Symbol Test Conditions VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 600 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C, limited by leads 75 A IC90 TC = 90°C 60 A ICM TC = 25°C, 1 ms 200 A SSOA (RBSOA) VGE = 15 V, TVJ = 125°C, RG = 10 W Clamped inductive load, L = 30 mH ICM = 100 @ 0.8 VCES A PC TC = 25°C 300 W Maximum Ratings -55 ... +150 °C TJ 150 °C Tstg -55 ... +150 °C Mounting torque (M3) 1.13/10 Nm/lb.in. Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Weight TO-247 TO-264 TO-268 Symbol Test Conditions BVCES IC = 250 mA, VGE = 0 V 600 VGE(th) IC = 250 mA, VCE = VGE 2.5 ICES VCE = 0.8 • VCES VGE = 0 V IGES VCE = 0 V, VGE = ±20 V VCE(sat) IC = IC90, VGE = 15 V IXYS reserves the right to change limits, test conditions, and dimensions. © 2000 IXYS All rights reserved 300 °C 6 10 4 g g g Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. TJ = 25°C TJ = 125°C TO-247 AD (IXGH) G C E TO-268 (IXGT) G E (TAB) TO-264 (IXGK) TJM Md VCES = 600 V IC25 = 75 A VCE(sat) = 1.7 V IXGH 60N60 IXGK 60N60 IXGT 60N60 Ultra-Low VCE(sat) IGBT V 5 V 200 1 mA mA ±100 nA 1.7 V G D G = Gate, E = Emitter, D (TAB) S C = Collector, TAB = Collector Features • International standard package JEDEC TO-247 AD, TO-264, TO-268 • New generation HDMOSTM process • Low VCE(sat) for minimum on-state conduction losses • High current handling capability • MOS Gate turn-on drive simplicity Applications • AC motor speed control • DC servo and robot drives • DC choppers • Uninterruptible power supplies (UPS) • Switch-mode and resonant-mode power supplies Advantages • Easy to mount with 1 screw (isolated mounting screw hole) • Low losses, high efficiency • High power density • High power, surface mount package 92796L (7/00) 1-4 IXGH 60N60 IXGK 60N60 IXGT 60N60 Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. gfs IC = IC90; VCE = 10 V, Pulse test, t £ 300 ms, duty cycle £ 2 % 30 C ies S 3700 pF 290 pF C res 86 pF Qg 130 nC 30 nC 45 Inductive load, TJ = 25°C IC = IC90, VGE = 15 V, L = 100 mH, VCE = 0.8 VCES, RG = Roff = 2.7 W Coes Qge VCE = 25 V, VGE = 0 V, f = 1 MHz 55 IC = IC90, VGE = 15 V, VCE = 0.5 VCES Qgc td(on) t ri td(off) tfi Eoff td(on) Remarks: Switching times may increase for VCE (Clamp) > 0.8 • VCES, higher TJ or increased RG 0.780 0.800 0.819 0.845 nC C D 15.75 16.26 3.55 3.65 0.610 0.640 0.140 0.144 50 ns 25 ns E F 4.32 5.49 5.4 6.2 0.170 0.216 0.212 0.244 G H 1.65 2.13 4.5 0.065 0.084 0.177 1.0 1.4 10.8 11.0 0.040 0.055 0.426 0.433 300 600 ns 360 570 ns J K 8 15 mJ L M 4.7 0.4 5.3 0.8 0.185 0.209 0.016 0.031 N 1.5 2.49 0.087 0.102 50 ns IC = IC90, VGE = 15 V, L = 100 mH 25 ns Eon VCE = 0.8 VCES, RG = Roff = 2.7 W 3 mJ td(off) Remarks: Switching times may increase for VCE (Clamp) > 0.8 • VCES, higher TJ or increased RG 650 ns 550 ns 17 mJ RthJC RthCK Inches Min. Max. 19.81 20.32 20.80 21.46 Inductive load, TJ = 125°C Eoff Dim. Millimeter Min. Max. A B t ri tfi TO-247 AD (IXFH) Outline TO-264 AA (IXFK) Outline 0.42 K/W (IXGH) (IXGK) 0.25 0.15 K/W K/W Dim. TO-268AA (IXFT) (D3 PAK) Dim. A A1 A2 b b2 C D E E1 e H L L1 L2 L3 L4 © 2000 IXYS All rights reserved Millimeter Min. Max. 4.9 5.1 2.7 2.9 .02 .25 1.15 1.45 1.9 2.1 .4 .65 13.80 14.00 15.85 16.05 13.3 13.6 5.45 BSC 18.70 19.10 2.40 2.70 1.20 1.40 1.00 1.15 0.25 BSC 3.80 4.10 Inches Min. Max. .193 .201 .106 .114 .001 .010 .045 .057 .75 .83 .016 .026 .543 .551 .624 .632 .524 .535 .215 BSC .736 .752 .094 .106 .047 .055 .039 .045 .010 BSC .150 .161 A A1 A2 b b1 b2 c D E e J K L L1 P Q Q1 R R1 S T Millimeter Min. Max. 4.82 2.54 2.00 1.12 2.39 2.90 0.53 25.91 19.81 5.46 0.00 0.00 20.32 2.29 3.17 6.07 8.38 3.81 1.78 6.04 1.57 5.13 2.89 2.10 1.42 2.69 3.09 0.83 26.16 19.96 BSC 0.25 0.25 20.83 2.59 3.66 6.27 8.69 4.32 2.29 6.30 1.83 Inches Min. Max. .190 .202 .100 .114 .079 .083 .044 .056 .094 .106 .114 .122 .021 .033 1.020 1.030 .780 .786 .215 BSC .000 .010 .000 .010 .800 .820 .090 .102 .125 .144 .239 .247 .330 .342 .150 .170 .070 .090 .238 .248 .062 .072 Min. Recommended Footprint IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 2-4 IXGH 60N60 100 IXGK 60N60 IXGT 60N60 350 TJ = 25°C 90 VGE = 15V TJ = 25°C 13V 300 VGE = 15V 13V 11V 9V 7V 70 60 50 IC - Amperes IC - Amperes 80 40 30 250 11V 200 150 9V 100 20 50 10 7V 0 0 0 1 2 3 4 0 5 2 4 8 10 VCE - Volts VCE - Volts Fig. 1. Saturation Voltage Characteristics Fig. 2. Extended Output Characteristics 200 1.8 VGE = 15V VGE = 15V IC = 120A 1.6 VCE (sat) - Normalized 175 150 IC - Amperes 6 125 o TJ = 25 C 100 TJ = 125oC 75 50 1.4 1.2 IC = 60A 1.0 IC = 30A 0.8 25 0 0 1 2 3 0.6 25 4 50 75 100 125 150 VCE - Volts TJ - Degrees C Fig. 3. Saturation Voltage Characteristics Fig. 4. Temperature Dependence of VCE(sat) 1.3 BV/VGE(th) - Normalized IC - Amperes 100 10 o TJ = 125 C RG = 4.7W dV/dt < 5V/ns 1 0.1 0 100 200 300 400 500 VCE - Volts Fig. 5. Turn-off Safe Operating Area © 2000 IXYS All rights reserved 600 1.2 VGE(th) IC = 250µA BVCES IC = 250µA 1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 100 125 150 TJ - Degrees C Fig. 6. Temperature Dependence of BVCES & VGE(th) 3-4 IXGH 60N60 1000 40 18 1000 TJ = 125°C IC = 60A 500 20 Eoff 250 10 0 0 20 40 60 80 100 0 120 16 800 tfi 600 14 400 12 10 200 0 10 IC - Amperes 40 50 10000 Capacitance - picofards VGE - Volts 30 Fig. 8. Dependence of tfi and EOFF on RG. IC = 60A VCE = 300V 12 20 RG - Ohms Fig. 7. Dependence of tfi and EOFF on IC. 15 Eoff Eoff - millijoules 30 tfi tfi - nanoseconds RG = 10W Eoff - milliJoules tfi - nanoseconds TJ = 125°C 750 IXGK 60N60 IXGT 60N60 9 6 3 0 Cies 1000 100 10 0 50 100 150 200 250 0 QG - nanocoulombs 10 20 30 40 VCE - Volts Fig. 9. Gate Charge Fig. 10. Junction Capacitance Curves ZthJC (K/W) 1 0.1 0.01 0.001 0.00001 0.0001 0.001 0.01 0.1 1 Pulse Width - Seconds Fig. 11. Transient Thermal Resistance © 2000 IXYS All rights reserved 4-4