 0.460 0.351 0.481 0.378 L M 0.76 12.60 0.84 12.85 0.030 0.496 0.033 0.506 N O 25.15 1.98 25.42 2.13 0.990 0.078 1.001 0.084 Eoff Remarks: Switching times may increase for VCE (Clamp) > 0.8 • VCES, higher TJ or increased RG td(on) Inductive load, TJ = 125°C t ri IC = IC90, VGE = 15 V, L = 100 mH 220 ns Eon VCE = 0.8 VCES, RG = 2.7 W 4.7 mJ P Q 4.95 26.54 5.97 26.90 0.195 1.045 0.235 1.059 td(off) Remarks: Switching times may increase for VCE (Clamp) > 0.8 • VCES, higher TJ or increased RG 450 ns R S 3.94 4.72 4.42 4.85 0.155 0.186 0.174 0.191 ns T U 24.59 -0.05 25.07 0.1 0.968 -0.002 0.987 0.004 tfi tfi Eoff 340 600 6 RthJC mJ 0.50 K/W RthCK 0.05 Reverse Diode (FRED) Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. Symbol Test Conditions VF IF = IC90, VGE = 0 V, Pulse test, t £ 300 ms, duty cycle d £ 2 % IRM t rr IF = IC90, VGE = 0 V, -diF/dt = 480 A/ms VR = 360 V TJ = 125°C IF = 1 A; -di/dt = 200 A/ms; VR = 30 V TJ = 25°C RthJC © 2000 IXYS All rights reserved K/W 19 175 35 1.8 V 50 A ns ns 0.80 K/W IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 2-5 IXSN52N60AU1 Fig.1 Saturation Characteristics 80 TJ = 25°C Fig.2 Output Characterstics 200 13V VGE = 15V 160 60 11V 50 IC - Amperes IC - Amperes VGE = 15V TJ = 25°C 180 70 40 30 20 9V 140 13V 120 100 80 11V 60 40 10 9V 20 7V 7V 0 0 0 1 2 3 4 5 0 2 4 6 VCE - Volts Fig.4 Temperature Dependence of Output Saturation Voltage 1.5 TJ = 25°C 9 VCE(sat) - Normalized 8 7 VCE - Volts VGE=15V 1.4 6 5 IC = 80A 4 IC = 40A 3 2 9 10 1.2 1.1 IC = 40A 1.0 0.9 0.8 0 8 IC = 80A 1.3 IC = 20A IC = 20A 1 10 12 14 16 18 20 VCE - Volts Fig.3 Collector-Emitter Voltage vs. Gate-Emitter Voltage 10 8 11 12 13 14 0.7 -50 15 -25 0 VGE - Volts 25 50 75 100 125 150 TJ - Degrees C Fig.5 Input Admittance Fig.6 Temperature Dependence of Breakdown and Threshold Voltage 1.3 80 VCE = 10V BV / VGE(th) - Normalized 70 IC - Amperes 60 50 40 TJ = 25°C 30 TJ = 125°C 20 TJ = - 40°C 10 0 4 5 6 7 8 9 VGE - Volts © 2000 IXYS All rights reserved 10 11 12 13 BVCES 1.2 IC = 3mA 1.1 1.0 0.9 VGE8th) 0.8 0.7 -50 IC = 4mA -25 0 25 50 75 100 125 150 TJ - Degrees C 3-5 IXSN52N60AU1 Fig.7 Turn-Off Energy per Pulse and Fall Time on Collector Current 1000 Fig.8 Dependence of Turn-Off Energy Per Pulse and Fall Time on RG 12 1000 10 TJ = 125°C 9 Eoff 500 6 tfi 250 3 0 0 10 20 30 40 50 60 70 tfi - nanoseconds 750 IC = 52A 800 Eoff - millijoules tfi - nanoseconds RG = 10W Eoff 8 600 6 400 4 tfi 200 2 0 0 80 Eoff - millijoules TJ = 125°C 0 10 20 IC - Amperes 30 40 0 50 RG - Ohms Fig.9 Gate Charge Characteristic Curve Fig.10 Turn-Off Safe Operating Area 1000 15 IC = 52A VCE = 480V 100 TJ = 125°C IC - Amperes VGE - Volts 12 9 6 RG = 2.7W 10 dV/dt < 6V/ns 1 0.1 3 0.01 0 0 50 100 150 200 0 250 100 200 300 400 500 600 700 VCE - Volts Qg - nCoulombs Fig.11 Transient Thermal Impedance Thermal Response - K/W 1 Diode 0.1 IGBT Single Pulse 0.01 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 Time - Seconds © 2000 IXYS All rights reserved 4-5 IXSN52N60AU1 Fig. 12 Forward current versus voltage drop. Fig. 13 Recovery charge versus -diF/dt. Fig. 14 Peak reverse current versus -diF/dt. Fig. 15. Dynamic parameters versus junction temperature. Fig. 16 Recovery time versus -diF/dt. Fig. 17 Peak forward voltage vs. diF/dt. Fig. 18 Transient thermal impedance junction to case. © 2000 IXYS All rights reserved 5-5