MCC 162 MCD 162 ITRMS = 2x 300 A ITAVM = 2x 190 A VRRM = 800-1800 V Thyristor Modules Thyristor/Diode Modules VRSM VRRM VDSM VDRM V V 900 1300 1500 1700 1900 800 1200 1400 1600 1800 Version 1 Version 1 MCC 162-08io1 MCC 162-12io1 MCC 162-14io1 MCC 162-16io1 MCC 162-18io1 MCD 162-08io1 MCD 162-12io1 MCD 162-14io1 MCD 162-16io1 MCD 162-18io1 Test Conditions ITRMS, IFRMS ITAVM, IFAVM TVJ = TVJM TC = 80°C; 180° sine TC = 85°C; 180° sine ITSM, IFSM TVJ = 45°C; VR = 0 (di/dt)cr (dv/dt)cr PGM 2 Maximum Ratings 300 190 181 A A A t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 6000 6400 A A TVJ = TVJM VR = 0 t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 5250 5600 A A TVJ = 45°C VR = 0 t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 180 000 170 000 A2s A2s TVJ = TVJM VR = 0 t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 137 000 128 000 A2s A2s 150 A/ms TVJ = TVJM repetitive, IT = 500 A f =50 Hz, tP =200 ms VD = 2/3 VDRM IG = 0.5 A non repetitive, IT = 500 A diG/dt = 0.5 A/ms TVJ = TVJM; VDR = 2/3 VDRM RGK = ¥; method 1 (linear voltage rise) TVJ = TVJM IT = ITAVM 4 3 6 7 1 5 4 2 3 1 5 4 2 MCC MCD Features International standard package Direct copper bonded Al2O3 -ceramic base plate Planar passivated chips Isolation voltage 3600 V~ UL registered, E 72873 Keyed gate/cathode twin pins ● ● ● ● 500 A/ms 1000 V/ms ● ● Applications Motor control Power converter Heat and temperature control for industrial furnaces and chemical processes Lighting control Contactless switches ● tP = 30 ms tP = 500 ms PGAV 120 60 8 W W W VRGM 10 V TVJ TVJM Tstg -40...+125 125 -40...+125 °C °C °C 3000 3600 V~ V~ VISOL 5 1 Symbol òi2dt 6 7 3 Type ● ● ● ● 50/60 Hz, RMS IISOL £ 1 mA t = 1 min t=1s Md Mounting torque (M6) Terminal connection torque (M6) Weight Typical including screws 2.25-2.75/20-25 Nm/lb.in. 4.5-5.5/40-48 Nm/lb.in. 125 Advantages Space and weight savings Simple mounting Improved temperature and power cycling Reduced protection circuits ● ● ● ● g Data according to IEC 60747 and refer to a single thyristor/diode unless otherwise stated. IXYS reserves the right to change limits, test conditions and dimensions © 2000 IXYS All rights reserved 1-4 MCC 162 MCD 162 Symbol Test Conditions IRRM, IDRM TVJ = TVJM; VR = VRRM; VD = VDRM VT, VF IT, IF = 300 A; TVJ = 25°C 1.25 V VT0 rT For power-loss calculations only (TVJ = 125°C) 0.88 1.15 V mW VGT VD = 6 V; IGT VD = 6 V; TVJ = 25°C TVJ = -40°C TVJ = 25°C TVJ = -40°C 2.5 2.6 150 200 V V mA mA VGD IGD TVJ = TVJM; VD = 2/3 VDRM 0.2 10 V mA IL TVJ = 25°C; tP = 30 ms; VD = 6 V IG = 0.5 A; diG/dt = 0.5 A/ms 300 mA IH TVJ = 25°C; VD = 6 V; RGK = ¥ 200 mA tgd TVJ = 25°C; VD = 1/2 VDRM IG = 0.5 A; diG/dt = 0.5 A/ms 2 ms tq TVJ = TVJM; IT = 300 A, tP = 200 ms; -di/dt = 10 A/ms typ. VR = 100 V; dv/dt = 20 V/ms; VD = 2/3 VDRM 150 ms QS IRM TVJ = TVJM; IT, IF = 300 A, -di/dt = 50 A/ms 550 235 mC A RthJC per per per per RthJK dS dA a Characteristic Values thyristor/diode; DC current module thyristor/diode; DC current module 10 other values see Fig. 8/9 Creepage distance on surface Strike distance through air Maximum allowable acceleration mA 0.155 0.0775 0.225 0.1125 K/W K/W K/W K/W 12.7 9.6 50 mm mm m/s2 Fig. 1 Gate trigger characteristics Optional accessories for modules Keyed gate/cathode twin plugs with wire length = 350 mm, gate = yellow, cathode = red Type ZY 180L (L = Left for pin pair 4/5) UL 758, style 1385, Type ZY 180R (R = right for pin pair 6/7) CSA class 5851, guide 460-1-1 Fig. 2 Gate trigger delay time Dimensions in mm (1 mm = 0.0394") MCC Version 1 © 2000 IXYS All rights reserved MCD Version 1 2-4 MCC 162 MCD 162 Fig. 3 Surge overload current ITSM, IFSM: Crest value, t: duration Fig. 4 òi2dt versus time (1-10 ms) Fig. 4a Maximum forward current at case temperature Fig. 5 Power dissipation versus onstate current and ambient temperature (per thyristor or diode) Fig. 6 Three phase rectifier bridge: Power dissipation versus direct output current and ambient temperature © 2000 IXYS All rights reserved 3-4 MCC 162 MCD 162 Fig. 7 Three phase AC-controller: Power dissipation versus RMS output current and ambient temperature Fig. 8 Transient thermal impedance junction to case (per thyristor or diode) RthJC for various conduction angles d: d DC 180° 120° 60° 30° RthJC (K/W) 0.155 0.167 0.176 0.197 0.227 Constants for ZthJC calculation: i 1 2 3 Rthi (K/W) ti (s) 0.0072 0.0188 0.129 0.001 0.08 0.2 Fig. 9 Transient thermal impedance junction to heatsink (per thyristor or diode) RthJK for various conduction angles d: d DC 180° 120° 60° 30° RthJK (K/W) 0.225 0.237 0.246 0.267 0.297 Constants for ZthJK calculation: i 1 2 3 4 © 2000 IXYS All rights reserved Rthi (K/W) ti (s) 0.0072 0.0188 0.129 0.07 0.001 0.08 0.2 1.0 4-4