ETC STT320GK12

STT320
Thyristor-Thyristor Modules
Dimensions in mm (1mm=0.0394")
Type
STT320GK08
STT320GK12
STT320GK14
STT320GK16
STT320GK18
Symbol
VRSM
VDSM
V
900
1300
1500
1700
1900
Test Conditions
ITRMS, IFRMS TVJ=TVJM
ITAVM, IFAVM TC=85oC; 180o sine
VRRM
VDRM
V
800
1200
1400
1600
1800
Maximum Ratings
Unit
500
320
A
ITSM, IFSM
TVJ=45oC
VR=0
TVJ=TVJM
VR=0
t=10ms (50Hz), sine
t=8.3ms (60Hz), sine
t=10ms(50Hz), sine
t=8.3ms(60Hz), sine
9200
9800
8000
8600
A
2
TVJ=45oC
VR=0
TVJ=TVJM
VR=0
t=10ms (50Hz), sine
t=8.3ms (60Hz), sine
t=10ms(50Hz), sine
t=8.3ms(60Hz), sine
420000
400000
320000
306000
A2s
TVJ=TVJM
f=50Hz, tp=200us
VD=2/3VDRM
IG=1A
diG/dt=1A/us
repetitive, IT=960A
100
non repetitive, IT=320A
500
i dt
(di/dt)cr
A/us
TVJ=TVJM;
VDR=2/3VDRM
RGK= ; method 1 (linear voltage rise)
1000
V/us
TVJ=TVJM
IT=ITAVM
120
60
W
PGAV
20
W
VRGM
10
V
TVJ
TVJM
Tstg
-40...+140
140
-40...+125
(dv/dt)cr
PGM
VISOL
Md
Weight
50/60Hz, RMS
_
IISOL<1mA
tp=30us
tp=500us
t=1min
t=1s
Mounting torque (M5)
Terminal connection torque (M8)
Typical including screws
o
C
3000
3600
V~
2.5-5/22-44
12-15/106-132
Nm/lb.in.
320
g
STT320
Thyristor-Thyristor Modules
Symbol
IRRM
Test Conditions
TVJ=TVJM; VR=VRRM; VD=VDRM
IDRM
VT, VF
VTO
IT, IF=600A; TVJ=25oC
o
For power-loss calculations only (TVJ=140 C)
IGT
VGD
Unit
70
mA
40
mA
1.32
V
0.8
V
0.82
rT
VGT
Characteristic Values
o
m
VD=6V;
TVJ=25 C
TVJ=-40oC
2
3
V
VD=6V;
TVJ=25oC
TVJ=-40oC
150
200
mA
TVJ=TVJM;
VD=2/3VDRM
0.25
V
10
mA
IGD
o
IL
TVJ=25 C; tp=30us; VD=6V
IG=0.45A; diG/dt=0.45A/us
200
mA
IH
TVJ=25oC; VD=6V; RGK=
150
mA
2
us
200
us
760
uC
275
A
o
tgd
TVJ=25 C; VD=1/2VDRM
IG=1A; diG/dt=1A/us
tq
TVJ=TVJM; IT=300A; tp=200us; -di/dt=10A/us
VR=100V; dv/dt=50V/us; VD=2/3VDRM
QS
TVJ=125oC; IT, IF=400A; -di/dt=50A/us
typ.
IRM
RthJC
per thyristor/diode; DC current
per module
0.112
0.056
K/W
RthJK
per thyristor/diode; DC current
per module
0.152
0.076
K/W
dS
Creeping distance on surface
12.7
mm
dA
Strike distance through air
9.6
mm
a
Maximum allowable acceleration
50
m/s2
FEATURES
APPLICATIONS
ADVANTAGES
* International standard package
* Direct copper bonded Al2O3-ceramic
base plate
* Planar passivated chips
* Isolation voltage 3600 V~
* Motor control
* Power converter
* Heat and temperature control for
industrial furnaces and chemical
processes
* Lighting control
* Contactless switches
* Space and weight savings
* Simple mounting
* Improved temperature and power
cycling
* Reduced protection circuits
STT320
Thyristor-Thyristor Modules
Fig. 1 Surge overload current
ITSM, IFSM: Crest value, t: duration
Fig. 2 i2t versus time (1-10 ms)
Fig. 3 Power dissipation versus on-state current and ambient temperature
(per thyristor or diode)
Fig. 2a Maximum forward current
at case temperature
Fig. 4 Gate trigger characteristics
3 x STT320
Fig. 5 Three phase rectifier bridge: Power dissipation versus direct output current
and ambient temperature
Fig. 6 Gate trigger delay time
STT320
Thyristor-Thyristor Modules
Fig. 7 Three phase AC-controller:
Power dissipation versus RMS
output current and ambient
temperature
3 x STT320
0.15
Fig. 8 Transient thermal impedance
junction to case (per thyristor or
diode)
K/W
ZthJC
30°
DC
RthJC for various conduction angles d:
0.10
0.05
d
RthJC (K/W)
DC
180oC
120oC
60oC
30oC
0.112
0.113
0.114
0.115
0.115
Constants for ZthJC calculation:
i
0.000
10-3
10-2
10-1
100
101
102
s
t
0.20
1
2
3
Rthi (K/W)
ti (s)
0.003
0.0143
0.0947
0.099
0.168
0.456
Fig. 9 Transient thermal impedance
junction to heatsink (per thyristor
or diode)
K/W
ZthJK
30°
DC
0.15
RthJK for various conduction angles d:
0.10
d
RthJK (K/W)
DC
180oC
120oC
60oC
30oC
0.152
0.154
0.154
0.155
0.155
0.05
Constants for ZthJK calculation:
i
0
0.00
10-3
10-2
10-1
100
101
s
t
102
1
2
3
4
Rthi (K/W)
ti (s)
0.003
0.0143
0.0947
0.04
0.099
0.168
0.456
1.36