HiPerFASTTM IGBTs w/ Diode IXGT40N60C2D1 IXGJ40N60C2D1 IXGH40N60C2D1 VCES IC110 = = VCE(SAT) ≤ tfi(typ) = 600V 40A 2.7V 32ns C2-Class High Speed IGBTs TO-268 (IXGT) G E C (Tab) Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ 600 600 V V VGES VGEM Continuous Transient ±20 ±30 V V IC25 IC110 ICM TC = 25°C ( Limited by Lead) TC = 110°C TC = 25°C, 1ms 75 40 200 A A A SSOA (RBSOA) VGE = 15V, TJ = 125°C, RG = 10Ω Clamped Inductive Load ICM = 80 VCE ≤ VCES A PC TC = 25°C 300 W -55 ... +150 150 -55 ... +150 °C °C °C 300 260 °C °C 1.13/10 Nm/lb.in. 6 4 g g TJ TJM Tstg TL TSOLD 1.6mm (0.062 in.) from Case for 10s Plastic Body for 10 seconds Md Mounting Torque (TO-247) Weight TO-247 TO-268 TO-268 (IXGJ) G C E C (Tab) TO-247 (IXGH) G VGE(th) IC ICES VCE = VCES, VGE= 0V 3.0 5.0 IGES VCE = 0V, VGE = ±20V VCE(sat) IC = 30A, VGE = 15V, Note 1 TJ = 125°C 2.2 1.7 C = Collector Tab = Collector Features z z z V 200 μA 3 mA TJ = 125°C C (Tab) Very High Frequency IGBT Square RBSOA High Current Handling Capability Applications Characteristic Values Min. Typ. Max. = 250μA, VCE = VGE E G = Gate E = Emitter z Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) C ±100 nA 2.7 V V z z z z Uninterruptible Power Supplies (UPS) Switch-Mode and Resonant-Mode Power Supplies AC Motor Speed Control DC Servo and Robot Drives DC Choppers Advantages z High Power Density Very Fast Switching Speeds for High Frequency Applications z High Power Surface Mountable Packages z © 2010 IXYS CORPORATION, All Rights Reserved DS99041F(11/10) IXGT40N60C2D1 IXGJ40N60C2D1 IXGH40N60C2D1 Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. gfs 20 IC = 30A, VCE = 10V, Note 1 Cies Coes Cres Qg Qge Qgc td(on) tri td(off) tfi Eoff td(on) tri Eon td(off) tfi Eoff RthJC RthCS VCE = 25V, VGE = 0V, f = 1MHz IC = 30A, VGE = 15V, VCE = 0.5 • VCES Inductive load, TJ = 25°C IC = 30A, VGE = 15V 36 S 2500 220 54 pF pF pF 95 14 36 nC nC nC 18 20 ns ns 90 32 0.20 VCE = 400V, RG = 3Ω Note 2 Inductive load, TJ = 125°C IC = 30A, VGE = 15V VCE = 400V, RG = 3Ω Note 2 TO-247 & TO-268 TO-247 Outline 140 0.37 ns ns mJ 18 20 0.60 130 80 0.50 ns ns mJ ns ns mJ 0.25 0.42 °C/W °C/W Reverse Diode (FRED) Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. VF IF = 30A, VGE = 0V, Note 1 TJ = 150°C 1.6 IRM trr TJ = 100°C IF = 30A, VGE = 0V, -diF/dt = 100A/μs, VR = 100V TJ = 100°C IF = 1A, VGE = 0V, -diF/dt = 100A/μs, VR = 30V 100 25 RthJC Notes: 1 2 ∅P 3 e 1 = Gate 2 = Collector 3 = Emitter Dim. Millimeter Inches Min. Max. Min. Max. A 4.7 5.3 .185 .209 2.2 2.54 .087 .102 A1 2.2 2.6 .059 .098 A2 b 1.0 1.4 .040 .055 1.65 2.13 .065 .084 b1 b2 2.87 3.12 .113 .123 C .4 .8 .016 .031 D 20.80 21.46 .819 .845 E 15.75 16.26 .610 .640 e 5.20 5.72 0.205 0.225 L 19.81 20.32 .780 .800 L1 4.50 .177 ∅P 3.55 3.65 .140 .144 Q 5.89 6.40 0.232 0.252 R 4.32 5.49 .170 .216 S 6.15 BSC 242 BSC TO-268 Leaded Outline 2.5 V V 4 A ns ns 0.9 °C/W 1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%. 2. Switching times & energy losses may increase for higher VCE(clamp), TJ or RG. 1 = Gate 2,4 = Collector 3 = Emitter TO-268 Outline 1 = Gate 2,4 = Collector 3 = Emitter IXYS Reserves The Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXGT40N60C2D1 IXGJ40N60C2D1 IXGH40N60C2D1 Fig. 1. Output Characteristics @ 25 Deg. C Fig. 2. Extended Output Characteristics @ 25 deg. C 60 210 VG E = 15V 13V 11V 180 9V 150 40 I C - Amperes I C - Amperes 50 VG E = 15V 13V 11V 9V 7V 30 20 120 90 7V 60 10 30 5V 5V 0 0 0.5 1 1.5 2 2.5 3 3.5 0 1 2 3 Fig. 3. Output Characteristics 60 6 7 1.3 VG E = 15V 13V 11V 9V 1.2 40 VC E (sat) - Normalized 50 I C - Amperes 5 Fig. 4. Temperature Dependence of V CE(sat) @ 125 Deg. C 7V 30 20 I C = 60A 1.1 VG E = 15V 1 0.9 I C = 30A 0.8 5V 10 I C = 15A 0.7 0 0.6 0.5 1 1.5 2 2.5 3 25 50 75 100 125 150 TJ - Degrees Centigrade V CE - Volts Fig. 5. Collector-to-Emitter Voltage Fig. 6. Input Admittance vs. Gate-to-Emitter voltage 4 210 T J = 25º C 180 I C - Amperes 3.5 VC E - Volts 4 V C E - Volts V C E - Volts 3 2.5 I C = 60A 2 150 120 90 T J = 125º C 60 30A 25º C 1.5 -40º C 30 15A 1 0 5 6 7 8 9 10 11 V G E - Volts © 2010 IXYS CORPORATION, All Rights Reserved 12 13 14 15 4 5 6 7 V G E - Volts 8 9 10 IXGT40N60C2D1 IXGJ40N60C2D1 IXGH40N60C2D1 Fig. 7. Transconductance Fig. 8. Dependence of Eoff on RG 70 1.8 60 Eoff - milliJoules 125º C 40 30 20 I C = 60A TJ = 125º C VG E = 15V VC E = 400V 1.4 25º C 50 g f s - Siemens 1.6 T J = -40º C 1.2 1 I C = 45A 0.8 0.6 I C = 30A 0.4 10 0.2 0 I C = 15A 0 0 30 60 90 120 150 180 2 4 6 I C - Amperes 1.6 1.6 R G = 3 Ohms R G= 10 Ohms - - - - - Eoff - milliJoules Eoff - MilliJoules T J = 125ºC 0.6 16 I C = 45A 0.8 0.6 0.4 0.2 0.2 T J = 25ºC I C = 60A 1 0.4 I C = 30A I C = 15A 0 0 10 20 30 40 50 25 60 50 I C - Amperes 75 100 125 TJ - Degrees Centigrade Fig. 12. Capacitance Fig. 11. Gate Charge 15 10000 f = 1M Hz Capacitance - p F VC E = 300V I C = 30A I G = 10mA 12 VG E - Volts 14 VG E = 15V VC E = 400V 1.2 1 0.8 12 R G = 3 Ohms R G = 10 Ohms - - - - - 1.4 VG E = 15V VC E = 400V 1.2 10 Fig. 10. Dependence of Eoff on T emperature Fig. 9. Dependence of Eoff on IC 1.4 8 R G - Ohms 9 6 C ies 1000 C oes 100 3 C res 10 0 0 20 40 60 80 100 Q G - nanoCoulombs IXYS Reserves The Right to Change Limits, Test Conditions, and Dimensions. 0 5 10 15 20 25 V C E - Volts 30 35 40 IXGT40N60C2D1 IXGJ40N60C2D1 IXGH40N60C2D1 Fig. 13. Maximum Transient Thermal Impedance Z(th) J C - (ºC/W) 1.00 0.10 0.01 0.0001 0.001 0.01 0.1 Pulse Width - Seconds © 2010 IXYS CORPORATION, All Rights Reserved 1 10 IXGT40N60C2D1 IXGJ40N60C2D1 IXGH40N60C2D1 1000 60 A nC 50 IF 30 TVJ= 100°C VR = 300V 25 800 Qr 30 20 IF= 60A IF= 30A IF= 15A 600 TVJ=100°C 15 400 20 10 TVJ=25°C 200 10 0 IF= 60A IF= 30A IF= 15A IRM 40 TVJ=150°C TVJ= 100°C VR = 300V A 0 1 2 5 0 100 3 V A/μs 1000 -diF/dt VF Fig. 14. Forward current IF versus VF Fig. 15. Reverse recovery charge Qr versus -diF/dt 2.0 90 1.0 400 600 A/μs 800 -diF/dt 1000 1.00 TVJ= 100°C IF = 30A μs tfr 0.75 tfr IF= 60A IF= 30A IF= 15A 80 200 Fig. 16. Peak reverse current IRM versus -diF/dt V V FR 15 trr Kf 0 20 TVJ= 100°C VR = 300V ns 1.5 0 VFR 10 0.50 IRM 70 0.5 0.0 5 Qr 0 40 80 120 °C 160 60 0 200 T VJ 400 600 800 A/μs 1000 0 0.25 0 200 400 -diF/dt Fig. 17. Dynamic parameters Qr, IRM versus TVJ Fig. 18. Recovery time trr versus -diF/dt 0.00 600 A/μs 800 1000 diF/dt Fig. 19. Peak forward voltage VFR and tfr versus diF/dt 1 K/W Constants for ZthJC calculation: i 0.1 Z thJC 1 2 3 Rthi (K/W) ti (s) 0.502 0.193 0.205 0.0052 0.0003 0.0162 0.01 0.001 0.00001 DSEP 29-06 0.0001 0.001 0.01 0.1 t s 1 Fig. 20. Transient thermal resistance junction to case IXYS Reserves The Right to Change Limits, Test Conditions, and Dimensions. IXYS REF: G_40N60C2(5Y)12-11-06-B