MCC 26 MCD 26 Thyristor Modules Thyristor/Diode Modules ITRMS = 2x50 A ITAVM = 2x32 A VRRM = 800-1600 V VRSM VRRM TO-240 AA VDSM VDRM V V 900 1300 1500 1700 800 1200 1400 1600 Type 6 3 2 1 Version MCC MCC MCC MCC 26-08 26-12 26-14 26-16 1B io1 B / io1 B / io1 B / io1 B / 8B io8 B io8 B io8 B io8 B Version MCD MCD MCD MCD 1B 26-08 26-12 26-14 26-16 7 4 5 8B io1 B / io8 B io1 B / io8 B io1 B / io8 B io1 B / io8 B 3 6 7 1 5 4 2 3 1 5 4 2 1 5 2 1 5 2 MCC Version 1 B Symbol Conditions ITRMS, IFRMS ITAVM, IFAVM TVJ = TVJM TC = 75°C; 180° sine TC = 85°C; 180° sine ITSM, IFSM TVJ = 45°C; VR = 0 ∫i2dt (di/dt)cr Maximum Ratings 50 32 27 A A A t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 520 560 A A TVJ = TVJM VR = 0 t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 460 500 A A TVJ = 45°C VR = 0 t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 1350 1300 A2s A2s TVJ = TVJM VR = 0 t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 1050 1030 A2s A2s TVJ = TVJM repetitive, IT = 45 A f =50 Hz, tP = 200 µs VD = 2/3 VDRM IG = 0.45 A non repetitive, IT = ITAVM diG/dt = 0.45 A/µs 150 A/µs (dv/dt)cr TVJ = TVJM; VDR = 2/3 VDRM RGK = ∞; method 1 (linear voltage rise) PGM TVJ = TVJM IT = ITAVM MCD Version 1 B 3 6 MCC Version 8 B 3 MCD Version 8 B Features 500 A/µs 1000 V/µs tP = 30 µs tP = 300 µs PGAV 10 5 W W 0.5 W • International standard package, JEDEC TO-240 AA • Direct copper bonded Al2O3 -ceramic base plate • Planar passivated chips • Isolation voltage 3600 V~ • UL registered, E 72873 • Gate-cathode twin pins for version 1B VRGM 10 V Applications TVJ TVJM Tstg -40...+125 125 -40...+125 °C °C °C • DC motor control • Softstart AC motor controller • Light, heat and temperature control 3000 3600 V~ V~ Advantages VISOL 50/60 Hz, RMS IISOL ≤ 1 mA t = 1 min t=1s Md Mounting torque (M5) Terminal connection torque (M5) Weight Typical including screws 2.5-4.0/22-35 Nm/lb.in. 2.5-4.0/22-35 Nm/lb.in. 90 g • Space and weight savings • Simple mounting with two screws • Improved temperature and power cycling • Reduced protection circuits IXYS reserves the right to change limits, test conditions and dimensions © 2004 IXYS All rights reserved 419 Data according to IEC 60747 and refer to a single thyristor/diode unless otherwise stated. 1-4 MCC 26 MCD 26 Symbol Conditions IRRM, IDRM TVJ = TVJM; VR = VRRM; VD = VDRM Characteristic Values VT, VF IT, IF = 80 A; TVJ = 25°C 1.64 V VT0 rT For power-loss calculations only (TVJ = 125°C) 0.85 11.0 V mΩ VGT VD = 6 V; IGT VD = 6 V; 25°C -40°C 25°C -40°C 1.5 1.6 100 200 V V mA mA VD = 2/3 VDRM 0.2 10 V mA TVJ TVJ TVJ TVJ = = = = 3 TVJ = TVJM; IL TVJ = 25°C; tP = 10 µs; VD = 6 V IG = 0.45 A; diG/dt = 0.45 A/µs 450 mA IH TVJ = 25°C; VD = 6 V; RGK = ∞ 200 mA tgd TVJ = 25°C; VD = 1/2 VDRM IG = 0.45 A; diG/dt = 0.45 A/µs 2 µs tq TVJ = TVJM; IT = 20 A, tP = 200 µs; -di/dt = 10 A/µs VR = 100 V; dv/dt = 20 V/µs; VD = 2/3 VDRM 150 µs QS IRM TVJ = TVJM; IT, IF = 25 A, -di/dt = 0.64 A/µs 50 6 µC A RthJC per per per per 0.88 0.44 1.08 0.54 K/W K/W K/W K/W 12.7 9.6 50 mm mm m/s2 dS dA a 1: IGT, TVJ = 125°C V 2: IGT, TVJ = 25°C 3: IGT, TVJ = -40°C VG 3 2 1 5 6 1 4 VGD IGD RthJK 10 mA thyristor/diode; DC current module thyristor/diode; DC current module other values see Fig. 8/9 Creepage distance on surface Strike distance through air Maximum allowable acceleration typ. Optional accessories for module-type MCC 26 version 1 B Keyed gate/cathode twin plugs with wire length = 350 mm, gate = yellow, cathode = red Type ZY 200L (L = Left for pin pair 4/5) UL 758, style 1385, Type ZY 200R (R = right for pin pair 6/7) CSA class 5851, guide 460-1-1 4: PGAV = 0.5 W 5: PGM = IGD, TVJ = 125°C 0.1 100 101 5W 6: PGM = 10 W 102 103 IG mA 104 Fig. 1 Gate trigger characteristics 1000 TVJ = 25°C µs tgd typ. 100 Limit 10 1 10 mA 100 1000 IG Fig. 2 Gate trigger delay time Dimensions in mm (1 mm = 0.0394") MCC Version 8 B IXYS reserves the right to change limits, test conditions and dimensions 2-4 MCD Version 8 B 419 MCC Version 1 B © 2004 IXYS All rights reserved MCC 26 MCD 26 Fig. 3 Surge overload current ITSM, IFSM: Crest value, t: duration Fig. 4 ∫i2dt versus time (1-10 ms) Fig. 4a Maximum forward current at case temperature Fig. 5 Power dissipation versus on-state current and ambient temperature (per thyristor or diode) IXYS reserves the right to change limits, test conditions and dimensions © 2004 IXYS All rights reserved 419 Fig. 6 Three phase rectifier bridge: Power dissipation versus direct output current and ambient temperature 3-4 MCC 26 MCD 26 Fig. 7 Three phase AC-controller: Power dissipation versus RMS output current and ambient temperature Fig. 8 Transient thermal impedance junction to case (per thyristor or diode) RthJC for various conduction angles d: RthJC (K/W) d DC 180° 120° 60° 30° 0.88 0.92 0.95 0.98 1.01 Constants for ZthJC calculation: i 1 2 3 Rthi (K/W) ti (s) 0.019 0.029 0.832 0.0031 0.0216 0.191 Fig. 9 Transient thermal impedance junction to heatsink (per thyristor or diode) RthJK for various conduction angles d: RthJK (K/W) d DC 180° 120° 60° 30° 1.08 1.12 1.15 1.18 1.21 Constants for ZthJK calculation: IXYS reserves the right to change limits, test conditions and dimensions 4-4 Rthi (K/W) ti (s) 0.019 0.029 0.832 0.2 0.0031 0.0216 0.191 0.45 419 i 1 2 3 4 © 2004 IXYS All rights reserved