IXYS IXGH50N60B2

HiPerFASTTM IGBT
B2-Class High Speed IGBTs
Symbol
Test Conditions
VCES
IC25
VCE(sat)
tfi typ
IXGH 50N60B2
IXGT 50N60B2
Maximum Ratings
VCES
TJ = 25°C to 150°C
600
V
VCGR
TJ = 25°C to 150°C; RGE = 1 MΩ
600
V
VGES
Continuous
±20
V
VGEM
Transient
±30
V
IC25
TC = 25°C (limited by leads)
75
A
IC110
TC = 110°C
50
A
ICM
TC = 25°C, 1 ms
200
A
SSOA
(RBSOA)
VGE = 15 V, TVJ = 125°C, RG = 10 Ω
Clamped inductive load @ ≤ 600V
PC
TC = 25°C
ICM = 80
A
400
W
-55 ... +150
°C
TJM
150
°C
Tstg
-55 ... +150
°C
300
°C
TJ
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
TO-247
(IXGH)
C (TAB)
G
Mounting torque (TO-247)
1.13/10Nm/lb.in.
Weight
TO-247 AD
TO-268
6
4
g
g
VGE(th)
IC = 250 µA, VCE = VGE
ICES
VCE = VCES
VGE = 0 V
IGES
VCE = 0 V, VGE = ±20 V
VCE(sat)
IC = 40 A, VGE = 15 V
© 2004 IXYS All rights reserved
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
3.0
TJ = 25°C
TJ = 150°C
TJ = 125°C
1.6
1.5
5.0
V
50
1
µA
mA
±100
nA
2.0
V
V
C (TAB)
E
G = Gate,
E = Emitter,
C = Collector,
TAB = Collector
Features
z
z
High frequency IGBT
High current handling capability
MOS Gate turn-on
- drive simplicity
Applications
z
Test Conditions
E
G
z
Symbol
C
TO-268
(IXGT)
z
Md
= 600 V
= 75 A
= 2.0 V
= 65 ns
z
z
z
z
PFC circuits
Uninterruptible power supplies (UPS)
Switched-mode and resonant-mode
power supplies
AC motor speed control
DC servo and robot drives
DC choppers
Advantages
z
z
High power density
Very fast switching speeds for high
frequency applications
DS99145A(03/04)
IXGH 50N60B2
IXGT 50N60B2
Symbol
gfs
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
IC = 40 A; VCE = 10 V,
Pulse test, t ≤ 300 µs, duty cycle ≤ 2 %
40
S
3500
pF
240
pF
50
pF
140
nC
23
nC
44
nC
∅P
Cies
Coes
55
VCE = 25 V, VGE = 0 V, f = 1 MHz
Cres
Qg
Qge
IC = 40 A, VGE = 15 V, VCE = 0.5 VCES
Qgc
td(on)
tri
td(off)
tfi
18
ns
Inductive load, TJ = 25°°C
25
ns
IC = 40 A, VGE = 15 V
VCE = 480 V, RG = Roff = 5 Ω
190
Eoff
Eon
td(off)
tfi
Inductive load, TJ = 125°°C
IC = 40 A, VGE = 15 V
VCE = 480 V, RG = Roff = 5 Ω
Eoff
ns
ns
0.55
0.85 mJ
18
ns
25
ns
0.45
mJ
290
ns
140
ns
1.55
mJ
RthJC
RthCK
300
65
td(on)
tri
TO-247 AD Outline
e
Dim.
Millimeter
Min. Max.
A
4.7
5.3
2.2
2.54
A1
2.2
2.6
A2
b
1.0
1.4
b1
1.65
2.13
b2
2.87
3.12
C
.4
.8
D
20.80 21.46
E
15.75 16.26
e
5.20
5.72
L
19.81 20.32
L1
4.50
∅P 3.55
3.65
Q
5.89
6.40
R
4.32
5.49
S
6.15 BSC
Inches
Min. Max.
.185 .209
.087 .102
.059 .098
.040 .055
.065 .084
.113 .123
.016 .031
.819 .845
.610 .640
0.205 0.225
.780 .800
.177
.140 .144
0.232 0.252
.170 .216
242 BSC
TO-268 Outline
0.31 K/W
(TO-247)
0.25
K/W
Min. Recommended Footprint
(Dimensions in inches and mm)
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more
of the following U.S. patents:
4,850,072
4,835,592
4,931,844
4,881,106
5,034,796
5,017,508
5,063,307
5,049,961
5,237,481
5,187,117
5,381,025
5,486,715
6,404,065B1
6,306,728B1
6,162,665
6,534,343
6,583,505
6,259,123B1 6,306,728B1 6,683,344
IXGH 50N60B2
IXGT 50N60B2
Fig. 1. Output Characte ristics
@ 25 Deg. C
Fig. 2. Extended Output Characte ristics
@ 25 de g. C
320
80
VGE = 15V
13V
11V
70
9V
60
50
40
30
6V
20
9V
200
160
120
7V
80
10
40
5V
0
5V
0
0.5
1
1.5
2
2.5
3
0
1
2
3
Fig. 3. Output Characteristics
@ 125 Deg. C
VGE = 15V
13V
11V
70
I C - Amperes
7V
50
6V
30
20
10
7
8
V GE = 15V
1.3
40
6
1.4
9V
60
5
Fig. 4. De pende nce of V CE(sat) on
Tem perature
V C E (sat)- Normalized
80
4
V C E - Volts
V C E - Volts
1.2
I C = 80A
1.1
1.0
0.9
I C = 40A
0.8
0.7
5V
0
I C = 20A
0.6
0.5
1
1.5
2
2.5
3
-50
-25
0
V CE - Volts
25
50
75
100
125
150
8
8.5
TJ - Degrees Centigrade
Fig. 5. Collector-to-Em itter Voltage
vs. Gate-to-Em itter voltage
Fig. 6. Input Adm ittance
200
3.7
TJ = 25ºC
3.4
180
160
3.1
I C = 80A
40A
20A
2.8
2.5
I C - Amperes
VC E - Volts
11V
240
7V
I C - Amperes
I C - Amperes
VGE = 15V
13V
280
2.2
140
120
100
80
TJ = 125ºC
25ºC
-40ºC
60
1.9
40
1.6
20
1.3
0
5
6
7
8
9
10 11 12
V G E - Volts
© 2004 IXYS All rights reserved
13 14 15 16 17
4
4.5
5
5.5
6
6.5
V G E - Volts
7
7.5
IXGH 50N60B2
IXGT 50N60B2
Fig. 8. Dependence of Turn-Off
Energy on RG
Fig. 7. Transconductance
80
5
4
50
40
30
3
2.5
1.5
1
10
I C = 20A
0.5
0
0
0
4
20
40
60
80
100 120 140 160 180 200
5
25
30
35
40
45
Fig. 10. Dependence of Turn-Off
Energy on Tem perature
3
1.5
TJ = 25ºC
1
2
1
0
0
50
I C - Amperes
I C = 40A
1.5
0.5
40
I C = 80A
2.5
0.5
30
R G = 5Ω
R G = 24.4Ω - - VGE = 15V
VCE = 480V
3.5
2
20
50
4
TJ = 125ºC
60
70
80
I C = 20A
25
35
45
55
65
75
85
95
105 115 125
TJ - Degrees Centigrade
Fig. 11. Dependence of Turn-Off
Sw itching Tim e on RG
Fig. 12. Dependence of Turn-Off
Sw itching Tim e on IC
400
Switching Time - nanosecond
td(off)
tfi - - - - - TJ = 125ºC
VGE = 15V
VCE = 480V
500
20
Fig. 9. Dependence of Turn-Off
Energy on IC
2.5
1000
15
R G - Ohms
E off - milliJoules
3
10
I C - Amperes
R G = 5Ω
R G = 24.4 Ω - - - VGE = 15V
VCE = 480V
3.5
E off - MilliJoules
I C = 40A
2
20
Switching Time - nanosecond
I C = 80A
3.5
E off - milliJoules
g f s - Siemens
60
TJ = 125ºC
VGE = 15V
VCE = 480V
4.5
TJ = -40ºC
25ºC
125ºC
70
I C = 20A
I C = 40A
I C = 80A
td(off)
tfi - - - - - -
350
R G = 5Ω
VGE = 15V
VCE = 480V
300
250
TJ = 125ºC
200
150
TJ = 25ºC
100
100
50
0
5
10
15
20
25
30
35
40
45
20
50
30
R G - Ohms
40
50
60
70
80
I C - Amperes
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more
of the following U.S. patents:
4,850,072
4,835,592
4,931,844
4,881,106
5,034,796
5,017,508
5,063,307
5,049,961
5,237,481
5,187,117
5,381,025
5,486,715
6,404,065B1
6,306,728B1
6,162,665
6,534,343
6,583,505
6,259,123B1 6,306,728B1 6,683,344
IXGH 50N60B2
IXGT 50N60B2
Fig. 13. De pendence of Turn-Off
Sw itching Tim e on Te m perature
Fig. 14. Reverse -Bias
Safe Operating Are a
90
td(off)
tfi - - - - - -
300
80
R G = 5Ω
VGE = 15V
VCE = 480V
250
70
60
200
I C = 40A
150
I C - Amperes
Switching Time - nanosecond
350
I C = 20A
I C = 80A
100
50
40
TJ = 125º C
30
R G = 10Ω
dV/dT < 10V/ns
20
50
10
0
0
25
35
45
55
65
75
85
95
105 115 125
100
TJ - Degrees Centigrade
200
V
400
CE
- Volts
500
600
Fig. 16. Capacitance
Fig. 15. Gate Charge
10000
16
VCE = 300V
I C = 40A
I G = 10mA
14
f = 1 MHz
Capacitance - p F
12
VG E - Volts
300
10
8
6
C ies
1000
C oes
100
4
C res
2
0
10
0
30
60
90
120
150
0
5
10
Q G - nanoCoulombs
15
20
25
V C E - Volts
30
35
40
Fig. 17. Maxim um Transient Therm al Resistance
0.35
R ( t h ) J C - ºC / W
0.30
0.25
0.20
0.15
0.10
0.05
0.00
1
© 2004 IXYS All rights reserved
10
Pulse Width - milliseconds
100
1000