HiPerFASTTM IGBT IXGH 15N120B VCES = 1200 V = 30 A IXGT 15N120B IC25 VCE(sat) = 3.2 V tfi(typ) = 160 ns Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1200 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C 30 A IC90 TC = 90°C 15 A ICM TC = 25°C, 1 ms 60 A SSOA (RBSOA) VGE = 15 V, TVJ = 125°C, RG = 10 Ω Clamped inductive load ICM = 40 @ 0.8 VCES A 150 W -55 ... +150 °C TJM 150 °C Tstg -55 ... +150 °C PC TC = 25°C TJ Maximum Lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Maximum Tab temperature for soldering SMD devices for 10 s Md Mounting torque (M3) TO-247 AD TO-268 G E 300 °C 260 °C 6 4 g g C (TAB) TO-247 AD (IXGH) G 1.13/10Nm/lb.in. Weight TO-268 (IXGT) G = Gate, E = Emitter, C (TAB) C E C = Collector, TAB = Collector Features z z z International standard packages JEDEC TO-268 surface and JEDEC TO-247 AD Low switching losses, low V(sat) MOS Gate turn-on - drive simplicity Applications Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. = 250 µA, VGE = 0 V = 250 µA, VCE = VGE BVCES VGE(th) IC IC ICES VCE = VCES VGE = 0 V IGES VCE = 0 V, VGE = ±20 V VCE(sat) IC = IC90, VGE = 15 V © 2002 IXYS All rights reserved 1200 2.5 TJ = 25°C TJ = 125°C TJ = 125°C 2.5 z z z z 5 V V 100 3.5 µA mA ±100 nA z 3.2 V V z z AC motor speed control DC servo and robot drives DC choppers Uninterruptible power supplies (UPS) Switched-mode and resonant-mode power supplies Advantages z High power density Suitable for surface mounting Easy to mount with 1 screw, (isolated mounting screw hole) 98659-A (7-02) IXGH 15N120B IXGT 15N120B Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. gfs IC = IC90; VCE = 10 V, Pulse test, t ≤ 300 µs, duty cycle ≤ 2 % 12 15 S ∅P 1720 pF 95 pF Cres 35 pF Qg 69 nC 13 nC 26 nC Cies Coes Qge VCE = 25 V, VGE = 0 V, f = 1 MHz IC = IC90, VGE = 15 V, VCE = 0.5 VCES Qgc td(on) Inductive load, TJ = 25°°C 25 ns tri IC = IC90, VGE = 15 V VCE = 0.8 VCES, RG = Roff = 10 Ω 15 ns td(off) tfi Eoff td(on) tri Eon td(off) tfi Eoff Remarks: Switching times may increase for VCE (Clamp) > 0.8 • VCES, higher TJ or increased RG 180 280 ns 160 320 ns 1.75 3.0 mJ 25 ns 18 ns 0.60 mJ 300 ns 360 ns 3.5 mJ Inductive load, TJ = 125°°C IC = IC90, VGE = 15 V VCE = 0.8 VCES, RG = Roff = 10 Ω Remarks: Switching times may increase for VCE (Clamp) > 0.8 • VCES, higher TJ or increased RG e Dim. Millimeter Min. Max. A 4.7 5.3 A1 2.2 2.54 A2 2.2 2.6 b 1.0 1.4 b1 1.65 2.13 b2 2.87 3.12 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 ∅P 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 S 6.15 BSC Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 242 BSC TO-268 Outline 0.83 K/W RthJC RthCK TO-247 AD Outline (TO-247) 0.25 K/W Dim. Min Recommended Footprint A A1 A2 b b2 C D E E1 e H L L1 Millimeter Min. Max. 4.9 5.1 2.7 2.9 .02 .25 1.15 1.45 1.9 2.1 .4 .65 13.80 14.00 15.85 16.05 13.3 13.6 5.45 BSC 18.70 19.10 2.40 2.70 1.20 1.40 Inches Min. Max. .193 .201 .106 .114 .001 .010 .045 .057 .75 .83 .016 .026 .543 .551 .624 .632 .524 .535 .215 BSC .736 .752 .094 .106 .047 .055 L2 L3 L4 1.00 1.15 0.25 BSC 3.80 4.10 .039 .045 .010 BSC .150 .161 IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025 6,306,728B1 IXGH 15N120B IXGT 15N120B 150 50 TJ = 25OC 9V VGS = 15V 13V 11V 30 7V 20 13V 100 IC - Amperes IC - Amperes 40 VGE = 15V TJ = 25oC 125 11V 75 9V 50 10 7V 25 5V 0 0 2 5V 4 6 8 0 10 0 5 15 VCE - Volts VCE - Volts Fig. 1. Saturation Voltage Characteristics @ 25oC Fig. 2. Extended Output Characteristics 50 1.6 TJ = 125OC VGE = 15V VGS = 15V 13V 11V 30 VCE (SAT) - Normalized 40 IC - Amperes 10 9V 7V 20 10 IC = 30A 1.4 1.2 IC = 15A 1.0 IC = 7.5A 0.8 0.6 5V 0 0 2 4 6 8 0.4 10 -25 0 VCE - Volts 75 100 125 150 Fig. 4. Temperature Dependence of VCE(sat) 10000 o TJ = 125 C Capacitance - pF IC - Amperes 50 TJ - Degrees C Fig. 3. Saturation Voltage Characteristics @ 125oC 60 55 50 45 40 35 30 25 20 15 10 5 0 25 o TJ = 25 C 1000 100 TJ = -40oC 4 5 6 7 8 VGE - Volts Fig. 5. Admittance Curves © 2002 IXYS All rights reserved 9 10 10 IXG_15N120B-P1 0 5 10 15 20 25 30 35 VCE - Volts Fig. 6. Capacitance Curves 40 IXGH 15N120B IXGT 15N120B 8 8 TJ = 125°C 6 5 E(OFF) 4 3 2 E(OFF) IC = 30A 6 5 4 3 IC = 15A E(OFF) IC = 7.5A E(OFF) 2 1 1 0 TJ = 125°C 7 RG = 10Ω E(OFF) - millijoules E(OFF) - millijoules 7 0 5 10 15 20 25 30 35 0 10 20 30 40 50 60 RG - Ohms IC - Amperes Fig. 7. Dependence of tfi and EOFF on IC. Fig. 8. Dependence of tfi and EOFF on RG. 16 100 IC = 15A VCE = 600V 14 30 IC - Amperes VGE - Volts 12 10 8 6 10 TJ = -55 to +125°C RG = 10Ω dV/dt < 5V/ns 1 4 2 0 0 10 20 30 40 0.1 50 0 200 Qg - nanocoulombs 400 600 800 1000 1200 VCE - Volts Fig. 9. Gate Charge Fig. 10. Turn-off Safe Operating Area 1 D=0.5 ZthJC (K/W) D=0.2 0.1 D=0.1 D=0.05 D=0.02 0.01 D=0.01 Single pulse D = Duty Cycle 0.001 0.00001 0.0001 0.001 0.01 0.1 1 Pulse Width - Seconds Fig. 11. Transient Thermal Resistance IXGH15N120B-P2 IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025 6,306,728B1