IXYS IXSN80N60AU1

IGBT with Diode
IXSN 80N60AU1
VCES
IC25
VCE(sat)
= 600 V
= 160 A
=
3V
Short Circuit SOA Capability
C
G
E
Symbol
Test Conditions
VCES
TJ = 25°C to 150°C
E
Maximum Ratings
600
TJ = 25°C to 150°C; RGE = 1 MW
600
A
VGES
Continuous
±20
V
VGEM
Transient
±30
V
IC25
TC = 25°C
160
A
IC90
TC = 90°C
80
A
ICM
TC = 25°C, 1 ms
320
A
SSOA
(RBSOA)
VGE = 15 V, TVJ = 125°C, RG = 22 W
Clamped inductive load, L = 30 mH
ICM = 160
@ 0.8 VCES
A
tSC
(SCSOA)
VGE = 15 V, VCE = 360 V, TJ = 125°C
RG = 22 W, non repetitive
10
ms
PC
TC = 25°C
500
W
VISOL
50/60 Hz
IISOL £ 1 mA
2500
3000
V~
V~
-55 ... +150
°C
TJ
TJM
150
°C
Tstg
-55 ... +150
°C
Md
Mounting torque
Terminal connection torque (M4)
1.5/13 Nm/lb.in.
1.5/13 Nm/lb.in.
Weight
Symbol
30
Test Conditions
IC
= 3 mA, VGE = 0 V
600
VGE(th)
IC
= 8 mA, VCE = VGE
4
ICES
VCE = 0.8 • VCES
VGE = 0 V
IGES
VCE = 0 V, VGE = ±20 V
VCE(sat)
IC
TJ = 25°C
TJ = 125°C
= IC90, VGE = 15 V
IXYS reserves the right to change limits, test conditions, and dimensions.
© 2000 IXYS All rights reserved
g
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
BVCES
E153432
V
VCGR
t = 1 min
t=1s
miniBLOC, SOT-227 B
V
8
V
1
15
mA
mA
±100
ns
3
V
E
G
E
C
E = Emitter ,
C = Collector
G = Gate,
E = Emitter 
 Either Emitter terminal can be used as
Main or Kelvin Emitter
Features
l
International standard package
miniBLOC
l
Aluminium-nitride isolation
- high power dissipation
l
Isolation voltage 3000 V~
l
UL registered E 153432
l
Low VCE(sat)
- for minimum on-state conduction
losses
l
Fast Recovery Epitaxial Diode
- short trr and IRM
l
Low collector-to-case capacitance
(< 60 pF)
- reduced RFI
l
Low package inductance (< 10 nH)
- easy to drive and to protect
Applications
l
AC motor speed control
l
DC servo and robot drives
l
DC choppers
l
Uninterruptible power supplies (UPS)
l
Switch-mode and resonant-mode
power supplies
Advantages
Space savings
l
Easy to mount with 2 screws
l
High power density
l
94552E(7/00)
1-4
IXSN80N60AU1
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
gfs
IC = 60 A; VCE = 10 V,
Pulse test, t £ 300 ms, duty cycle d £ 2 %
C ies
S
8500
pF
650
pF
C res
120
pF
Qg
335
nC
88
nC
158
nC
Inductive load, TJ = 25°C
140
ns
IC = IC90, VGE = 15 V, L = 100 mH,
VCE = 0.8 VCES, RG = 2.7 W
220
ns
Coes
Qge
VCE = 25 V, VGE = 0 V, f = 1 MHz
46
IC = IC90, VGE = 15 V, VCE = 0.5 VCES
Qgc
td(on)
t ri
td(off)
tfi
Eoff
td(on)
t ri
Eon
td(off)
tfi
Eoff
Remarks: Switching times may increase
for VCE (Clamp) > 0.8 • VCES, higher TJ or
increased RG
Inductive load, TJ = 125°C
IC = IC90, VGE = 15 V, L = 100 mH
VCE = 0.8 VCES, RG = 2.7 W
Remarks: Switching times may increase
for VCE (Clamp) > 0.8 • VCES, higher TJ or
increased RG
300
600
ns
450
600
ns
miniBLOC, SOT-227 B
M4 screws (4x) supplied
Dim.
Millimeter
Min.
Max.
Inches
Min.
Max.
A
B
31.50
7.80
31.88
8.20
1.240
0.307
1.255
0.323
C
D
4.09
4.09
4.29
4.29
0.161
0.161
0.169
0.169
E
F
4.09
14.91
4.29
15.11
0.161
0.587
0.169
0.595
G
H
30.12
38.00
30.30
38.23
1.186
1.496
1.193
1.505
J
K
11.68
8.92
12.22
9.60
0.460
0.351
0.481
0.378
L
M
0.76
12.60
0.84
12.85
0.030
0.496
0.033
0.506
N
O
25.15
1.98
25.42
2.13
0.990
0.078
1.001
0.084
10
mJ
140
ns
220
ns
8
mJ
P
Q
4.95
26.54
5.97
26.90
0.195
1.045
0.235
1.059
520
ns
R
S
3.94
4.72
4.42
4.85
0.155
0.186
0.174
0.191
550
ns
T
U
24.59
-0.05
25.07
0.1
0.968
-0.002
0.987
0.004
13
mJ
RthJC
0.25 K/W
RthCK
0.05
Reverse Diode (FRED)
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
Symbol
Test Conditions
VF
IF = 50 A, VGE = 0 V,
Pulse test, t £ 300 ms, duty cycle d £ 2 %
IRM
t rr
IF = 50 A, VGE = 0 V, -diF/dt = 480 A/ms
VR = 360 V
TJ = 125°C
IF = 1 A; -di/dt = 200 A/ms; VR = 30 V TJ = 25°C
RthJC
© 2000 IXYS All rights reserved
K/W
19
175
35
1.8
V
50
A
ns
ns
0.80 K/W
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592
4,881,106
5,017,508
5,049,961
5,187,117
5,486,715
4,850,072
4,931,844
5,034,796
5,063,307
5,237,481
5,381,025
2-4
IXSN80N60AU1
Fig.1 Saturation Characteristics
160
400
13V
VGE = 15V
TJ = 25°C
Fig.2 Output Characterstics
VGE = 15V
320
120
11V
Ic - Amperes
IC - Amperes
TJ=25OC
360
140
100
80
60
40
9V
280
13V
240
200
160
11V
120
80
20
9V
40
7V
7V
0
0
0
1
2
3
4
5
0
2
4
6
VCE - Volts
10
10 12 14 16 18 20
VCE - Volts
Fig.3 Collector-Emitter Voltage
vs. Gate-Emitter Voltage
Fig.4 Temperature Dependence
of Output Saturation Voltage
1.5
TJ = 25°C
9
IC = 160A
VGE = 15V
1.4
VCE(sat) - Normalized
8
7
Vce - Volts
8
6
5
IC = 160A
4
IC = 80A
3
2
IC = 40A
1
9
10
1.2
1.1
IC = 80A
1.0
0.9
IC = 40A
0.8
0
8
1.3
11
12
13
14
0.7
-50
15
-25
0
VGE - Volts
25
50
75
100 125 150
TJ - Degrees C
Fig.5 Input Admittance
Fig.6 Temperature Dependence of
Breakdown and Threshold Voltage
1.3
160
VCE = 10V
BV / VGE(th) - Normalized
140
IC - Amperes
120
100
80
60
TJ = 25°C
40
TJ = 125°C
TJ = - 40°C
20
0
4
5
6
7
8
9
VGE - Volts
© 2000 IXYS All rights reserved
10
11
12
13
1.2
BVCES
IC = 3mA
1.1
1.0
0.9
VGE(th)
0.8
0.7
-50
IC = 8mA
-25
0
25
50
75
100 125 150
TJ - Degrees C
3-4
IXSN80N60AU1
Fig.7 Turn-Off Energy per Pulse and
Fall Time on Collector Current
1000
Fig.8 Dependence of Turn-Off Energy
Per Pulse and Fall Time on RG
24
1000
20
TJ = 125°C
RG = 10W
600
12
tfi
400
6
200
0
0
20
40
60
80
tfi - nanoseconds
18
Eoff
IC = 80A
800
Eoff - millijoules
tfi - nanoseconds
800
16
Eoff
600
12
400
8
tfi
200
0
100 120 140 160
Eoff - millijoules
TJ = 125°C
4
0
0
10
20
IC - Amperes
30
40
0
50
RG - Ohms
Fig.9 Gate Charge Characteristic Curve
Fig.10 Turn-Off Safe Operating Area
1000
15
IC = 80A
VCE = 480A
100
TJ = 125°C
IC - Amperes
VGE - Volts
12
9
6
RG = 22W
10
dV/dt < 6V/ns
1
0.1
3
0.01
0
0
100
200
300
400
500
0
Qg - nCoulombs
100
200
300
400
500
600
700
VCE - Volts
Fig.11 Transient Thermal Impedance
Thermal Response - K/W
1
Diode
0.1
IGBT
Single Pulse
0.01
0.001
0.0001
0.001
0.01
0.1
1
Time - Seconds
© 2000 IXYS All rights reserved
4-4