High Speed IGBT with Diode IXSH 10N60B2D1 IXSQ 10N60B2D1 Short Circuit SOA Capability VCES = 600 V I C25 = 20 A V CE(sat) = 2.5 V Preliminary Data Sheet D1 Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ± 20 V VGEM Transient ± 30 V IC25 TC = 25°C 20 A IC110 TC = 110°C 10 A 11 A 30 A ICM = 20 @ 0.8 VCES A 10 µs IF(110) ICM TC = 25°C, 1 ms SSOA (RBSOA) VGE = 15 V, TJ = 125°C, RG = 82Ω Clamped inductive load, VGE = 20 V tSC (SCSOA) VGE = 15 V, VCE = 360 V, TJ = 125°C RG = 150 Ω, non repetitive PC TC = 25°C W °C 150 °C Tstg -55 ... +150 °C Mounting torque Weight TO-247 TO-3P 1.3/10 Nm/lb. in Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Symbol Test Conditions 5 5 g g 300 °C Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. BVCES IC = 250 µA, VGE = 0 V 600 VGE(th) IC = 750 µA, VCE = VGE 4.0 ICES VCE = VCES VGE = 0 V IGES VCE = 0 V, VGE = ± 20 V VCE(sat) IC = 10A, VGE = 15 V C (TAB) E TO-3P (IXSQ) G (TAB) E 100 -55 ... +150 Md G C TJM TJ TO-247 (IXSH) V 7.0 V 75 200 µA µA ± 100 nA 2.5 V G = Gate E = Emitter C = Collector TAB = Collector Features • International standard package • Guaranteed Short Circuit SOA capability • Low VCE(sat) - for low on-state conduction losses • High current handling capability • MOS Gate turn-on - drive simplicity • Fast fall time for switching speeds up to 20 kHz Applications • AC motor speed control • Uninterruptible power supplies (UPS) • Welding Advantages • High power density DS99236(10/04) © 2004 IXYS All rights reserved IXSH 10N60B2D1 IXSQ 10N60B2D1 Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. gfs IC = 10A; VCE = 10 V, Note 1 2.0 3.6 S 400 pF 50 pF C res 11 pF Qg 17 nC 6 nC 7.5 nC Cies Coes Qge VCE = 25 V, VGE = 0 V f = 1 MHz IC = 10A, VGE = 15 V, VCE = 0.5 VCES Qgc td(on) Inductive load, TJ = 25°°C 30 ns tri 30 ns 180 ns Eoff IC = 10A, VGE = 15 V VCE = 0.8 VCES, RG = 30 Ω Switching times may increase for VCE (Clamp) > 0.8 • VCES, higher TJ or increased RG td(on) Inductive load, TJ = 125°°C 30 ns tri IC = 10 A, VGE = 15 V VCE = 0.8 VCES, RG = 30 Ω Switching times may increase for VCE (Clamp) > 0.8 • VCES, higher TJ or increased RG 30 ns 0.32 260 mJ ns 270 ns 790 µJ td(off) tfi Eon td(off) tfi Eoff 165 430 RthJC µJ 1.25 K/W RthCS 0.25 Reverse Diode (FRED) Symbol ns 750 Test Conditions K/W TO-247 Outline 1 2 3 Terminals: 1 - Gate 3 - Source Dim. Millimeter Min. Max. A 4.7 5.3 A1 2.2 2.54 A2 2.2 2.6 b 1.0 1.4 b1 1.65 2.13 b2 2.87 3.12 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 ∅P 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 S 6.15 BSC IF = 10A, VGE = 0 V TJ =150°C IRM trr IF = 12A, VGE = 0 V, -diF/dt = 100 A/µs VR = 100 V trr IF = 1 A; -di/dt = 100 A/µs; VR = 30 V TO-3P Outline TJ = 100°C TJ = 100°C 1.66 2.66 1.5 90 V V A ns 25 ns 2.5 K/W RthJC Terminals: 1 - Gate 3 - Source Note 1: Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % IXYS reserves the right to change limits, test conditions, and dimensions. 4,835,592 4,850,072 4,881,106 Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 242 BSC Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. VF IXYS MOSFETs and IGBTs are covered by one or moreof the following U.S. patents: 2 - Drain Tab - Drain 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,710,405B2 6,710,463 6,727,585 2 - Drain Tab - Drain IXSH 10N60B2D1 IXSQ 10N60B2D1 Fig. 1. Output Characte ristics @ 25 ºC Fig. 2. Extended Output Characte ristics @ 25 ºC 35 20 VGE = 17V VGE = 17V 18 15V 30 16 I C - Amperes I C - Amperes 15V 25 14 13V 12 10 8 11V 6 20 13V 15 10 11V 4 5 9V 2 9V 0 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 0 1 2 3 V C E - Volts Fig. 3. Output Characteristics @ 125 ºC 5 6 7 8 9 10 Fig. 4. Dependence of V CE(sat) on Tem perature 2.2 20 VGE = 17V 18 VGE = 15V 2.0 VC E (sat)- Normalized 15V 16 I C - Amperes 4 V C E - Volts 14 13V 12 10 8 11V 6 4 I C = 20A 1.8 1.6 1.4 1.2 I C = 10A 1.0 9V I C = 5A 0.8 2 7V 0.6 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 -50 5 -25 V CE - Volts 0 25 50 75 100 125 150 13 14 TJ - Degrees Centigrade Fig. 5. Collector-to-Em itter Voltage vs. Gate-to-Em itter voltage Fig. 6. Input Adm ittance 18 7 TJ = 25ºC 16 6 5 I C - Amperes VC E - Volts 14 I C = 20A 10A 5A 4 3 12 10 8 TJ = 125ºC 6 25ºC 4 2 -40ºC 2 0 1 10 11 12 13 14 15 V G E - Volts 16 17 18 19 6 7 8 9 10 11 V G E - Volts 12 IXSH 10N60B2D1 IXSQ 10N60B2D1 Fig. 8. Dependence of Turn-off Fig. 7. Trans conductance Ene rgy Loss on RG 4.5 2.4 4 2.2 E o f f - milliJoules g f s - Siemens I C = 20A 2 3.5 3 TJ = -40ºC 2.5 25ºC 2 125ºC 1.5 1.8 1.6 TJ = 125ºC 1.4 VGE = 15V 1.2 VCE = 480V I C = 10A 1 0.8 1 0.6 0.5 I C = 5A 0.4 0 0.2 0 2 4 6 8 10 12 14 16 18 0 20 50 100 150 200 250 300 350 400 450 500 I C - Amperes R G - Ohms Fig. 9. Dependence of Turn-Off Fig. 10. De pende nce of Turn-off Ene rgy Loss on Tem pe rature Energy Los s on IC 2.0 1.8 VGE = 15V 1.4 VCE = 480V E o f f - milliJoules E o f f - MilliJoules TJ = 125ºC R G = 30Ω 1.6 1.2 1.0 0.8 0.6 TJ = 25ºC 1.8 R G = 30Ω 1.6 VGE = 15V 1.4 VCE = 480V 1.2 1.0 0.6 0.4 0.2 0.2 0.0 0.0 6 8 10 12 14 16 18 I C = 10A 0.8 0.4 4 I C = 5A 25 20 35 45 I C - Amperes 55 65 75 85 95 105 115 125 TJ - Degrees Centigrade Fig. 11. Dependence of Turn-off Fig. 12. Depe ndence of Turn-off Sw itching Tim e on RG Sw itching Tim e on IC 700 340 650 td(off) 600 tfi - - - - - - 320 550 TJ = 125ºC 500 VGE = 15V 450 VCE = 480V I C = 5A 400 I C = 10A 350 I C = 20A 300 250 200 I C = 5A 150 Switching Time - nanoseconds Switching Time - nanoseconds I C = 20A td(off) 300 tfi - - - - - - 280 TJ = 125ºC 260 R G = 30Ω 240 VGE = 15V 220 VCE = 480V 200 180 TJ = 25ºC 160 140 120 0 50 100 150 200 250 300 350 400 450 500 550 R G - Ohms 4 6 8 10 12 14 I C - Amperes 16 18 20 IXSH 10N60B2D1 IXSQ 10N60B2D1 Fig. 13. Depe nde nce of Turn-off Sw itching Tim e on Tem pe rature Fig. 14. Gate Charge 16 320 td(off) 300 tfi - - - - - - 280 R G = 30Ω 260 VGE = 15V 240 VCE = 480V I C = 20A I C = 10A 12 220 200 I C = 5A 180 I G = 10mA 10 8 6 20A 4 I C = 10A 160 VCE = 300V 14 5A VG E - Volts Switching Time - nanoseconds 340 2 140 120 0 25 35 45 55 65 75 85 95 0 105 115 125 2 4 TJ - Degrees Centigrade 6 8 10 12 14 16 18 Q G - nanoCoulombs Fig. 16. Reve rs e-Bias Safe Operating Are a Fig. 15. Capacitance 1000 22 18 C ies 16 I C - Amperes Capacitance - p F 20 100 C oes 10 C res f = 1 MHz 14 12 10 8 6 TJ = 125ºC 4 R G = 82Ω 2 dV/dT < 10V/ns 0 1 0 5 10 15 20 25 30 35 100 150 40 V C E - Volts 200 250 300 350 400 450 500 550 600 V C E - Volts Fig. 17. Maxim um Trans ient The rm al Res istance 1.4 R ( t h ) J C - ( ºC / W ) 1.2 1 0.8 0.6 0.4 0.2 0 0.1 1 10 Pulse Width - milliseconds 100 1000 IXSH 10N60B2D1 IXSQ 10N60B2D1 30 250 A nC 25 IF = 20 A IF = 5 A 150 6 IF = 10 A TVJ = 100°C 15 IF = 10 A 8 IRM Qr 20 IF = 5 A A VR = 300 V 200 TVJ = 150°C IF 10 TVJ = 100°C IF = 20 A 100 4 50 2 TVJ = 100°C 10 VR = 300 V 5 TVJ = 25°C 0 0 1 2 3 0 100 V 0 A/µs 1000 -diF/dt VF Fig. 18. Forward current IF versus VF Fig. 19. Reverse recovery charge Qr versus -diF/dt 2.0 ns 200 400 600 A/µs 800 1000 -diF/dt Fig. 20. Peak reverse current IRM versus -diF/dt 60 TVJ = 100°C 100 0.3 TVJ = 100°C V µs IF = 10 A VR = 300 V tfr VFR trr 1.5 0 Kf 40 IF = 5 A 80 0.2 IF = 10 A 1.0 IF = 20 A IRM 60 20 tfr VFR 0.5 Qr 40 0.0 0 0 40 0.1 80 120 C 160 0 200 400 600 TVJ 800 1000 A/µs 0 200 400 -diF/dt Fig. 21. Dynamic parameters Qr, IRM versus TVJ Fig. 22. Recovery time trr versus -diF/dt 10 0.0 600 A/µs 800 1000 diF/dt Fig. 23. Peak forward voltage VFR and tfr versus diF/dt Constants for ZthJC calculation: K/W i 1 1 2 3 ZthJC Rthi (K/W) ti (s) 1.449 0.5578 0.4931 0.0052 0.0003 0.0169 0.1 0.01 0.001 0.00001 DSEP 8-06B 0.0001 0.001 0.01 s 0.1 1 t Fig. 24. Transient thermal resistance junction-to-case NOTE: Fig. 19 to Fig. 23 shows typical values IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or moreof the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,306,728 B1 6,534,343 6,259,123 B1 6,404,065 B1 6,583,505 6,683,344 6,710,405B2