High Voltage IGBT IXGH 6N170 IXGT 6N170 VCES IC25 VCE(sat) tfi(typ) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1700 V VGES Continuous ± 20 V VGEM Transient ± 30 V IC25 TC = 25°C 12 A IC90 TC = 90°C 6 A ICM TC = 25°C, 1 ms 24 A SSOA (RBSOA) VGE = 15 V, TVJ = 125°C, RG = 33 Ω Clamped inductive load PC TC = 25°C ICM = 12 @ 0.8 VCES A 75 W °C TJM 150 °C Tstg -55 ... +150 °C Maximum Lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Maximum Tab temperature for soldering SMD devices for 10 s Md Mounting torque (M3) TO-247 Weight 300 °C 260 °C 1.13/10Nm/lb.in. TO-247 AD TO-268 6 4 TO-268 (IXGT) G E g g C (TAB) TO-247 AD (IXGH) G -55 ... +150 TJ = 1700 V = 12 A = 4.0 V = 290 ns G = Gate, E = Emitter, C (TAB) C E C = Collector, TAB = Collector Features z z z z z International standard packages JEDEC TO-268 and JEDEC TO-247 AD High current handling capability MOS Gate turn-on - drive simplicity Rugged NPT structure Molding epoxies meet UL 94 V-0 flammability classification Applications Symbol Test Conditions Characteristic Values (TJ = 25°C unless otherwise specified) min. typ. max. z z z z = 250 μA, VGE = 0 V = 250 μA, VCE = VGE BVCES VGE(th) IC IC ICES VCE = 0.8 • VCES VGE = 0 V IGES VCE = 0 V, VGE = ± 20 V VCE(sat) IC = IC90, VGE = 15 V © 2006 IXYS All rights reserved 1700 3.0 TJ = 125°C TJ = 125°C 3.0 4.0 5.0 V V 10 100 μA μA ±100 nA 4.0 V V z z Capacitor discharge & pulser circuits AC motor speed control DC servo and robot drives DC choppers Uninterruptible power supplies (UPS) Switched-mode and resonant-mode power supplies Advantages z z z High power density Suitable for surface mounting Easy to mount with 1 screw, (isolated mounting screw hole) DS98989B(09/06) IXGH 6N170 IXGT 6N170 Symbol Test Conditions Characteristic Values (TJ = 25°C unless otherwise specified) min. typ. max. gfs IC = IC90; VCE = 10 V, Pulse test, t ≤ 300 μs, duty cycle ≤ 2 % IC(ON) VGE = 15V, VCE = 10V 4 .5 S 28 A 330 pF 23 pF Cres 6 pF Qg 20 nC 3 Cies Coes Qge VCE = 25 V, VGE = 0 V, f = 1 MHz IC = IC90, VGE = 15 V, VCE = 0.5 VCES Qgc td(on) Inductive load, TJ = 25°°C tri IC = IC90, VGE = 15 V VCE = 0.8 VCES, RG = Roff = 33 Ω td(off) tfi Eoff td(on) tri Eon td(off) tfi Eoff 3.6 nC 8 nC 40 ns 36 Remarks: Switching times may increase for VCE (Clamp) > 0.8 • VCES, higher TJ or increased RG Inductive load, TJ = 125°°C IC = IC90, VGE = 15 V VCE = 0.8 VCES, RG = Roff = 33 Ω Remarks: Switching times may increase for VCE (Clamp) > 0.8 • VCES, higher TJ or increased RG 500 ns 290 500 ns 1.5 2.5 mJ 45 ns 40 ns 0.5 mJ 300 ns 300 ns 2.0 mJ RthJC RthCK ns 250 TO-247 AD Outline ∅P e Dim. Millimeter Min. Max. A 4.7 5.3 A1 2.2 2.54 A2 2.2 2.6 b 1.0 1.4 b1 1.65 2.13 b2 2.87 3.12 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 ∅P 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 S 6.15 BSC Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 242 BSC TO-268 Outline 1.65 K/W (TO-247) 0.25 K/W Dim. Min Recommended Footprint A A1 A2 b b2 C D E E1 e H L L1 Millimeter Min. Max. 4.9 5.1 2.7 2.9 .02 .25 1.15 1.45 1.9 2.1 .4 .65 13.80 14.00 15.85 16.05 13.3 13.6 5.45 BSC 18.70 19.10 2.40 2.70 1.20 1.40 Inches Min. Max. .193 .201 .106 .114 .001 .010 .045 .057 .75 .83 .016 .026 .543 .551 .624 .632 .524 .535 .215 BSC .736 .752 .094 .106 .047 .055 L2 L3 L4 1.00 1.15 0.25 BSC 3.80 4.10 .039 .045 .010 BSC .150 .161 IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or moreof the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123B1 6,306,728B1 6,404,065B1 6,534,343 6,583,505 6,683,344 6,710,405B2 6,710,463 6,727,585 6,759,692 6,771,478B2 7,005,734B2 7,063,975B2 7,071,537 7,063,975B2 7,071,537 IXGH 6N170 IXGT 6N170 Fig. 1. Output Characteristics @ 25ºC Fig. 2. Exteded Output Characteristics @ 25ºC 30 12 VGE = 15V 13V 11V 11 10 VGE = 15V 27 13V 24 21 8 IC - Amperes I C - Amperes 9 7 9V 6 5 4 11V 18 15 12 9V 9 7V 3 6 2 7V 3 1 0 0 0 1 2 3 4 5 0 6 2 4 6 Fig. 3. Output Characteristics @ 125ºC 14 16 18 125 150 VGE = 15V 1.8 VCE(sat) - Normalized IC - Amperes 12 2.0 VGE = 15V 13V 11V 8 9V 6 4 7V 2 I C = 12A 1.6 1.4 I C = 6A 1.2 1.0 0.8 I C = 3A 0.6 0 0 1 2 3 4 5 6 7 -50 8 -25 0 25 50 75 100 TJ - Degrees Centigrade VCE - Volts Fig. 6. Transconductance Fig. 5. Input Admittance 10 5 9 4.5 8 4 7 3.5 g f s - Siemens IC - Amperes 10 Fig. 4. Dependence of VCE(sat) on Junction Temperature 12 10 8 VCE - Volts VCE - Volts 6 5 4 TJ = -40ºC 25ºC 3 125ºC 2.5 2 1.5 3 TJ = 125ºC 25ºC - 40ºC 2 1 1 0.5 0 0 3 3.5 4 4.5 5 5.5 6 VGE - Volts © 2006 IXYS All rights reserved 6.5 7 7.5 8 8.5 0 1 2 3 4 5 I C - Amperes 6 7 8 9 10 IXGH 6N170 IXGT 6N170 Fig. 7. Gate Charge Fig. 8. Capacitance 1,000 16 f = 1 MHz VCE = 850V 14 I G = 10 mA 12 VGE - Volts Capacitance - PicoFarads I C = 6A 10 8 6 4 C ies 100 C oes 10 C res 2 0 1 0 2 4 6 8 10 12 14 16 18 20 0 5 10 15 20 25 30 35 QG - NanoCoulombs VCE - Volts Fig. 9. Reverse-Bias Safe Operating Area Fig. 10. Maximum Transient Thermal Resistance 40 10.0 13 12 11 10 R(th)JC - ºC / W IC - Amperes 9 8 7 6 5 1.0 4 3 TJ = 125ºC 2 RG = 33Ω dV / dT < 10V / ns 1 0 100 300 500 700 900 1100 1300 1500 1700 VCE - Volts IXYS reserves the right to change limits, test conditions, and dimensions. 0.1 0.0001 0.001 0.01 0.1 Pulse Width - Seconds 1 10