HiPerFASTTM IGBT LightspeedTM Series Symbol Test Conditions IXGA 24N60C IXGP 24N60C Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C 48 A IC110 TC = 110°C 24 A ICM TC = 25°C, 1 ms 96 A SSOA (RBSOA) VGE = 15 V, TVJ = 125°C, RG = 22 Ω Clamped inductive load, L = 100 µH PC TC = 25°C VCES IC25 VCE(sat)typ tfi typ TO-220 AB (IXGP) C (TAB) G C E TO-263 AA (IXGA) ICM = 48 @ 0.8 VCES A 150 W -55 ... +150 °C TJM 150 °C Tstg -55 ... +150 °C G = Gate, E = Emitter, 300 °C Features TJ Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s G z Md Mounting torque (M3) 1.13/10 Nm/lb.in. Weight TO-263 TO-220 2 4 g g z z z z Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. IC = 250 µA, VGE = 0 V 600 VGE(th) IC = 250 µA, VCE = VGE 2.5 ICES VCE = 0.8 • VCES VGE = 0 V IGES VCE = 0 V, VGE = ±20 V VCE(sat) IC = IC110, VGE = 15 V © 2002 IXYS All rights reserved V TJ = 25°C TJ = 150°C 2.1 5 V 200 1 µA mA ±100 nA 2.5 V E C (TAB) C = Collector, TAB = Collector International standard packages JEDEC TO-247 and surface mountable TO-268 High frequency IGBT High current handling capability Latest generation HDMOSTM process MOS Gate turn-on - drive simplicity Applications z z BVCES = 600 V = 48 A = 2.1 V = 60 ns z z z z PFC circuits Uninterruptible power supplies (UPS) Switched-mode and resonant-mode power supplies AC motor speed control DC servo and robot drives DC choppers Advantages z z High power density Very fast switching speeds for high frequency applications 98936 7/02) IXGA 24N60C IXGP 24N60C Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 17 S 1500 pF 120 pF Cres 40 pF Qg 55 nC 13 nC 17 nC gfs IC = IC110; VCE = 10 V, Pulse test, t ≤ 300 µs, duty cycle ≤ 2 % Cies Coes Qge VCE = 25 V, VGE = 0 V, f = 1 MHz 9 IC = IC110, VGE = 15 V, VCE = 0.5 VCES Qgc Inductive load, TJ = 25°°C 15 ns tri IC = IC110, VGE = 15 V, L = 100 µH, VCE = 0.8 VCES, RG = Roff = 10 Ω 25 ns 75 140 ns 60 110 ns Eoff Remarks: Switching times may increase for VCE (Clamp) > 0.8 • VCES, higher TJ or increased RG 0.24 0.36 mJ td(on) Inductive load, TJ = 125°°C tfi tri Eon td(off) tfi Eoff IC = IC110, VGE = 15 V, L = 100 µH VCE = 0.8 VCES, RG = Roff = 10 Ω Remarks: Switching times may increase for VCE (Clamp) > 0.8 • VCES, higher TJ or increased RG 15 ns 25 ns 0.15 mJ 130 ns 110 ns 0.6 mJ A B C D E F G H J K M N Q R Millimeter Min. Max. 12.70 13.97 14.73 16.00 9.91 10.66 3.54 4.08 5.85 6.85 2.54 3.18 1.15 1.65 2.79 5.84 0.64 1.01 2.54 BSC 4.32 4.82 1.14 1.39 0.35 0.56 2.29 2.79 1 - Gate 3 - Emitter Bottom Side Inches Min. Max. 0.500 0.550 0.580 0.630 0.390 0.420 0.139 0.161 0.230 0.270 0.100 0.125 0.045 0.065 0.110 0.230 0.025 0.040 0.100 BSC 0.170 0.190 0.045 0.055 0.014 0.022 0.090 0.110 TO-263 AA Outline 0.83 K/W RthJC RthCK Pins: 2 - Collector 4 - Collector Dim. td(on) td(off) TO-220 AB Outline 0.25 K/W Min. Recommended Footprint (Dimensions in inches and mm) 1. 2. 3. 4. Gate Collector Emitter Collector Botton Side Dim. Millimeter Min. Max. Inches Min. Max. A A1 4.06 2.03 4.83 2.79 .160 .080 .190 .110 b b2 0.51 1.14 0.99 1.40 .020 .045 .039 .055 c c2 0.46 1.14 0.74 1.40 .018 .045 .029 .055 D D1 8.64 7.11 9.65 8.13 .340 .280 .380 .320 E E1 e 9.65 6.86 2.54 10.29 8.13 BSC .380 .270 .100 .405 .320 BSC L L1 L2 L3 L4 14.61 2.29 1.02 1.27 0 15.88 2.79 1.40 1.78 0.38 .575 .090 .040 .050 0 .625 .110 .055 .070 .015 R 0.46 0.74 .018 .029 IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 6,306,728B1 5,381,025