MUBW 30-12 A6
Converter - Brake - Inverter Module (CBI1)
Rectifier
Brake
VRRM = 1600V
IFAVM = 25 A
IFSM = 370 A
VCES = 1200 V
IC25 = 18 A
VCE(sat) = 2.6 V
Inverter
VCES = 1200 V
IC25 = 31 A
VCE(sat) = 2.2 V
Features
Input Rectifier Bridge D8 - D13
●
Symbol
Conditions
Maximum Ratings
VRRM
1600
V
IF
TVJ = 25°C
55
A
IFAVM
TVJ = 150°C; TK = 70°C
25
A
IFSM
TVJ = 45°C; t = 10 ms sine 50 Hz
370
A
i²t
TVJ = 125°C
680
A²s
+150
°C
●
●
●
TVJ
●
●
NPT IGBT technology
Square RBSOA, no latchup
Free wheeling diodes with Hiperfast
and soft recovery behaviour
Isolation voltage 2500 V~
Built in temperature sense
High level of integration:
one module for complete drive
system
Direct Copper Bonded Al2O3 ceramic
base plate
Applications
Conditions
IR
VRRM = 1200 V; TVJ = 25°C
TVJ = 125°C
VF
IF = 55 A
RthJC
per die
Characteristic Values
(TVJ = 25°C, unless otherwise specified)
min.
typ. max.
1.2
20
2
µA
mA
1.46
V
●
AC motor control
●
AC servo and robot drives
Advantages
●
●
●
1.05
°C/W
●
IXYS reserves the right to change limits, test conditions and dimensions.
© 2000 IXYS All rights reserved
No need of external isolation
Easy to mount with two screws
Package designed for wave
soldering
High temperature and power cycling
capability
031
Symbol
1-8
MUBW 30-12 A6
Output Inverter T1 - T6, D1 - D6
Symbol
Conditions
Maximum Ratings
VCES
TVJ = 25°C
1200
V
VCGR
TVJ = 25°C; RGE = 20kW
1200
V
VGE
TVJ = 25°C
±20
V
IC
TC = 25°C
TC = 90°C
31
17
A
A
ICM
tp = 1 ms = 1% duty cycle;
62
34
A
A
tSC
VCE = 600 V; TVJ = 125°C
non-repetitive
10
µs
104
W
+150
+150
°C
°C
TC = 25°C
TC = 90°C
Ptot
TC = 25°C
TVJ
TVJ
Free-Wheeling Diode
IGBT
Symbol
Conditions
ICES
VGE = 0 V; VCE = 1200 V
IGES
VCE = 0 V; VGE = 25 V
VGE(th)
VGE = VCE; IC = 0.35 mA
V(BR)CES
VGE = 0 V; IC = 10 mA; TVJ = -55°C
VCEsat
VGE = 15 V; IC = 15 A; TVJ = 25°C
TVJ = 150°C
tf
tr
td(on)
td(off)
Eoff
Eon
Ciss
Coss
Crss
Characteristic Values
(TVJ = 25°C, unless otherwise specified)
min.
typ. max.
Inductive load, TVJ = 125°C
VCC = 600 V; IC = 17.5 A
RG = 100 W; VGE = ±15 V
VGE = 0 V
VCE = 25 V
f = 1 MHz
600
4.5
1000
µA
100
nA
6.5
V
1200
V
2.2
2.5
2.6
3.0
V
V
150
70
ns
ns
80
580
ns
ns
1.2
3.0
mJ
mJ
1000
200
80
pF
pF
pF
gfs
VCE = 20 V; IC = 1.5 A
tbd
S
Qg
VCC = 800 V; IC = 6 A pulse; VGE = 15 V
108
nC
VF
IF = 12 A; VGE = 0 V; TVJ = 25°C
TVJ = 100°C
2.2
1.8
trr
IF = 12 A; VGE = 0 V; TVJ = 100°C
VR = -500 V; diF/dt = -1000 A/µs
80
ns
Qr
IF = 12 A; VGE = 0 V; TVJ = 100°C
VR = -500 VdiF/dt = -1000 A/µs
2.2
µC
Ir
RthJC
2.75
250
IGBT
Diode
(per die)
(per die)
© 2000 IXYS All rights reserved
1.0
1.5
V
V
µA
°C/W
°C/W
2-8
MUBW 30-12 A6
Brake Chopper T7, D7
Symbol
Conditions
VCES
TVJ = 25°C
1200
V
VCGR
TVJ = 25°C; RGE = 20kW
1200
V
VGE
TVJ = 25°C
±20
V
IC
TC = 25°C
TC = 90°C
18
11.5
A
A
ICM
tp = 1 ms = 1% duty cycle;
36
23
A
A
tSC
VCE = 600 V; TVJ = 125°C
non-repetitive
10
µs
Ptot
TC = 25°C
70
W
TVJ
TVJ
Free-Wheeling Diode
IGBT
+150
+150
°C
°C
Symbol
Conditions
ICES
VGE = 0 V; VCE = 1000 V
500
µA
IGES
VCE = 0 V; VGE = 25 V
100
nA
VGE(th)
VGE = VCE; IC = 0.35 mA
6.5
V
V(BR)CES
VGE = 0 V; IC = 10 mA; TVJ = -40°C
VCEsat
VGE = 15 V; IC = 10 A; TVJ = 25°C
TVJ = 150°C
tf
tr
td(on)
td(off)
Eoff
Eon
Ciss
Coss
Crss
Maximum Ratings
TC = 25°C
TC = 90°C
Characteristic Values
(TVJ = 25°C, unless otherwise specified)
min.
typ. max.
4.5
5.5
1200
V
2.9
3.4
V
V
350
40
ns
ns
Inductive load, TVJ = 125°C
VCC = 600 V; IC = 8 A
RG = 100 W; VGE = ±15 V
80
420
ns
ns
0.9
1.3
mJ
mJ
VGE = 0 V
VCE = 25 V
f = 1 MHz
850
98
60
nF
nF
nF
gfs
VCE = 20 V; IC = 1.5 A
1.7
Qg
VCC = 1000 V; IC = 8 A pulse; VGE = 15 V
58
VF
IF = 4 A; VGE = 0 V;
2.3
2
trr
IF = 4 A; VGE = 0 V; TVJ = 100°C
VR = -300 V; diF/dt = -800 A/µs
55
ns
Qr
IF = 4 A; VGE = 0 V; TVJ = 100°C
VR = -300 V; diF/dt = -800 A/µs
0.8
µC
TVJ = 25°C
TVJ = 100°C
S
Ir
RthJC
nC
3
250
IGBT
Diode
(per die)
(per die)
© 2000 IXYS All rights reserved
1.5
2.25
V
V
µA
°C/W
°C/W
3-8
MUBW 30-12 A6
Module
Symbol
Conditions
Maximum Ratings
Tstg
VISOL
IISOL £ 1 mA; 50/60 Hz; t = 1 min
Md
Mounting torque (M4)
dS
dA
Creepage distance on surface
Strike distance in air
Weight
typ.
-40...+125
°C
2500
V~
2.0 - 2.2
18 - 20
Nm
lb.in.
12.7
12.7
mm
mm
42
g
Temperature Sensor R
Symbol
Conditions
R
Tamb = 20°C
Maximum Ratings
4.7
kW
For additional data see C620/4.7k 5% S+M NTC thermistor catalog
3.4 ± 0.1
21.1 ± 0.5
17.1 ± 0.3
5.7 ± 0.3
Dimensions in mm (1 mm = 0.0394")
57.3-0.3
2
+0.
5.5
4.3+
© 2000 IXYS All rights reserved
0.2
4-8
MUBW 30-12 A6
Input Rectifier Bridge D8 - D13
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Forward characteristics
W
I2t versus time (1-10 ms)
Surge overload current
IFSM: crest value, t: duration
10
(ZthJH is measured using 50 µm
thermal grease)
1
0.1
D=0
D = 0.005
D = 0.01
D = 0.02
D = 0.05
D = 0.1
D = 0.2
D = 0.5
0.00001
0.0001
0.001
0.01
0.1
1
10
ZthJH[K/W]
0.01
0.001
0.0001
100
t (s)
Transient thermal resistance junction to heatsink
© 2000 IXYS All rights reserved
5-8
MUBW 30-12 A6
Output Inverter T1 - T6
Reverse biased safe operating area
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2.5
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2.0
ICpuls / IC
1.5
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1.0
G
0.5
TVJ = 150°C
VGE = 15 V
DEF
0.0
0
8FH9
400
800
VCE
1200 V
Short circuit safe operating area
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10
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di/dt =
200 A/µs
600 A/µs
1000A/µs
ICsc / IC
G9
6
H
J9
K9
L9
4
M9
G
N9
TVJ = 150°C
2 V = ±15 V
GE
Tsc £ 10 µs
L < 50 nH
F
DE
0
0
8FH9
Typ. gate charge
400
800
VCE
1200 V
Typ. capacitances
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&RVVQ)
&UVVQ)
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Q
&
4J Q &E © 2000 IXYS All rights reserved
8FH9
6-8
MUBW 30-12 A6
Output Inverter T1 - T6
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7\SVZLWFKLQJWLPHV
V
Q
W
V
Q
W
WGRI I WI RI I WGRQ
WURQ
WGRI I RG = 150 W
VCE = 600 V
TVJ = 125°C
WI RI I IC
= 15 A
VCE = 600 V
TVJ = 125°C
WGRQ
WURQ
5J2KP
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(RI I &
(RI I &
(RQ&
(RI I &
IC
= 15 A
VCE = 600 V
(RQ&
(RQ&
(RI I &
RG = 150 W
VCE = 600 V
(RQ&
V
V
:
P
(
:
P
(
,$
5J2KP
Transient thermal resistance junction to heatsink
(ZthJH is measured using 50 µm
thermal grease)
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' ' ' ' ' © 2000 IXYS All rights reserved
WV
7-8
MUBW 30-12 A6
Output Inverter D1 - D6
70
A
5
mC
60
Qr
IF 50
60
TVJ= 100°C
VR = 600V
TVJ= 100°C
VR = 600V
A
50
4
IRM
40
TVJ=150°C
40 TVJ=100°C
TVJ= 25°C
30
3
IF= 60A
IF= 30A
IF= 15A
2
IF= 60A
IF= 30A
IF= 15A
30
20
20
1
10
10
0
0
1
2
3
V
0
100
4
VF
Forward current IF versus VF
0
A/ms 1000
-diF/dt
0
220
VFR
trr
Kf
tfr
0.8
VFR
IF= 60A
IF= 30A
IF= 15A
1.0
160
ms
tfr
80
180
IRM
1.2
TVJ= 100°C
IF = 30A
V
200
1.5
ms 1000
600 A/
800
-diF/dt
120
TVJ= 100°C
VR = 600V
ns
400
Peak reverse current IRM
versus -diF/dt
Reverse recovery charge Qr
versus -diF/dt
2.0
200
40
0.4
0.5
140
Qr
23-12
0.0
120
0
40
80
120 °C 160
0
200
400
TVJ
600
800
A/
ms 1000
0
0
200
400
-diF/dt
Dynamic parameters Qr, IRM
versus TVJ
Recovery time trr versus -diF/dt
0.0
ms 1000
600 A/
800
diF/dt
Peak forward voltage VFR and tfr
versus diF/dt
(ZthJH is measured using 50 µm
thermal grease)
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Transient thermal resistance junction to heatsink
© 2000 IXYS All rights reserved
8-8