MUBW 15-12A6K Converter - Brake - Inverter Module (CBI1) NPT IGBT Three Phase Rectifier Brake Chopper Three Phase Inverter V RRM = 1600V IDAVM25 = 130 A I FSM = 300 A VCES = 1200 V IC25 = 19 A VCE(sat) = 2.9 V VCES = 1200 V IC25 = 19 A VCE(sat) = 2.9 V Application: AC motor drives with Symbol Conditions Maximum Ratings VRRM 1600 V 31 89 320 A A A 80 W IFAV IDAVM IFSM TC = 80°C; sine 180° bridge output current; TC = 80°C; rectangular; d = 1/3 TVJ = 25°C; t = 10 ms; sine 50 Hz Ptot TC = 25°C Symbol Conditions VF IF = 30 A; TVJ = 25°C TVJ = 125°C 1.0 1.1 IR VR = VRRM; TVJ = 25°C TVJ = 125°C 0.4 0.02 mA mA 0.45 1.4 K/W K/W RthJC RthCH Characteristic Values (TVJ = 25°C, unless otherwise specified) min. typ. max. (per diode) IXYS reserves the right to change limits, test conditions and dimensions. © 2005 IXYS All rights reserved 1.35 V V • • • • • Input from single or three phase grid Three phase synchronous or asynchronous motor electric braking operation UL registered E72873 Features • High level of integration - only one power semiconductor module required for the whole drive • Inverter with NPT IGBTs - low saturation voltage - positive temperature coefficient - fast switching - short tail current • Epitaxial free wheeling diodes with Hiperfast and soft reverse recovery • Industry standard package with insulated copper base plate and soldering pins for PCB mounting • Temperature sense included 513 Input Rectifier Bridge D8 - D13 1-8 MUBW 15-12A6K Output Inverter T1 - T6 Symbol Conditions VCES TVJ = 25°C to 150°C VGES Equivalent Circuits for Simulation Maximum Ratings Conduction 1200 V Continuous ± 20 V VGEM Transient ± 30 V IC25 IC80 TC = 25°C TC = 80°C 19 13 A A RBSOA VGE = ±15 V; RG = 82 Ω; TVJ = 125°C Clamped inductive load; L = 100 µH ICM = 26 VCEK ≤ VCES A tSC (SCSOA) VCE = 720 V; VGE = ±15 V; RG = 82 Ω; TVJ = 125°C non-repetitive 10 µs IGBT (typ. at VGE = 15 V; TJ = 125°C) V0 = 1.50 V; R0 = 120 mΩ Ptot TC = 25°C 90 W Free Wheeling Diode (typ. at TJ = 125°C) V0 = 1.46 V; R0 = 31 mΩ Symbol Conditions IC = 15 A; VGE = 15 V; TVJ = 25°C TVJ = 125°C VGE(th) IC = 0.35 mA; VGE = VCE ICES VCE = VCES; VGE = 0 V; TVJ = 25°C TVJ = 125°C IGES 3.0 3.5 4.5 Inductive load, TVJ = 125°C VCE = 600 V; IC = 10 A VGE = ±15 V; RG = 82 Ω Cies QGon VCE = 25 V; VGE = 0 V; f = 1 MHz VCE = 600V; VGE = 15 V; IC = 10 A RthJC RthCH (per IGBT) 3.4 V V 6.5 V 0.6 mA mA 100 nA 1.3 VCE = 0 V; VGE = ± 20 V td(on) tr td(off) tf Eon Eoff T1 - T6 / D1 - D6 Characteristic Values = 25°C, unless otherwise specified) min. typ. max. VCE(sat) Conditions IF25 IF80 TC = 25°C TC = 80°C Symbol Conditions VF IF = 30 A; VGE = 0 V; TVJ = 25°C TVJ = 125°C IRM t rr IF = 15 A; diF /dt = -400A/µs; TVJ = 125°C VR = 600 V; VGE = 0 V RthJC RthCH (per diode) © 2005 IXYS All rights reserved T7 / D7 IGBT (typ. at VGE = 15 V; TJ = 125°C) V0 = 1.50 V; R0 = 120 mΩ Free Wheeling Diode (typ. at TJ = 125°C) V0 = 1.46 V; R0 = 63 mΩ Thermal Response 50 40 290 60 1.2 1.1 ns ns ns ns mJ mJ D8 - D13 600 45 pF nC Rectifier Diode (typ.) Cth1 = 0.037 J/K; Rth1 = 0.426 K/W Cth2 = 0.187 J/K; Rth2 = 0.974 K/W 0.5 1.35 K/W K/W T1 - T6 / D1 - D6 IGBT (typ.) Cth1 = 0.028 J/K; Rth1 = 0.367 K/W Cth2 = 0.088 J/K; Rth2 = 0.983 K/W Output Inverter D1 - D6 Symbol Rectifier Diode (typ. at TJ = 125°C) V0 = 0.90V; R0 = 9 mΩ Maximum Ratings 26 17 A A Characteristic Values min. typ. max. 3.4 2.3 V V 16 130 A ns 0.55 1.6 K/W K/W Free Wheeling Diode (typ.) Cth1 = 0.024 J/K; Rth1 = 0.669 K/W Cth2 = 0.123 J/K; Rth2 = 0.931 K/W T7 / D7 IGBT (typ.) Cth1 = 0.028 J/K; Rth1 = 0.367 K/W Cth2 = 0.088 J/K; Rth2 = 0.983 K/W Free Wheeling Diode (typ.) Cth1 = 0.015 J/K; Rth1 = 1.144 K/W Cth2 = 0.009 J/K; Rth2 = 1.356 K/W 513 (TVJ D8 - D13 2-8 MUBW 15-12A6K Brake Chopper T7 Symbol Conditions VCES TVJ = 25°C to 150°C VGES Maximum Ratings 1200 V Continuous ± 20 V VGEM Transient ± 30 V IC25 IC80 TC = 25°C TC = 80°C 19 13 A A RBSOA VGE = ±15 V; RG = 82 Ω; TVJ = 125°C Clamped inductive load; L = 100 µH ICM = 20 VCEK ≤ VCES A tSC (SCSOA) VCE = 720 V; VGE = ±15 V; RG = 82 Ω; TVJ = 125°C non-repetitive 10 µs Ptot TC = 25°C 90 W Symbol Conditions (TVJ = 25°C, unless otherwise specified) VCE(sat) IC = 15 A; VGE = 15 V; TVJ = 25°C TVJ = 125°C VGE(th) IC = 0.4 mA; VGE = VCE ICES VCE = VCES; VGE = 0 V; TVJ = 25°C TVJ = 125°C IGES td(on) tr td(off) tf Eon Eoff Cies QGon Characteristic Values min. typ. max. 2.9 3.5 4.5 3.4 V V 6.5 V 0.5 mA mA 100 nA 0.8 VCE = 0 V; VGE = ± 20 V Inductive load, TVJ = 125°C VCE = 600 V; IC = 10 A VGE = ±15 V; RG = 82 Ω 45 40 290 60 1.2 1.1 ns ns ns ns mJ mJ VCE = 25 V; VGE = 0 V; f = 1 MH z VCE = 600 V; VGE = 15 V; IC = 10 A 600 45 pF nC 0.45 1.35 K/W K/W RthJC RthCH Brake Chopper D7 Conditions VRRM TVJ = 25°C to 150°C IF25 IF80 Maximum Ratings 1200 V TC = 25°C TC = 80°C 15 10 A A Symbol Conditions Characteristic Values min. typ. max. VF IF = 15 A; TVJ = 25°C TVJ = 125°C 2.0 VR = VRRM; TVJ = 25°C TVJ = 125°C IR IRM t rr IF = 10 A; diF/dt = -400 A/µs; TVJ = 125°C VR = 600 V RthJC RthCH © 2005 IXYS All rights reserved 3.5 V V 0.06 0.2 mA mA 13 110 A ns 0.85 2.5 K/W K/W 513 Symbol 3-8 MUBW 15-12A6K Temperature Sensor NTC Symbol Conditions Characteristic Values min. typ. max. R25 B25/85 T = 25°C 4.45 4.7 3510 5.0 kΩ K Module Symbol Conditions TVJ TJM Tstg Operating VISOL Maximum Ratings -40...+125 150 -40...+125 °C °C °C IISOL ≤ 1 mA; 50/60 Hz 2500 V~ Md Mounting torque (M4) 2.0 - 2.2 Nm Symbol Conditions Characteristic Values min. typ. max. dS dA Creepage distance (towards heatsink) Strike distance in air (towards heatsink) 12.7 12.7 40 g 513 Weight mm mm © 2005 IXYS All rights reserved 4-8 MUBW 15-12A6K Input Rectifier Bridge D8 - D13 80 200 103 A As TVJ = 125°C A 2 TVJ = 25°C TVJ= 45°C 60 150 2 It IFSM IF 40 TVJ= 45°C 100 TVJ= 150°C TVJ= 150°C 20 50 50Hz, 80% VRRM 0 0.0 0.6 1.8 V 1.2 102 0 0.001 2.4 0.01 0.1 VF s 1 1 t Fig. 1 Forward current versus voltage drop per diode RthA: 0.2 K/W 0.5 K/W 0.8 K/W 1.5 K/W 3 K/W 5 K/W 8 K/W Ptot 4 5 6 7ms 8 910 t 100 A 160 120 3 Fig. 3 I2t versus time per diode Fig. 2 Surge overload current W 2 ID(AV)80 60 80 40 40 20 0 0 0 20 40 60 80 A 0 20 40 60 80 100 120 140 °C ID(AV)M Tamb Fig. 4 Power dissipation versus direct output current and ambient temperature, sin 180° 0 20 40 60 80 100 120 140 °C TC Fig. 5 Max. forward current versus case temperature 1.6 K/W 1.2 ZthJC 0.8 0.4 MUBW15-12A6K 0.01 0.1 Fig. 6 Transient thermal impedance junction to case © 2005 IXYS All rights reserved s 1 t 10 513 0.0 0.001 5-8 MUBW 15-12A6K Output Inverter T1 - T6 / D1 - D6 30 30 VGE = 17 V VGE = 17 V 13 V 15 V 25 A 15 V 25 A 13 V IC IC 20 20 TVJ = 125°C TVJ = 25°C 15 15 11 V 11 V 10 10 5 5 9V 9V 0 0 0 1 2 3 4 0 6 V 7 5 1 2 3 4 VCE Fig. 7 Typ. output characteristics Fig. 8 Typ. output characteristics 50 30 25 A IC 6 V 7 5 VCE IF A 40 20 30 15 TVJ = 125°C 20 10 TVJ = 25°C TVJ = 25°C TVJ = 125°C 10 5 VCE = 20V 0 0 4 6 8 10 12 0 14 V 16 1 2 3 V 4 VF VGE Fig. 9 Typ. transfer characteristics Fig. 10 Typ. forward characteristics of free wheeling diode 200 50 20 trr V 15 40 A 160 ns 30 120 IRM VGE trr 10 80 20 VCE = 600V IC = 10A 10 IRM MUBW1012A7 0 0 0 10 20 30 40 nC 50 QG Fig. 11 Typ. turn on gate charge © 2005 IXYS All rights reserved 60 40 0 200 400 600 800 A/µs 0 1000 -di/dt Fig. 12 Typ. turn off characteristics of free wheeling diode 513 5 TVJ = 125°C VR = 600 V IF = 15 A 6-8 MUBW 15-12A6K Output Inverter T1 - T6 / D1 - D6 4 Eon mJ VCE = 600V VGE = ±15V 3 RG = 82Ω TVJ = 125°C 80 4 400 ns mJ 60 3 ns 300 t Eoff td(on) 2 40 2 20 1 Eoff RG = 82Ω TVJ = 125°C tr 1 td(off) VCE = 600V VGE = ±15V tf 0 0 0 0 5 10 15 0 0 20 A 5 10 15 IC 20 A IC Fig. 13 Typ. turn on energy and switching times versus collector current 2.0 Eon VCE = 600V VGE = ±15V IC = 10A TVJ = 125°C Eon 1.5 200 100 Eon mJ t Fig. 14 Typ. turn off energy and switching times versus collector current 1.2 100 ns td(on) 75 600 Eoff t td(off) 0.8 VCE = 600V VGE = ±15V IC = 10A TVJ = 125°C tr 1.0 50 0.5 25 0.0 0 ns mJ Eoff 0.4 400 t 200 tf 0 20 40 60 80 100 120 Ω 140 0.0 0 0 20 40 60 80 RG 100 RG Fig. 15 Typ. turn on energy and switching times versus gate resistor Fig.16 Typ. turn off energy and switching times versus gate resistor 30 10 A K/W 25 ICM 120 Ω 140 diode ZthJC 20 1 IGBT 15 10 0.1 single pulse 5 RG = 82 Ω TVJ = 125°C 0 0 200 400 600 800 1000 1200 1400 V VCE MUBW 15-12A6K 0.01 0.1 1 s 10 t Fig. 18 Typ. transient thermal impedance 513 Fig. 17 Reverse biased safe operating area RBSOA 0.01 0.001 © 2005 IXYS All rights reserved 7-8 MUBW 15-12A6K Brake Chopper T7 / D7 A 30 A 25 VGE = 15V 25 IC TVJ = 125°C IF 20 20 TVJ = 25°C 15 15 TVJ = 125°C 10 10 5 TVJ = 25°C 5 0 0 0 1 2 3 4 5 V 0 6 1 2 3 Fig. 19 Typ. output characteristics 4 400 ns 1.2 600 Eoff mJ 3 td(off) VCE = 600V VGE = ±15V 2 4 Fig. 20 Typ. forward characteristics of free wheeling diode mJ Eoff V VF VCE 300 t td(off) 0.8 VCE = 600V VGE = ±15V IC = 20A TVJ = 125°C 200 RG = 82Ω TVJ = 125°C 0.4 1 ns Eoff t 400 200 100 tf tf Eoff 0 0 0 5 10 15 0.0 20 A 0 20 40 60 80 100 IC 120 Ω 0 RG Fig. 21 Typ. turn off energy and switching times versus collector current Fig. 22 Typ. turn off energy and switching times versus gate resistor 10 Temperature Sensor NTC K/W diode ZthJC 10000 1 IGBT Ω R 1000 0.1 single pulse 0.01 0.001 MUBW15-12A6K 100 0.01 0.1 1 s 10 t 25 50 75 100 125 C 150 T Fig. 24 Typ. thermistor resistance versus temperature 513 Fig. 23 Typ. transient thermal impedance 0 © 2005 IXYS All rights reserved 8-8