HiPerFASTTM IGBT with Diode IXGH 32N60CD1 IXGT 32N60CD1 VCE(SAT)typ tfi(typ) Light Speed Series Symbol Test Conditions VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C 60 A IC90 TC = 90°C 32 A ICM TC = 25°C, 1 ms 120 A SSOA (RBSOA) VGE = 15 V, TVJ = 125°C, RG = 10 Ω Clamped inductive load @ 0.8 VCES ICM = 64 A PC TC = 25°C 200 W Maximum Ratings -55 ... +150 °C TJM 150 °C Tstg -55 ... +150 °C 300 °C 1.13/10 Nm/lb.in. 6 5 g g TJ Maximum Lead and Tab temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Md Mounting torque, TO-247 AD Weight TO-247 AD TO-268 Symbol Test Conditions BVCES IC = 250µA, VGE = 0 V 600 VGE(th) IC = 250 µA, VCE = VGE 2.5 ICES VCE = 0.8 • VCES VGE = 0 V IGES VCE = 0 V, VGE = ±20 V VCE(sat) IC = IC90, VGE = 15 V © 2002 IXYS All rights reserved VCES IC25 Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. V TJ = 25°C TJ = 125°C 2.1 5.0 V 200 3 µA mA ±100 nA 2.5 V = 600 V = 60 A = 2.1 V = 55 ns TO-247 AD (IXGH) G C (TAB) C E TO-268 (D3) ( IXGT) G C (TAB) E G = Gate E = Emitter C = Collector Features z International standard TO-247AD package z High current handling capability z Latest generation HDMOSTM process z MOS Gate turn-on - drive simplicity Applications z Uninterruptible power supplies (UPS) z Switched-mode and resonant-mode power supplies z AC motor speed control z DC servo and robot drives z DC choppers Advantages z High power density z Very fast switching speeds for high frequency applications z High power surface mountable package 97544E (6/02) IXGH 32N60CD1 IXGT 32N60CD1 Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. gfs IC = IC90; VCE = 10 V, Pulse test, t ≤ 300 µs, duty cycle ≤ 2 % 25 S 2700 pF 240 pF Cres 50 pF Qg 110 nC 22 nC 40 nC Cies Coes Qge VCE = 25 V, VGE = 0 V, f = 1 MHz IC = IC90, VGE = 15 V, VCE = 0.5 VCES Qgc td(on) Inductive load, TJ = 25°°C 25 ns tri IC = IC90, VGE = 15 V VCE = 0.8 VCES, RG = Roff = 4.7 Ω 20 ns 85 ns td(off) tfi Eoff td(on) tri Eon td(off) tfi Eoff Remarks: Switching times may increase for VCE (Clamp) > 0.8 • VCES, higher TJ or increased RG 55 ns 0.32 mJ 25 ns 25 ns 1 mJ Inductive load, TJ = 125°°C IC = IC90, VGE = 15 V VCE = 0.8 VCES, RG = Roff = 4.7 Ω Remarks: Switching times may increase for VCE (Clamp) > 0.8 • VCES, higher TJ or increased RG RthJC RthCK Reverse Diode (FRED) 110 170 ns 100 160 ns 0.85 1.25 mJ 0.25 0.62 K/W K/W TO-247 AD Outline ∅P e Dim. Millimeter Min. Max. A 4.7 5.3 A1 2.2 2.54 A2 2.2 2.6 b 1.0 1.4 1.65 2.13 b1 b2 2.87 3.12 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 ∅P 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 S 6.15 BSC Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 242 BSC TO-268 Outline Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. Symbol Test Conditions VF IF = IC90, VGE = 0 V, Pulse test t ≤ 300 µs, duty cycle d ≤ 2 % IRM t rr IF = IC90, VGE = 0 V, -diF/dt = 100 A/µs 6 VR = 100 V TJ = 100°C 100 IF = 1 A; -di/dt = 100 A/µs; VR = 30 V TJ = 25°C 25 TJ =150°C TJ = 25°C 1.6 2.5 V V A ns ns Terminals: 1 - Gate 3 - Emitter 2 - Collector 0.9 K/W RthJC IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025 6,306,728B1 IXGH 32N60CD1 IXGT 32N60CD1 200 100 VGE = 15V 13V TJ = 25°C VGE = 15V 160 IC - Amperes 80 IC - Amperes TJ = 25°C 9V 11V 60 40 7V 13V 11V 120 9V 80 7V 40 20 5V 0 0 0 1 2 3 4 5 5V 0 2 4 8 10 VCE - Volts VCE - Volts Fig. 2. Extended Output Characteristics Fig. 1. Output Characteristics 100 1.50 11V TJ = 125°C VGE = 15V 9V 13V VGE = 15V VCE (sat) - Normalized 80 IC - Amperes 6 60 7V 40 20 IC = 64A 1.25 IC = 32A 1.00 IC = 16A 0.75 5V 0 0 1 2 3 4 0.50 5 25 50 75 VCE - Volts 100 125 150 TJ - Degrees C Fig. 4. Temperature Dependence of VCE(sat) Fig. 3. High Temperature Output Characteristics 10000 100 VCE = 10V f = 1Mhz Ciss Capacitance - pF IC - Amperes 80 60 40 TJ = 125°C 1000 Coss 100 Crss 20 TJ = 25°C 0 3 4 5 6 7 VGE - Volts Fig. 5. Admittance Curves © 2002 IXYS All rights reserved 8 9 10 10 0 5 10 15 20 25 VCE-Volts Fig. 6. Capacitance Curves 30 35 40 IXGH 32N60CD1 IXGT 32N60CD1 4 1.00 TJ = 125°C 4 8 TJ = 125°C E(OFF) 2 0.50 1 0.25 E(ON) - millijoules E(ON) IC = 64A 3 E(OFF) 2 4 E(ON) 0 0 20 40 60 2 IC = 16A E(OFF) 0 0 0 80 10 20 30 40 50 60 RG - Ohms IC - Amperes Fig. 7. Dependence of EON and EOFF on IC. Fig. 8. Dependence of EON and EOFF on RG. 16 100 64 IC = 32A VCE = 300V IC - Amperes 12 VGE - Volts E(OFF) IC = 32A 1 E(ON) 0.00 6 E(ON) E(OFF) - millijoules 3 0.75 E(OFF) - milliJoules E(ON) - millijoules RG = 10Ω 8 TJ = 125°C 10 RG = 4.7Ω dV/dt < 5V/ns 1 4 0.1 0 0 25 50 75 100 0 125 100 200 300 400 500 600 VCE - Volts Qg - nanocoulombs Fig. 10. Turn-off Safe Operating Area Fig. 9. Gate Charge 1 D=0.5 ZthJC (K/W) D=0.2 0.1 D=0.1 D=0.05 D=0.02 0.01 D=0.01 D = Duty Cycle Single pulse 0.001 0.00001 0.0001 Fig. 11. Transient Thermal Resistance 0.001 0.01 0.1 1 Pulse Width - Seconds IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025 6,306,728B1 IXGH 32N60CD1 IXGT 32N60CD1 60 A 50 IF 30 1000 T = 100°C VJ nC VR = 300V 40 TVJ=150°C 30 25 IF= 60A IF= 30A IF= 15A 800 Qr TVJ= 100°C VR = 300V A IF= 60A IF= 30A IF= 15A IRM 20 600 15 TVJ=100°C 400 20 10 TVJ=25°C 200 10 0 0 1 2 5 0 100 3 V 0 A/µs 1000 -diF/dt VF Fig. 12 Forward current IF versus VF Fig. 13 Reverse recovery charge Qr versus -diF/dt 2.0 90 1.0 IRM 1.00 µs V FR tfr 0.75 tfr 80 IF= 60A IF= 30A IF= 15A 600 A/µs 800 1000 -diF/dt 400 Fig. 14 Peak reverse current IRM versus -diF/dt VFR 15 trr Kf 200 20 TVJ= 100°C IF = 30A V TVJ= 100°C VR = 300V ns 1.5 0 10 0.50 5 0.25 70 0.5 Qr 0.0 60 0 40 80 120 °C 160 0 0 200 TVJ 400 600 800 1000 A/µs 0 400 -diF/dt Fig. 15 Dynamic parameters Qr, IRM versus TVJ Fig. 16 Recovery time trr versus -diF/dt 1 K/W 0.00 600 A/µs 800 1000 diF/dt Fig. 17 Peak forward voltage VFR and tfr versus diF/dt Constants for ZthJC calculation: i 1 2 3 0.1 ZthJC 0.01 0.001 0.00001 200 DSEP 29-06 0.0001 0.001 0.01 s 0.1 t Fig. 18 Transient thermal resistance junction to case © 2002 IXYS All rights reserved 1 Rthi (K/W) ti (s) 0.502 0.193 0.205 0.0052 0.0003 0.0162