High Voltage, Low VCE(sat) IGBT IXSH 45N120 VCES IC25 VCE(sat) Maximum Ratings TO-247 AD = 1200 V = 75 A = 3V Short Circuit SOA Capability Symbol Test Conditions VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 1200 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C, limited by leads 75 A IC90 TC = 90°C 45 A ICM TC = 25°C, 1 ms 180 A SSOA (RBSOA) VGE = 15 V, TJ = 125°C, RG = 2.7 W Clamped inductive load, L = 30 mH ICM = 90 @ 0.8 VCES A tSC (SCSOA) VGE = 15 V, VCE = 0.6 • VCES, TJ = 125°C RG = 22 W, non repetitive 10 ms PC TC = 25°C 300 W -55 ... +150 °C TJM 150 °C Tstg -55 ... +150 °C TJ Md Mounting torque ● ● ● 1.13/10 Nm/lb.in. Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s 6 g 300 °C ● ● Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. IC = 3 mA, VGE = 0 V 1200 VGE(th) IC = 4 mA, VCE = VGE 4 ICES VCE = 0.8 • VCES VGE = 0 V ● ● V 6 8 ● V ● VCE = 0 V, VGE = ±20 V VCE(sat) IC TJ = 25°C TJ = 125°C = IC90, VGE = 15 V IXYS reserves the right to change limits, test conditions, and dimensions. © 2000 IXYS All rights reserved C = Collector, TAB = Collector 400 1.2 mA mA ±100 nA 3 V International standard package JEDEC TO-247 High frequency IGBT with guaranteed Short Circuit SOA capability Fast Fall Time for switching speeds up to 20 kHz 2nd generation HDMOSTM process Low VCE(sat) - for minimum on-state conduction losses MOS Gate turn-on - drive simplicity Applications ● BVCES IGES E G = Gate, E = Emitter, ● Test Conditions C Features Weight Symbol G AC motor speed control DC servo and robot drive Uninterruptible power supplies (UPS) Switch-mode and resonant-mode power supplies Welding Advantages ● ● Easy to mount with 1 screw (isolated mounting screw hole) High power density 92773F (7/00) 1-4 IXSH 45N120 Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. gfs IC = IC90; VCE = 10 V, Pulse test, t £ 300 ms, duty cycle d £ 2 % IC(on) VGE = 15 V, VCE = 10 V C ies S 170 A 4150 pF 285 pF C res 65 pF Qg 150 200 nC 45 60 nC 75 100 nC Coes Qge VCE = 25 V, VGE = 0 V, f = 1 MHz 26 IC = IC90, VGE = 15 V, VCE = 0.5 VCES Qgc td(on) t ri td(off) tfi Eoff Inductive load, TJ = 25°C IC = IC90, VGE = 15 V, L = 100 mH VCE = 0.8 VCES, RG = 2.7 W Remarks: Switching times may increase for VCE (Clamp) > 0.8 • VCES, higher TJ or increased RG 80 ns 250 ns 400 ns 1000 ns 21 mJ 80 TO-247 AD (IXSH) Outline Dim. Millimeter Min. Max. Inches Min. Max. A B 19.81 20.32 20.80 21.46 0.780 0.800 0.819 0.845 C D 15.75 16.26 3.55 3.65 0.610 0.640 0.140 0.144 E F 4.32 5.49 5.4 6.2 0.170 0.216 0.212 0.244 ns G H 1.65 2.13 4.5 0.065 0.084 0.177 1.0 1.4 10.8 11.0 0.040 0.055 0.426 0.433 td(on) Inductive load, TJ = 125°C t ri IC = IC90, VGE = 15 V, L = 100 mH 250 ns J K Eon VCE = 0.8 VCES, RG = 2.7 W 7.1 mJ td(off) L M 4.7 0.4 5.3 0.8 0.185 0.209 0.016 0.031 Remarks: Switching times may increase for VCE (Clamp) > 0.8 • VCES, higher TJ or increased RG N 1.5 2.49 0.087 0.102 tfi Eoff 450 ns 1200 ns 27 mJ RthJC RthCK © 2000 IXYS All rights reserved 0.42 K/W 0.25 K/W IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 2-4 IXSH 45N120 Fig.1 Saturation Characteristics 70 VGE = 15V Fig.2 300 13V TJ = 25°C 11V 60 250 TJ = 25°C VGE = 15V 50 IC - Amperes IC - Amperes Output Characterstics 40 30 20 200 13V 150 100 11V 9V 50 10 9V 7V 0 0 0 1 2 3 4 0 5 2 4 6 Fig.3 Collector-Emitter Voltage vs. Gate-Emitter Voltage Fig.4 Temperature Dependence of Output Saturation Voltage 1.8 TJ = 25°C 9 1.6 VCE(sat) - Normalized 7 VCE - Volts IC = 90A VGE = 15V 8 6 5 4 IC = 90A 3 IC = 45A 2 0 8 9 10 11 12 13 1.4 IC = 45A 1.2 1.0 IC = 22.5A 0.8 IC = 22.5A 1 14 0.6 -50 15 -25 0 VGE - Volts 90 50 TJ = 25°C TJ = 125°C 20 TJ = - 40°C 10 0 4 5 6 7 8 9 10 11 12 13 14 15 VGE - Volts © 2000 IXYS All rights reserved BV / V(th) - Normalized 60 30 75 100 125 150 1.3 70 40 50 Fig.6 Temperature Dependence of Breakdown and Threshold Voltage VCE = 10V 80 25 TJ - Degrees C Fig. 5 Input Admittance IC - Amperes 10 12 14 16 18 20 VCE - Volts VCE - Volts 10 8 1.2 1.1 VGE(th) IC = 4mA 1.0 0.9 BVCES IC = 3mA 0.8 0.7 -50 -25 0 25 50 75 100 125 150 TJ - Degrees C 3-4 IXSH 45N120 Fig.7 Turn-Off Energy per Pulse and Fall Time on Collector Current 2600 40 TJ = 125°C IC = 45A 50 2500 40 tfi 2250 30 2000 20 1750 Eoff - millijoules Eoff 2400 2200 30 Eoff 2000 25 10 1500 0 20 40 60 1800 0 100 80 0 10 20 IC - Amperes Fig.9 15 30 20 50 40 RG - Ohms Gate Charge Characteristic Curve Fig.10 Turn-Off Safe Operating Area 100 IC = 45A VCE = 500V 12 TJ = 125°C 10 IC - Amperes VGE - Volts 35 tfi Eoff - millijoules RG = 10W 2750 tfi - nanoseconds 60 TJ = 125°C tfi - nanoseconds 3000 Fig.8 Dependence of Turn-Off Energy Per Pulse and Fall Time on RG 9 6 RG= 2.7W dV/dt < 6V/ns 1 0.1 3 0 0.01 0 50 100 150 200 0 200 Qg - nanocoulombs 400 600 800 1000 1200 VCE - Volts Fig.11 Transient Thermal Impedance 1 ZthJC (K/W) D=0.5 0.1 D=0.2 D=0.1 D=0.05 D=0.02 D = Duty Cycle 0.01 D=0.01 Single Pulse 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - seconds © 2000 IXYS All rights reserved 4-4