Preliminary Data Sheet IXGH32N50B VCES IXGH32N50BS I C25 VCE(sat) tfi HiPerFASTTM IGBT = = = = 500 V 60 A 2.0 V 80 ns TO-247 SMD (32N50BS) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 500 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 500 V V GES Continuous ±20 V V GEM Transient ±30 V I C25 TC = 25°C 60 A I C90 TC = 90°C 32 A I CM TC = 25°C, 1 ms 120 A SSOA (RBSOA) VGE = 15 V, TVJ = 125°C, RG = 33 Ω Clamped inductive load, L = 100 µH PC TC = 25°C TJ ICM = 64 @ 0.8 VCES A 200 W -55 ... +150 °C TJM 150 °C Tstg -55 ... +150 °C 300 °C Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Md Mounting torque (M3) 1.13/10 Nm/lb.in. Weight TO-247 AD TO-247 SMD 6 4 g g E TO-247 AD C (TAB) G Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. l l IC IC I CES V CE = 0.8 • VCES VGE = 0 V I GES V CE = 0 V, VGE = ±20 V VCE(sat) IC = IC90, VGE = 15 V © 1997 IXYS All rights reserved 500 2.5 TJ = 25°C TJ = 125°C 5 V V 200 1 µA mA ±100 nA 2.0 V C = Collector, TAB = Collector International standard packages JEDEC TO-247 SMD surface mountable and JEDEC TO-247 AD High current handling capability Newest generation HDMOSTM process MOS Gate turn-on - drive simplicity Applications l l l = 250 µA, VGE = 0 V = 250 µA, VCE = VGE BVCES VGE(th) E Features l Test Conditions C G = Gate, E = Emitter, l Symbol C (TAB) G l l l PFC circuits AC motor speed control DC servo and robot drives DC choppers Uninterruptible power supplies (UPS) Switched-mode and resonant-mode power supplies Advantages l l High power density Very fast switching speeds for high frequency applications 95564A (4/97) IXGH32N50B Symbol Test Conditions gfs I C = IC90; VCE = 10 V, Pulse test, t ≤ 300 µs, duty cycle ≤ 2 % Cies Coes 20 2500 pF 230 pF 70 pF VCE = 25 V, VGE = 0 V, f = 1 MHz Qg IC = IC90, VGE = 15 V, VCE = 0.5 VCES Qgc td(on) Inductive load, TJ = 25°°C tri IC = IC90, VGE = 15 V, L = 100 µH, VCE = 0.8 V CES, RG = Roff = 4.7 Ω td(off) tfi Eoff td(on) tri Eon td(off) tfi Eoff S ∅P Cres Qge TO-247 AD Outline Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 15 IXGH32N50BS 125 150 nC 23 35 nC 50 75 nC 25 Remarks: Switching times may increase for VCE (Clamp) > 0.8 • VCES , higher TJ or increased RG Inductive load, TJ = 125°°C IC = IC90, VGE = 15 V, L = 100 µH VCE = 0.8 V CES, RG = Roff = 4.7 Ω Remarks: Switching times may increase for VCE (Clamp) > 0.8 • VCES , higher TJ or increased RG ns 30 ns 100 200 ns 80 150 ns 0.7 1.5 mJ 25 ns 35 ns 0.3 mJ 120 ns 120 ns 1.2 mJ e Dim. Millimeter Min. Max. A 4.7 5.3 A1 2.2 2.54 A2 2.2 2.6 b 1.0 1.4 1.65 2.13 b1 b2 2.87 3.12 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 ∅P 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 S 6.15 BSC Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 242 BSC TO-247 SMD Outline RthJC 0.62 K/W 0.25 RthCK Min. Recommended Footprint K/W (Dimensions in inches and (mm)) 1. Gate 2. Collector Dim. A A1 A2 b b1 C D E e L L1 L2 L3 L4 ØP Q R S 3. Emitter 4. Collector Millimeter Min. Max. 4.83 5.21 2.29 2.54 1.91 2.16 Inches Min. Max. .190 .205 .090 .100 .075 .085 1.14 1.91 0.61 20.80 15.75 5.45 4.90 2.70 2.10 0.00 1.90 3.55 5.59 1.40 2.13 0.80 21.34 16.13 BSC 5.10 2.90 2.30 0.10 2.10 3.65 6.20 .045 .075 .024 .819 .620 .215 .193 .106 .083 .00 .075 .140 .220 .055 .084 .031 .840 .635 BSC .201 .114 .091 .004 .083 .144 .244 4.32 6.15 4.83 BSC .170 .242 .190 BSC IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025