HiPerFASTTM IGBT with Diode Lightspeed Series IXGH 24N60CD1 VCES = 600 V = 48 A IXGT 24N60CD1 IC25 VCE(sat) = 2.5 V Preliminary data Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 600 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C 48 A IC110 TC = 110°C 24 A ICM TC = 25°C, 1 ms 80 A SSOA (RBSOA) VGE = 15 V, TVJ = 125°C, RG = 22 W Clamped inductive load, L = 100 mH PC TC = 25°C ICM = 48 @ 0.8 VCES A 150 W -55 ... +150 °C TJM 150 °C Tstg -55 ... +150 °C 300 °C TJ Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Md Mounting torque (M3) Symbol TO-247 TO-268 Test Conditions g g Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. BVCES IC = 750 mA, VGE = 0 V 600 VGE(th) IC = 250 mA, VCE = VGE 2.5 ICES VCE = 0.8 • VCES VGE = 0 V IGES VCE = 0 V, VGE = ±20 V VCE(sat) IC V TJ = 25°C TJ = 150°C = IC110, VGE = 15 V IXYS reserves the right to change limits, test conditions, and dimensions. © 2000 IXYS All rights reserved 6 4 2.1 G E 5.5 V 200 3 mA mA ±100 nA 2.5 V C (TAB) TO-247 AD (IXGH) C (TAB) G 1.13/10 Nm/lb.in. Weight TO-268 (IXGT) G = Gate, E = Emitter, C E C = Collector, TAB = Collector Features • International standard packages JEDEC TO-247 and surface mountable TO-268 • High frequency IGBT • High current handling capability • Latest generation HDMOSTM process • MOS Gate turn-on - drive simplicity • Fast recovery expitaxial Diode (FRED) - soft recovery with low IRM Applications • PFC circuits • Uninterruptible power supplies (UPS) • Switched-mode and resonant-mode power supplies • AC motor speed control • DC servo and robot drives • DC choppers Advantages • High power density • Very fast switching speeds for high frequency applications 98603A (4/99) 1-5 IXGH 24N60CD1 IXGT 24N60CD1 Symbol gfs Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. IC = IC110; VCE = 10 V, Pulse test, t £ 300 ms, duty cycle £ 2 % 9 C ies S 1500 pF 170 pF C res 40 pF Qg 55 nC 13 nC 17 nC Coes Qge VCE = 25 V, VGE = 0 V, f = 1 MHz 17 IC = IC110, VGE = 15 V, VCE = 0.5 VCES Qgc TO-247 AD (IXGH) Outline td(on) Inductive load, TJ = 25°C 15 ns Dim. Millimeter Min. Max. t ri IC = IC110, VGE = 15 V, L = 100 mH, VCE = 0.8 VCES, RG = Roff = 10 W 25 ns A B 19.81 20.32 20.80 21.46 0.780 0.800 0.819 0.845 75 140 ns 60 110 ns C D 15.75 16.26 3.55 3.65 0.610 0.640 0.140 0.144 Eoff Remarks: Switching times may increase for VCE (Clamp) > 0.8 • VCES, higher TJ or increased RG 0.24 0.36 mJ E F 4.32 5.49 5.4 6.2 0.170 0.216 0.212 0.244 td(on) Inductive load, TJ = 125°C 15 ns G H 1.65 2.13 4.5 0.065 0.084 0.177 t ri IC = IC110, VGE = 15 V, L = 100 mH 25 ns VCE = 0.8 VCES, RG = Roff = 10 W 1 mJ J K 1.0 1.4 10.8 11.0 0.040 0.055 0.426 0.433 130 ns L M 4.7 0.4 5.3 0.8 0.185 0.209 0.016 0.031 110 ns N 1.5 2.49 0.087 0.102 0.6 mJ td(off) tfi Eon td(off) tfi Eoff Remarks: Switching times may increase for VCE (Clamp) > 0.8 • VCES, higher TJ or increased RG RthJC RthCK 0.83 K/W (TO-247) Reverse Diode (FRED) Symbol Test Conditions 0.25 IF = IC110, VGE = 0 V, TJ = 150°C Pulse test, t £ 300 ms, duty cycle d £ 2 % TJ = 25°C IRM t rr IF = IC110, VGE = 0 V, -diF/dt = 100 A/ms VR = 100 V IF = 1 A; -di/dt = 100 A/ms; VR = 30 V K/W TJ = 100°C TJ = 25°C 1.6 2.5 6 100 25 V V A ns ns 0.9 K/W Min. Recommended Footprint © 2000 IXYS All rights reserved TO-268AA (D3 PAK) Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. VF RthJC Inches Min. Max. Dim. A A1 A2 b b2 C D E E1 e H L L1 L2 L3 L4 Millimeter Min. Max. 4.9 5.1 2.7 2.9 .02 .25 1.15 1.45 1.9 2.1 .4 .65 13.80 14.00 15.85 16.05 13.3 13.6 5.45 BSC 18.70 19.10 2.40 2.70 1.20 1.40 1.00 1.15 0.25 BSC 3.80 4.10 IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 Inches Min. Max. .193 .201 .106 .114 .001 .010 .045 .057 .75 .83 .016 .026 .543 .551 .624 .632 .524 .535 .215 BSC .736 .752 .094 .106 .047 .055 .039 .045 .010 BSC .150 .161 2-5 IXGH 24N60CD1 IXGT 24N60CD1 200 50 TJ = 25°C 11V VGE = 15V 13V 160 40 13V IC - Amperes IC - Amperes VGE = 15V TJ = 25°C 9V 30 20 7V 120 11V 80 9V 40 10 7V 0 0 0 1 2 3 4 0 5 4 8 16 20 VCE - Volts VCE - Volts Fig. 1 Saturation Voltage Characteristics Fig. 2 Extended Output Characteristics 1.4 TJ = 125°C VGE = 15V 13V 11V 9V VCE (sat) - Normalized 50 40 IC - Amperes 12 30 7V 20 10 IC = 48A VGE = 15V 1.2 IC = 24A 1.0 IC = 12A 0.8 5V 0.6 0 0 1 2 3 4 25 5 50 75 VCE - Volts 100 125 150 TJ - Degrees C Fig.4 Fig. 3 Saturation Voltage Characteristics Temperature Dependence of VCE(sat) 50 f = 1Mhz VCE = 10V Capacitance - pF IC - Amperes 40 30 TJ = 125°C 20 TJ = 25°C 1000 Ciss Coss 100 10 Crss 10 0 2 3 4 5 6 7 VGE - Volts Fig. 5 Admittance Curves © 2000 IXYS All rights reserved 8 9 10 0 5 10 15 20 25 30 35 40 VCE-Volts Fig. 6 Temperature Dependence of VF & VF 3-5 IXGH 24N60CD1 IXGT 24N60CD1 1.00 2.0 2.0 2.0 TJ = 125°C TJ = 125°C 0.50 1.0 E(OFF) 0.25 0.5 E(ON) - millijoules E(ON) E(OFF) 1.5 E(ON) 1.0 1.0 IC = 24A E(ON) 0.5 IC = 12A 0 10 20 30 40 0.0 50 0.5 E(OFF) E(ON) 0.00 1.5 IC =48A E(OFF) 0.0 0.0 0 IC - Amperes E(OFF) - millijoules 1.5 E(OFF) - milliJoules E(ON) - millijoules RG = 10W 0.75 10 20 30 40 50 60 RG - Ohms Fig.8. Dependence of EOFF on RG Fig.7. Dependence of EOFF and EOFF on IC 16 100 VCE = 300V IC = 24A 40 IC - Amperes VGE - Volts 12 8 10 TJ = -55 to +125°C RG = 4.7W dV/dt < 5V/ns 1 4 0 0.1 0 20 40 60 80 0 Qg - nanocoulombs 100 200 300 400 500 600 VCE - Volts Fig.9. Gate Charge Fig.10. Turn-off Safe Operating Area 1 D=0.5 ZthJC (K/W) D=0.2 0.1 D=0.1 D=0.05 D=0.02 0.01 D=0.01 Single pulse D = Duty Cycle 0.001 0.00001 0.0001 0.001 0.01 0.1 1 Pulse Width - Seconds Fig. 11 IGBT Transient Thermal Resistance © 2000 IXYS All rights reserved 4-5 IXGH 24N60CD1 IXGT 24N60CD1 60 A 1000 nC 50 IF TVJ= 100°C VR = 300V A 25 800 Qr 600 IF= 60A IF= 30A IF= 15A IRM IF= 60A IF= 30A IF= 15A 40 TVJ=150°C 30 TVJ= 100°C VR = 300V 20 30 15 TVJ=100°C 400 20 10 TVJ=25°C 200 10 0 0 1 2 5 0 100 3 V A/ms 1000 -diF/dt VF Fig. 12 Forward current IF versus VF Fig. 13 Reverse recovery charge Qr versus -diF/dt 2.0 90 200 ms 1000 600 A/ 800 -diF/dt 400 Fig. 14 Peak reverse current IRM versus -diF/dt 1.00 TVJ= 100°C IF = 30A V VFR 15 trr Kf 0 20 TVJ= 100°C VR = 300V ns 1.5 0 µs tfr 0.75 V FR tfr 80 IF= 60A IF= 30A IF= 15A 1.0 I RM 10 0.50 5 0.25 70 0.5 Qr 0.0 60 0 40 80 120 °C 160 0 TVJ 200 400 800 A/ ms 1000 600 0 0 200 400 -diF/dt Fig. 15 Dynamic parameters Qr, and IRM versus TVJ temperature Fig. 16 Recovery time trr versus -diF/dt 1 K/W 0.00 ms 1000 600 A/ 800 diF/dt Fig. 17 Peak forward voltage VFR and tfr versus diF/dt Constants for ZthJC calculation: i 1 2 3 0.1 ZthJC Rthi (K/W) ti (s) 0.502 0.193 0.205 0.0052 0.0003 0.0162 0.01 0.001 0.00001 DSEP 29-06 0.0001 0.001 0.01 s 0.1 1 t Fig. 18 Transient thermal resistance junction to case © 2000 IXYS All rights reserved 5-5