IXYS MUBW15

MUBW 15-12A6K
Converter - Brake - Inverter Module (CBI1)
NPT IGBT
Three Phase
Rectifier
Brake Chopper
Three Phase
Inverter
V RRM = 1600V
IDAVM25 = 130 A
I FSM = 300 A
VCES = 1200 V
IC25 = 19 A
VCE(sat) = 2.9 V
VCES = 1200 V
IC25 = 19 A
VCE(sat) = 2.9 V
Application: AC motor drives with
Symbol
Conditions
Maximum Ratings
VRRM
1600
V
31
89
320
A
A
A
80
W
IFAV
IDAVM
IFSM
TC = 80°C; sine 180°
bridge output current; TC = 80°C; rectangular; d = 1/3
TVJ = 25°C; t = 10 ms; sine 50 Hz
Ptot
TC = 25°C
Symbol
Conditions
VF
IF = 30 A; TVJ = 25°C
TVJ = 125°C
1.0
1.1
IR
VR = VRRM; TVJ = 25°C
TVJ = 125°C
0.4
0.02 mA
mA
0.45
1.4 K/W
K/W
RthJC
RthCH
Characteristic Values
(TVJ = 25°C, unless otherwise specified)
min.
typ. max.
(per diode)
IXYS reserves the right to change limits, test conditions and dimensions.
© 2005 IXYS All rights reserved
1.35
V
V
•
•
•
•
•
Input from single or three phase grid
Three phase synchronous or
asynchronous motor
electric braking operation
UL registered E72873
Features
• High level of integration - only one power
semiconductor module required for the
whole drive
• Inverter with NPT IGBTs
- low saturation voltage
- positive temperature coefficient
- fast switching
- short tail current
• Epitaxial free wheeling diodes with
Hiperfast and soft reverse recovery
• Industry standard package with insulated
copper base plate and soldering pins for
PCB mounting
• Temperature sense included
513
Input Rectifier Bridge D8 - D13
1-8
MUBW 15-12A6K
Output Inverter T1 - T6
Symbol
Conditions
VCES
TVJ = 25°C to 150°C
VGES
Equivalent Circuits for Simulation
Maximum Ratings
Conduction
1200
V
Continuous
± 20
V
VGEM
Transient
± 30
V
IC25
IC80
TC = 25°C
TC = 80°C
19
13
A
A
RBSOA
VGE = ±15 V; RG = 82 Ω; TVJ = 125°C
Clamped inductive load; L = 100 µH
ICM =
26
VCEK ≤ VCES
A
tSC
(SCSOA)
VCE = 720 V; VGE = ±15 V; RG = 82 Ω; TVJ = 125°C
non-repetitive
10
µs
IGBT (typ. at VGE = 15 V; TJ = 125°C)
V0 = 1.50 V; R0 = 120 mΩ
Ptot
TC = 25°C
90
W
Free Wheeling Diode (typ. at TJ = 125°C)
V0 = 1.46 V; R0 = 31 mΩ
Symbol
Conditions
IC = 15 A; VGE = 15 V; TVJ = 25°C
TVJ = 125°C
VGE(th)
IC = 0.35 mA; VGE = VCE
ICES
VCE = VCES; VGE = 0 V; TVJ = 25°C
TVJ = 125°C
IGES
3.0
3.5
4.5
Inductive load, TVJ = 125°C
VCE = 600 V; IC = 10 A
VGE = ±15 V; RG = 82 Ω
Cies
QGon
VCE = 25 V; VGE = 0 V; f = 1 MHz
VCE = 600V; VGE = 15 V; IC = 10 A
RthJC
RthCH
(per IGBT)
3.4
V
V
6.5
V
0.6
mA
mA
100
nA
1.3
VCE = 0 V; VGE = ± 20 V
td(on)
tr
td(off)
tf
Eon
Eoff
T1 - T6 / D1 - D6
Characteristic Values
= 25°C, unless otherwise specified)
min.
typ. max.
VCE(sat)
Conditions
IF25
IF80
TC = 25°C
TC = 80°C
Symbol
Conditions
VF
IF = 30 A; VGE = 0 V; TVJ = 25°C
TVJ = 125°C
IRM
t rr
IF = 15 A; diF /dt = -400A/µs; TVJ = 125°C
VR = 600 V; VGE = 0 V
RthJC
RthCH
(per diode)
© 2005 IXYS All rights reserved
T7 / D7
IGBT (typ. at VGE = 15 V; TJ = 125°C)
V0 = 1.50 V; R0 = 120 mΩ
Free Wheeling Diode (typ. at TJ = 125°C)
V0 = 1.46 V; R0 = 63 mΩ
Thermal Response
50
40
290
60
1.2
1.1
ns
ns
ns
ns
mJ
mJ
D8 - D13
600
45
pF
nC
Rectifier Diode (typ.)
Cth1 = 0.037 J/K; Rth1 = 0.426 K/W
Cth2 = 0.187 J/K; Rth2 = 0.974 K/W
0.5
1.35 K/W
K/W
T1 - T6 / D1 - D6
IGBT (typ.)
Cth1 = 0.028 J/K; Rth1 = 0.367 K/W
Cth2 = 0.088 J/K; Rth2 = 0.983 K/W
Output Inverter D1 - D6
Symbol
Rectifier Diode (typ. at TJ = 125°C)
V0 = 0.90V; R0 = 9 mΩ
Maximum Ratings
26
17
A
A
Characteristic Values
min.
typ. max.
3.4
2.3
V
V
16
130
A
ns
0.55
1.6 K/W
K/W
Free Wheeling Diode (typ.)
Cth1 = 0.024 J/K; Rth1 = 0.669 K/W
Cth2 = 0.123 J/K; Rth2 = 0.931 K/W
T7 / D7
IGBT (typ.)
Cth1 = 0.028 J/K; Rth1 = 0.367 K/W
Cth2 = 0.088 J/K; Rth2 = 0.983 K/W
Free Wheeling Diode (typ.)
Cth1 = 0.015 J/K; Rth1 = 1.144 K/W
Cth2 = 0.009 J/K; Rth2 = 1.356 K/W
513
(TVJ
D8 - D13
2-8
MUBW 15-12A6K
Brake Chopper T7
Symbol
Conditions
VCES
TVJ = 25°C to 150°C
VGES
Maximum Ratings
1200
V
Continuous
± 20
V
VGEM
Transient
± 30
V
IC25
IC80
TC = 25°C
TC = 80°C
19
13
A
A
RBSOA
VGE = ±15 V; RG = 82 Ω; TVJ = 125°C
Clamped inductive load; L = 100 µH
ICM =
20
VCEK ≤ VCES
A
tSC
(SCSOA)
VCE = 720 V; VGE = ±15 V; RG = 82 Ω; TVJ = 125°C
non-repetitive
10
µs
Ptot
TC = 25°C
90
W
Symbol
Conditions
(TVJ = 25°C, unless otherwise specified)
VCE(sat)
IC = 15 A; VGE = 15 V; TVJ = 25°C
TVJ = 125°C
VGE(th)
IC = 0.4 mA; VGE = VCE
ICES
VCE = VCES; VGE = 0 V; TVJ = 25°C
TVJ = 125°C
IGES
td(on)
tr
td(off)
tf
Eon
Eoff
Cies
QGon
Characteristic Values
min.
typ. max.
2.9
3.5
4.5
3.4
V
V
6.5
V
0.5
mA
mA
100
nA
0.8
VCE = 0 V; VGE = ± 20 V
Inductive load, TVJ = 125°C
VCE = 600 V; IC = 10 A
VGE = ±15 V; RG = 82 Ω
45
40
290
60
1.2
1.1
ns
ns
ns
ns
mJ
mJ
VCE = 25 V; VGE = 0 V; f = 1 MH z
VCE = 600 V; VGE = 15 V; IC = 10 A
600
45
pF
nC
0.45
1.35 K/W
K/W
RthJC
RthCH
Brake Chopper D7
Conditions
VRRM
TVJ = 25°C to 150°C
IF25
IF80
Maximum Ratings
1200
V
TC = 25°C
TC = 80°C
15
10
A
A
Symbol
Conditions
Characteristic Values
min.
typ. max.
VF
IF = 15 A; TVJ = 25°C
TVJ = 125°C
2.0
VR = VRRM; TVJ = 25°C
TVJ = 125°C
IR
IRM
t rr
IF = 10 A; diF/dt = -400 A/µs; TVJ = 125°C
VR = 600 V
RthJC
RthCH
© 2005 IXYS All rights reserved
3.5
V
V
0.06
0.2
mA
mA
13
110
A
ns
0.85
2.5 K/W
K/W
513
Symbol
3-8
MUBW 15-12A6K
Temperature Sensor NTC
Symbol
Conditions
Characteristic Values
min.
typ. max.
R25
B25/85
T = 25°C
4.45
4.7
3510
5.0 kΩ
K
Module
Symbol
Conditions
TVJ
TJM
Tstg
Operating
VISOL
Maximum Ratings
-40...+125
150
-40...+125
°C
°C
°C
IISOL ≤ 1 mA; 50/60 Hz
2500
V~
Md
Mounting torque (M4)
2.0 - 2.2
Nm
Symbol
Conditions
Characteristic Values
min.
typ. max.
dS
dA
Creepage distance (towards heatsink)
Strike distance in air (towards heatsink)
12.7
12.7
40
g
513
Weight
mm
mm
© 2005 IXYS All rights reserved
4-8
MUBW 15-12A6K
Input Rectifier Bridge D8 - D13
80
200
103
A
As
TVJ = 125°C
A
2
TVJ = 25°C
TVJ= 45°C
60
150
2
It
IFSM
IF
40
TVJ= 45°C
100
TVJ= 150°C
TVJ= 150°C
20
50
50Hz, 80% VRRM
0
0.0
0.6
1.8 V
1.2
102
0
0.001
2.4
0.01
0.1
VF
s
1
1
t
Fig. 1 Forward current versus
voltage drop per diode
RthA:
0.2 K/W
0.5 K/W
0.8 K/W
1.5 K/W
3 K/W
5 K/W
8 K/W
Ptot
4 5 6 7ms
8 910
t
100
A
160
120
3
Fig. 3 I2t versus time per diode
Fig. 2 Surge overload current
W
2
ID(AV)80
60
80
40
40
20
0
0
0
20
40
60
80
A
0
20
40
60
80 100 120 140 °C
ID(AV)M
Tamb
Fig. 4 Power dissipation versus direct output current
and ambient temperature, sin 180°
0
20 40 60 80 100 120 140 °C
TC
Fig. 5 Max. forward current
versus case temperature
1.6
K/W
1.2
ZthJC
0.8
0.4
MUBW15-12A6K
0.01
0.1
Fig. 6 Transient thermal impedance junction to case
© 2005 IXYS All rights reserved
s
1
t
10
513
0.0
0.001
5-8
MUBW 15-12A6K
Output Inverter T1 - T6 / D1 - D6
30
30
VGE = 17 V
VGE = 17 V
13 V
15 V
25
A
15 V
25
A
13 V
IC
IC
20
20
TVJ = 125°C
TVJ = 25°C
15
15
11 V
11 V
10
10
5
5
9V
9V
0
0
0
1
2
3
4
0
6 V 7
5
1
2
3
4
VCE
Fig. 7 Typ. output characteristics
Fig. 8 Typ. output characteristics
50
30
25
A
IC
6 V 7
5
VCE
IF
A
40
20
30
15
TVJ = 125°C
20
10
TVJ = 25°C
TVJ = 25°C
TVJ = 125°C
10
5
VCE = 20V
0
0
4
6
8
10
12
0
14 V 16
1
2
3
V
4
VF
VGE
Fig. 9 Typ. transfer characteristics
Fig. 10 Typ. forward characteristics
of free wheeling diode
200
50
20
trr
V
15
40
A
160
ns
30
120
IRM
VGE
trr
10
80
20
VCE = 600V
IC = 10A
10
IRM
MUBW1012A7
0
0
0
10
20
30
40
nC
50
QG
Fig. 11 Typ. turn on gate charge
© 2005 IXYS All rights reserved
60
40
0
200
400
600
800
A/µs
0
1000
-di/dt
Fig. 12 Typ. turn off characteristics
of free wheeling diode
513
5
TVJ = 125°C
VR = 600 V
IF = 15 A
6-8
MUBW 15-12A6K
Output Inverter T1 - T6 / D1 - D6
4
Eon
mJ
VCE = 600V
VGE = ±15V
3
RG = 82Ω
TVJ = 125°C
80
4
400
ns
mJ
60
3
ns
300
t
Eoff
td(on)
2
40
2
20
1
Eoff
RG = 82Ω
TVJ = 125°C
tr
1
td(off)
VCE = 600V
VGE = ±15V
tf
0
0
0
0
5
10
15
0
0
20 A
5
10
15
IC
20 A
IC
Fig. 13 Typ. turn on energy and switching
times versus collector current
2.0
Eon
VCE = 600V
VGE = ±15V
IC = 10A
TVJ = 125°C
Eon 1.5
200
100
Eon
mJ
t
Fig. 14 Typ. turn off energy and switching
times versus collector current
1.2
100
ns
td(on)
75
600
Eoff
t
td(off)
0.8
VCE = 600V
VGE = ±15V
IC = 10A
TVJ = 125°C
tr
1.0
50
0.5
25
0.0
0
ns
mJ
Eoff
0.4
400
t
200
tf
0
20
40
60
80
100
120 Ω 140
0.0
0
0
20
40
60
80
RG
100
RG
Fig. 15 Typ. turn on energy and switching
times versus gate resistor
Fig.16 Typ. turn off energy and switching
times versus gate resistor
30
10
A
K/W
25
ICM
120 Ω 140
diode
ZthJC
20
1
IGBT
15
10
0.1
single pulse
5
RG = 82 Ω
TVJ = 125°C
0
0
200
400
600
800 1000 1200 1400 V
VCE
MUBW 15-12A6K
0.01
0.1
1
s 10
t
Fig. 18 Typ. transient thermal impedance
513
Fig. 17 Reverse biased safe operating area
RBSOA
0.01
0.001
© 2005 IXYS All rights reserved
7-8
MUBW 15-12A6K
Brake Chopper T7 / D7
A
30
A
25
VGE = 15V
25
IC
TVJ = 125°C
IF
20
20
TVJ = 25°C
15
15
TVJ = 125°C
10
10
5
TVJ = 25°C
5
0
0
0
1
2
3
4
5
V
0
6
1
2
3
Fig. 19 Typ. output characteristics
4
400
ns
1.2
600
Eoff
mJ
3
td(off)
VCE = 600V
VGE = ±15V
2
4
Fig. 20 Typ. forward characteristics
of free wheeling diode
mJ
Eoff
V
VF
VCE
300 t
td(off)
0.8
VCE = 600V
VGE = ±15V
IC = 20A
TVJ = 125°C
200
RG = 82Ω
TVJ = 125°C
0.4
1
ns
Eoff
t
400
200
100
tf
tf
Eoff
0
0
0
5
10
15
0.0
20 A
0
20
40
60
80
100
IC
120 Ω
0
RG
Fig. 21 Typ. turn off energy and switching
times versus collector current
Fig. 22 Typ. turn off energy and switching
times versus gate resistor
10
Temperature Sensor NTC
K/W
diode
ZthJC
10000
1
IGBT
Ω
R
1000
0.1
single pulse
0.01
0.001
MUBW15-12A6K
100
0.01
0.1
1
s 10
t
25
50
75
100
125 C 150
T
Fig. 24 Typ. thermistor resistance
versus temperature
513
Fig. 23 Typ. transient thermal impedance
0
© 2005 IXYS All rights reserved
8-8