Thyristor Modules Thyristor/Diode Modules PSKT 310 PSKH 310 Preliminary Data Sheet ITRMS ITAVM VRRM = 2x 500 A = 2x 320 A = 800-1800 V 3 VRSM VRRM VDSM VDRM V V 900 1300 1500 1700 1900 800 1200 1400 1600 1800 Type Version 1 PSKT 310/08io1 PSKT 310/12io1 PSKT 310/14io1 PSKT 310/16io1 PSKT 310/18io1 PSKH 310/08io1 PSKH 310/12io1 PSKH 310/14io1 PSKH 310/16io1 PSKH 310/18io1 Test Conditions ITRMS, IFRMS ITAVM, IFAVM TVJ = TVJM TC = 85°C; 180° sine ITSM, IFSM TVJ = 45°C; VR = 0 (di/dt)cr (dv/dt)cr Maximum Ratings 500 320 A A t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 9200 9800 A A TVJ = TVJM VR = 0 t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 8000 8600 A A TVJ = 45°C VR = 0 t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 420 000 400 000 A 2s A 2s TVJ = TVJM VR = 0 t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 320 000 306 000 A 2s A 2s TVJ = TVJM repetitive, IT = 960 A f =50 Hz, tP =200 µs VD = 2/3 VDRM IG = 1 A non repetitive, IT = 320 A diG/dt = 1 A/µs TVJ = TVJM; VDR = 2/3 VDRM RGK = ∞; method 1 (linear voltage rise) 500 A/µs 1000 V/µs V TVJ TVJM Tstg -40...+140 140 -40...+125 °C °C °C 3000 3600 V~ V~ Mounting torque (M5) Terminal connection torque (M8) Weight Typical including screws 5 4 2 3 1 5 42 Features ● ● ● ● International standard package Direct copper bonded Al2O3 -ceramic base plate Planar passivated chips Isolation voltage 3600 V~ UL registered, E 148688 Keyed gate/cathode twin pins Applications 10 Md 6 7 1 PSKH ● VRGM t = 1 min t=1s 3 5 4 PSKT ● PGAV 50/60 Hz, RMS IISOL ≤ 1 mA tP = 30 µs tP = 500 µs A/µs W W W VISOL TVJ = TVJM IT = ITAVM 100 120 60 20 PGM 7 6 1 Version 1 Symbol ∫i2dt 2 2.5-5/22-44 Nm/lb.in. 12-15/106-132 Nm/lb.in. 320 g ● ● ● ● ● Motor control Power converter Heat and temperature control for industrial furnaces and chemical processes Lighting control Contactless switches Advantages ● ● ● ● Space and weight savings Simple mounting with two screws Improved temperature and power cycling capability Reduced protection circuits Data according to IEC 60747 and refer to a single thyristor/diode unless otherwise stated. 2002 POWERSEM reserves the right to change limits, test conditions and dimensions POWERSEM GmbH, Walpersdorfer Str. 53 D - 91126 Schwabach Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20 Symbol Test Conditions IRRM IDRM TVJ = TVJM; VR = VRRM; VD = VDRM VT, VF IT, IF = 600 A; TVJ = 25°C 1.32 V VT0 rT For power-loss calculations only (TVJ = 140°C) 0.8 0.82 V mΩ VGT VD = 6 V; IGT VD = 6 V; 2 3 150 200 V V mA mA VGD IGD TVJ = TVJM; VD = 2/3 VDRM 0.25 10 V mA IL TVJ = 25°C; tP = 30 µs; VD = 6 V IG = 0.45 A; diG/dt = 0.45 A/µs 200 mA IH TVJ = 25°C; VD = 6 V; RGK = ∞ 150 mA tgd TVJ = 25°C; VD = 1/2 VDRM IG = 1 A; diG/dt = 1 A/µs 2 µs tq TVJ = TVJM; IT = 300 A, tP = 200 µs; -di/dt = 10 A/µs VR = 100 V; dv/dt = 50 V/µs; VD = 2/3 VDRM typ. 200 µs QS IRM TVJ = 125°C; IT, IF = 400 A, -di/dt = 50 A/µs 760 275 µC A RthJC per per per per 0.112 0.056 0.152 0.076 K/W K/W K/W K/W 12.7 9.6 50 mm mm m/s 2 RthJK Characteristic Values TVJ TVJ TVJ TVJ = = = = 25°C -40°C 25°C -40°C thyristor/diode; DC current module thyristor/diode; DC current module Creepage distance on surface Strike distance through air Maximum allowable acceleration dS dA a 70 40 other values see Fig. 8/9 mA mA Fig. 1 Gate trigger characteristics Optional accessories for modules Keyed gate/cathode twin plugs with wire length = 350 mm, gate = yellow, cathode = red Type ZY 180L (L = Left for pin pair 4/5) UL 758, style 1385, Type ZY 180R (R = right for pin pair 6/7) CSA class 5851, guide 460-1-1 Fig. 2 Gate trigger delay time Dimensions in mm (1 mm = 0.0394") PSKT PSKH Threaded spacer for higher Anode/ Cathode construction: Type ZY 250, material brass 20 12 14 2002 POWERSEM reserves the right to change limits, test conditions and dimensions POWERSEM GmbH, Walpersdorfer Str. 53 D - 91126 Schwabach Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20 Fig. 3 Surge overload current ITSM, IFSM: Crest value, t: duration Fig. 4 ∫i2dt versus time (1-10 ms) Fig. 4a Maximum forward current at case temperature Fig. 5 Power dissipation versus onstate current and ambient temperature (per thyristor or diode) Fig. 6 Three phase rectifier bridge: Power dissipation versus direct output current and ambient temperature Circuit B6 3xPSKT 310 or 3xPSKH 310 POWERSEM GmbH, Walpersdorfer Str. 53 2002 POWERSEM reserves the right to change limits, test conditions and dimensions D - 91126 Schwabach Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20 Fig. 7 Three phase AC-controller: Power dissipation versus RMS output current and ambient temperature Circuit W3 3xPSKT 310 or 3xPSKH 310 0.15 Fig. 8 Transient thermal impedance junction to case (per thyristor or diode) K/W ZthJC 30° DC RthJC for various conduction angles d: 0.10 0.05 d RthJC (K/W) DC 180°C 120°C 60°C 30°C 0.112 0.113 0.114 0.115 0.115 Constants for ZthJC calculation: i 0.000 10-3 10-2 10-1 100 101 102 s t 0.20 1 2 3 Rthi (K/W) ti (s) 0.003 0.0143 0.0947 0.099 0.168 0.456 Fig. 9 Transient thermal impedance junction to heatsink (per thyristor or diode) K/W ZthJK 30° DC 0.15 RthJK for various conduction angles d: 0.10 d RthJK (K/W) DC 180°C 120°C 60°C 30°C 0.152 0.154 0.154 0.155 0.155 0.05 Constants for ZthJK calculation: i 0 0.00 10-3 10-2 10-1 100 101 s t 102 1 2 3 4 Rthi (K/W) ti (s) 0.003 0.0143 0.0947 0.04 0.099 0.168 0.456 1.36 POWERSEM GmbH, Walpersdorfer Str. 53 2002 POWERSEM reserves the right to change limits, test conditions and dimensions D - 91126 Schwabach Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20