HiPerFASTTM IGBT LightspeedTM Series IXGH 32N60C IXGT 32N60C Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 600 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C 60 A IC110 TC = 110°C ICM TC = 25°C, 1 ms SSOA (RBSOA) VGE = 15 V, TVJ = 125°C, RG = 10 W Clamped inductive load, L = 100 mH PC TC = 25°C 32 A 120 A ICM = 64 @ 0.8 VCES A 200 W -55 ... +150 °C TJM 150 °C Tstg -55 ... +150 °C 300 °C TJ Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Md Mounting torque (M3) TO-247 AD TO-268 6 4 g g = 600 V = 60 A = 2.1 V = 55 ns TO-268 (IXGT) G E C (TAB) TO-247 AD (IXGH) C (TAB) G 1.13/10 Nm/lb.in. Weight VCES IC25 VCE(sat)typ tfi typ G = Gate, E = Emitter, C E C = Collector, TAB = Collector Features • International standard packages JEDEC TO-247 and surface mountable TO-268 • High current handling capability • Latest generation HDMOSTM process • MOS Gate turn-on - drive simplicity Applications Symbol Test Conditions BVCES IC = 250 mA, VGE = 0 V 600 VGE(th) IC = 250 mA, VCE = VGE 2.5 ICES VCE = 0.8 • VCES VGE = 0 V IGES VCE = 0 V, VGE = ±20 V VCE(sat) IC Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. TJ = 25°C TJ = 150°C = IC110, VGE = 15 V IXYS reserves the right to change limits, test conditions, and dimensions. © 2000 IXYS All rights reserved V 2.1 5 V 200 1 mA mA ±100 nA 2.5 V • PFC circuits • Uninterruptible power supplies (UPS) • Switched-mode and resonant-mode power supplies • AC motor speed control • DC servo and robot drives • DC choppers Advantages • High power density • Very fast switching speeds for high frequency applications 97538B (7/00) 1-4 IXGH 32N60C IXGT 32N60C Symbol gfs Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. IC = IC110; VCE = 10 V, Pulse test, t £ 300 ms, duty cycle £ 2 % C ies S 2700 pF 190 pF C res 50 pF Qg 110 nC 22 nC 40 nC Coes Qge VCE = 25 V, VGE = 0 V, f = 1 MHz 25 IC = IC110, VGE = 15 V, VCE = 0.5 VCES Qgc TO-247 AD (IXGH) Outline td(on) Inductive load, TJ = 25°C 25 ns t ri IC = IC110, VGE = 15 V, L = 100 mH, VCE = 0.8 VCES, RG = Roff = 4.7 W 20 ns 85 ns Remarks: Switching times may increase for VCE (Clamp) > 0.8 • VCES, higher TJ or increased RG A B 19.81 20.32 20.80 21.46 0.780 0.800 0.819 0.845 55 ns 0.32 mJ C D 15.75 16.26 3.55 3.65 0.610 0.640 0.140 0.144 ns E F 4.32 5.49 5.4 6.2 0.170 0.216 0.212 0.244 G H 1.65 2.13 4.5 0.065 0.084 0.177 J K 1.0 1.4 10.8 11.0 0.040 0.055 0.426 0.433 td(off) tfi Eoff td(on) Inductive load, TJ = 150°C 25 t ri IC = IC110, VGE = 15 V, L = 100 mH 25 ns Eon VCE = 0.8 VCES, RG = Roff = 4.7 W 0.30 mJ td(off) tfi Eoff Remarks: Switching times may increase for VCE (Clamp) > 0.8 • VCES, higher TJ or increased RG Inches Min. Max. 110 170 ns 105 160 ns L M 4.7 0.4 5.3 0.8 0.185 0.209 0.016 0.031 0.85 1.25 mJ N 1.5 2.49 0.087 0.102 RthJC RthCK Dim. Millimeter Min. Max. 0.62 K/W (IXGH32N60C) TO-268AA (D3 PAK) 0.25 Dim. A A1 A2 b b2 C D E E1 e H L L1 L2 L3 L4 © 2000 IXYS All rights reserved Millimeter Min. Max. 4.9 5.1 2.7 2.9 .02 .25 1.15 1.45 1.9 2.1 .4 .65 13.80 14.00 15.85 16.05 13.3 13.6 5.45 BSC 18.70 19.10 2.40 2.70 1.20 1.40 1.00 1.15 0.25 BSC 3.80 4.10 Inches Min. Max. .193 .201 .106 .114 .001 .010 .045 .057 .75 .83 .016 .026 .543 .551 .624 .632 .524 .535 .215 BSC .736 .752 .094 .106 .047 .055 .039 .045 .010 BSC .150 .161 K/W Min. Recommended Footprint IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 2-4 IXGH 32N60C IXGT 32N60C 200 100 VGE = 15V 13V TJ = 25°C TJ = 25°C 9V 11V VGE = 15V IC - Amperes IC - Amperes 13V 160 80 60 40 7V 11V 120 9V 80 7V 40 20 5V 5V 0 0 0 1 2 3 4 0 5 2 4 8 10 VCE - Volts VCE - Volts Fig. 2. Extended Output Characteristics Fig. 1. Output Characteristics 100 1.50 11V TJ = 125°C VGE = 15V VGE = 15V VCE (sat) - Normalized 9V 13V 80 IC - Amperes 6 60 7V 40 20 IC = 64A 1.25 IC = 32A 1.00 IC = 16A 0.75 5V 0 0 1 2 3 4 0.50 5 25 50 75 VCE - Volts 100 125 150 TJ - Degrees C Fig. 3. High Temperature Output Characteristics Fig. 4. Temperature Dependence of VCE(sat) 100 10000 VCE = 10V f = 1Mhz Ciss Capacitance - pF IC - Amperes 80 60 40 TJ = 125°C 1000 Coss Crss 100 20 TJ = 25°C 0 10 3 4 5 6 7 8 VGE - Volts Fig. 5. Admittance Curves © 2000 IXYS All rights reserved 9 10 0 5 10 15 20 25 30 35 40 VCE-Volts Fig. 6. Capacitance Curves 3-4 IXGH 32N60C IXGT 32N60C TJ = 125°C 8 TJ = 125°C 2 0.50 1 0.25 IC = 64A 3 E(OFF) 2 4 E(ON) 20 40 60 IC = 16A E(OFF) 0 0 80 10 20 30 40 50 60 RG - Ohms IC - Amperes Fig. 7. Dependence of EON and EOFF on IC. Fig. 8. Dependence of EON and EOFF on RG. 16 100 64 IC = 32A VCE = 300V IC - Amperes 12 VGE - Volts 2 0 0 0 E(OFF) IC = 32A 1 E(ON) 0.00 6 E(ON) 8 TJ = 125°C 10 RG = 4.7 dV/dt < 5V/ns 1 4 0.1 0 0 25 50 75 100 125 0 100 200 300 400 500 600 VCE - Volts Qg - nanocoulombs Fig. 10. Turn-off Safe Operating Area Fig. 9. Gate Charge 1 D=0.5 ZthJC (K/W) D=0.2 0.1 D=0.1 D=0.05 D=0.02 0.01 D=0.01 D = Duty Cycle Single pulse 0.001 0.00001 0.0001 0.001 0.01 0.1 1 Pulse Width - Seconds Fig. 11. Transient Thermal Resistance © 2000 IXYS All rights reserved E(OFF) - millijoules E(ON) E(OFF) - milliJoules 3 0.75 E(ON) - millijoules E(OFF) RG = 10 E(ON) - millijoules 4 4 1.00 4-4