HiPerFASTTM IGBT IXGH30N30 VCES IC25 VCE(sat) tfi = = = = 300 V 60 A 1.6 V 180 ns Preliminary data Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 300 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 300 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C 60 A IC90 TC = 90°C 30 A ICM TC = 25°C, 1 ms 120 A SSOA (RBSOA) VGE = 15 V, TVJ = 125°C, RG = 10 W ICM = 60 Clamped inductive load, L = 100 mH @ 0.8 VCES PC TC = 25°C TJ 200 W -55 ... +150 °C 150 °C Tstg -55 ... +150 °C Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Maximum Tab temperature for soldering SMD devices for 10 s Mounting torque (M3) Weight C (TAB) G C E G = Gate, E = Emitter, C = Collector, TAB = Collector A TJM Md TO-247 AD TO-247 AD 300 °C 260 °C 1.13/10 Nm/lb.in. 6 g Features · International standard package JEDEC TO-247 AD · High current handling capability · Newest generation HDMOSTM process · MOS Gate turn-on - drive simplicity Applications Symbol Test Conditions BVCES IC = 250 mA, VGE = 0 V 300 VGE(th) IC = 250 mA, VCE = VGE 2.5 ICES VCE = 0.8 • VCES VGE = 0 V IGES VCE = 0 V, VGE = ±20 V VCE(sat) IC Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. TJ = 25°C TJ = 125°C = IC90, VGE = 15 V IXYS reserves the right to change limits, test conditions, and dimensions. © 2000 IXYS All rights reserved AC motor speed control DC servo and robot drives DC choppers Uninterruptible power supplies (UPS) Switched-mode and resonant-mode power supplies V 5 200 1 ±100 · · · · · V mA mA nA 1.6 Advantages · High power density · Suitable for surface mounting · Switching speed for high frequency applications V · Easy to mount with 1 screw, (isolated mounting screw hole) 96542C (7/00) 1-4 IXGH 30N30 Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. gfs IC = IC90; VCE = 10 V, Pulse test, t £ 300 ms, duty cycle £ 2 % 28 S 2500 pF 210 pF Cres 60 pF Qg 145 170 nC 23 35 nC 50 75 nC Cies Coes Qge VCE = 25 V, VGE = 0 V, f = 1 MHz IC = IC90, VGE = 15 V, VCE = 0.5 VCES Qgc 20 TO-247 AD (IXGH) Outline Dim. Millimeter Min. Max. Inches Min. Max. td(on) Inductive load, TJ = 25°C 25 ns t ri IC = IC90, VGE = 15 V, L = 100 mH, VCE = 0.8 VCES, RG = Roff = 1.0 W 40 ns 170 ns A B 19.81 20.32 20.80 21.46 0.780 0.800 0.819 0.845 180 ns C D 15.75 16.26 3.55 3.65 0.610 0.640 0.140 0.144 1.0 mJ E F 4.32 5.49 5.4 6.2 0.170 0.216 0.212 0.244 25 ns 40 ns G H 1.65 2.13 4.5 0.065 0.084 0.177 0.3 mJ J K 1.0 1.4 10.8 11.0 0.040 0.055 0.426 0.433 td(off) tfi Eoff td(on) t ri Eon td(off) tfi Eoff Remarks: Switching times may increase for VCE (Clamp) > 0.8 • VCES, higher TJ or increased RG Inductive load, TJ = 125°C IC = IC90, VGE = 15 V, L = 100 mH VCE = 0.8 VCES, RG = Roff = 1.0 W Remarks: Switching times may increase for VCE (Clamp) > 0.8 • VCES, higher TJ or increased RG 250 420 ns 300 450 ns 1.6 2.4 mJ RthJC RthCK © 2000 IXYS All rights reserved L M 4.7 0.4 5.3 0.8 0.185 0.209 0.016 0.031 N 1.5 2.49 0.087 0.102 0.62 K/W 0.25 K/W IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 2-4 IXGH 30N30 Fig. 1. Output Characteristics Fig. 2. Extended Output Characteristics Fig. 3. High Temperature Output Characteristics Fig. 4. Temperature Dependence of VCE(sat) Fig. 5. Admittance Curves © 2000 IXYS All rights reserved Fig. 6. Capacitance Curves) 3-4 IXGH 30N30 Fig. 7. Dependence of EON and EOFF on IC. Fig. 9. Gate Charge Fig. 8. Dependence of EON and EOFF on RG. Fig. 10. Turn-off Safe Operating Area Fig. 11. Transient Thermal Resistance © 2000 IXYS All rights reserved 4-4