MUBW 4-12 A6 Converter - Brake - Inverter Module (CBI1) Preliminary data Rectifier Brake VRRM = 1600V IFAVM = 11 A IFSM = 250 A VCES = 1200 V IC25 = 3.6 A VCE(sat) = 2.8 V Inverter VCES = 1200 V IC25 = 3.6 A VCE(sat) = 2.8 V Features Input Rectifier Bridge D8 - D13 ● Symbol Conditions Maximum Ratings VRRM 1600 V IF TVJ = 25°C 36 A IFAVM TVJ = 150°C; TK = 70°C 11 A IFSM TVJ = 45°C; t = 10 ms sine 50 Hz 250 A i²t TVJ = 125°C 310 A²s +150 °C ● ● ● TVJ ● ● NPT IGBT technology Square RBSOA, no latchup Free wheeling diodes with Hiperfast and soft recovery behaviour Isolation voltage 2500 V~ Built in temperature sense High level of integration: one module for complete drive system Direct Copper Bonded Al2O3 ceramic base plate Applications Conditions IR VRRM = 1200 V; TVJ = 25°C TVJ = 125°C VF IF = 36 A RthJC per die Characteristic Values (TVJ = 25°C, unless otherwise specified) min. typ. max. 10 3 µA mA 1.4 V ● AC motor control ● AC servo and robot drives Advantages ● 1.15 ● ● 1.4 °C/W ● IXYS reserves the right to change limits, test conditions and dimensions. © 1999 IXYS All rights reserved No need of external isolation Easy to mount with two screws Package designed for wave soldering High temperature and power cycling capability 920 Symbol 1-8 MUBW 4-12 A6 Output Inverter T1 - T6, D1 - D6 Symbol Conditions VCES TVJ = 25°C 1200 V VCGR TVJ = 25°C; RGE = 20kΩ 1200 V VGE TVJ = 25°C ±20 V IC TC = 25°C TC = 90°C 3.6 2.4 A A ICM tp = 1 ms = 1% duty cycle; 7.2 4.8 A A tSC VCE = 600 V; TVJ = 125°C non-repetitive 10 µs Ptot TC = 25°C 45 W TVJ TVJ Free-Wheeling Diode IGBT +150 +150 °C °C Symbol Conditions ICES VGE = 0 V; VCE = 1000 V IGES VCE = 0 V; VGE = 25 V VGE(th) VGE = VCE; IC = 0.1 mA V(BR)CES VGE = 0 V; IC = 10 mA; TVJ = -40°C VCEsat VGE = 15 V; IC = 1.5 A; TVJ = 25°C TVJ = 150°C tf tr td(on) td(off) Eoff Eon Ciss Coss Crss Maximum Ratings TC = 25°C TC = 110°C Characteristic Values (TVJ = 25°C, unless otherwise specified) min. typ. max. Inductive load, TVJ = 125°C VCC = 600 V; IC = 1.5 A RG = 100 Ω; VGE = ±15 V VGE = 0 V VCE = 25 V f = 1 MHz 4.5 1 25 µA 0.1 100 nA 5.5 6.5 V 1200 V 2.8 4 3.3 4.5 V V 100 58 ns ns 80 290 ns ns 0.12 0.34 mJ mJ 225 25 13 pF pF pF 0.6 S 24.1 nC gfs VCE = 20 V; IC = 1.5 A Qg VCC = 800 V; IC = 1 A pulse; VGE = 15 V VF IF = 4 A; VGE = 0 V; trr IF = 4 A; VGE = 0 V; TVJ = 100°C VR = -300 V; diF/dt = -800 A/µs 55 ns Qr IF = 4 A; VGE = 0 V; TVJ = 100°C VR = -300 V; diF/dt = -800 A/µs 0.8 µC TVJ = 25°C TVJ = 100°C 2.3 2 Ir RthJC 3 250 IGBT Diode (per die) (per die) © 1999 IXYS All rights reserved 2.3 2.25 V V µA °C/W °C/W 2-8 MUBW 4-12 A6 Brake Chopper T7, D7 Symbol Conditions VCES TVJ = 25°C 1200 V VCGR TVJ = 25°C; RGE = 20kΩ 1200 V VGE TVJ = 25°C ±20 V IC TC = 25°C TC = 90°C 3.6 2.4 A A ICM tp = 1 ms = 1% duty cycle; 7.2 4.8 A A tSC VCE = 600 V; TVJ = 125°C non-repetitive 10 µs Ptot TC = 25°C 45 W TVJ TVJ Free-Wheeling Diode IGBT +150 +150 °C °C Symbol Conditions ICES VGE = 0 V; VCE = 1000 V IGES VCE = 0 V; VGE = 25 V VGE(th) VGE = VCE; IC = 0.1 mA V(BR)CES VGE = 0 V; IC = 10 mA; TVJ = -40°C VCEsat VGE = 15 V; IC = 1.5 A; TVJ = 25°C TVJ = 150°C tf tr td(on) td(off) Eoff Eon Ciss Coss Crss Maximum Ratings TC = 25°C TC = 110°C Characteristic Values (TVJ = 25°C, unless otherwise specified) min. typ. max. Inductive load, TVJ = 125°C VCC = 600 V; IC = 1.5 A RG = 100 Ω; VGE = ±15 V VGE = 0 V VCE = 25 V f = 1 MHz 4.5 1 25 µA 0.1 100 nA 5.5 6.5 V 1200 V 2.8 4 3.3 4.5 V V 100 58 ns ns 80 290 ns ns 0.12 0.34 mJ mJ 225 25 13 pF pF pF 0.6 S 24.1 nC gfs VCE = 20 V; IC = 1.5 A Qg VCC = 800 V; IC = 1 A pulse; VGE = 15 V VF IF = 4 A; VGE = 0 V; trr IF = 4 A; VGE = 0 V; TVJ = 100°C VR = -300 V; diF/dt = -800 A/µs 55 ns Qr IF = 4 A; VGE = 0 V; TVJ = 100°C VR = -300 V; diF/dt = -800 A/µs 0.8 µC TVJ = 25°C TVJ = 100°C 2.3 2 Ir RthJC 3 250 IGBT Diode (per die) (per die) © 1999 IXYS All rights reserved 2.3 2.25 V V µA °C/W °C/W 3-8 MUBW 4-12 A6 Module Symbol Conditions Tstg VISOL IISOL ≤ 1 mA; 50/60 Hz; t = 1 min Md Mounting torque (M4) dS dA Creepage distance on surface Strike distance in air Weight typ. Maximum Ratings -40...+125 °C 2500 V~ 2.0 - 2.2 18 - 20 Nm lb.in. 12.7 12.7 mm mm 42 g Temperature Sensor R Symbol Conditions R Tamb = 20°C Maximum Ratings 4.7 kΩ For additional data see C620/4.7k 5% S+M NTC thermistor catalog Dimensions in mm (1 mm = 0.0394") © 1999 IXYS All rights reserved 4-8 MUBW 4-12 A6 Input Rectifier Bridge D8 - D13 50 300 1000 A A 250 800 A2s typ. 40 lim. 50Hz, 80%VRRM IFSM IF 200 TVJ= 180°C TVJ= 25°C 600 2 TVJ = 45°C TVJ = 180°C 30 VR = 0 V It 400 150 20 TVJ=45°C 100 10 200 TVJ=180°C 50 0 V 1.6 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 VF 0 10-3 Forward characteristics 100 10-2 10-1 100 s t 101 1 2 3 4 5 6 7 ms 8 910 t I2t versus time (1-10 ms) Surge overload current IFSM: crest value, t: duration 10 (ZthJH is measured using 50 µm thermal grease) 1 D =0 D = 0.005 D = 0.01 D = 0.02 D = 0.05 D = 0.1 D = 0.2 D = 0.5 0.00001 0.0001 0.001 0.01 0.1 1 10 0.1 ZthJH[K/W] 0.01 0.001 100 t (s) Transient thermal resistance junction to heatsink © 1999 IXYS All rights reserved 5-8 MUBW 4-12 A6 Output Inverter T1 - T6 Typ. output characteristics 25°C 8 7 k 6 Ugs(V) a 5V b 6V c 7V d 8V e 9V f 10V g 11V h 12V i 13V j 14V k 15V j i 5 h Ic(V) 4 g 3 f 2 e 1 d 0 0 2 4 6 8 a,b,c 10 Uce(V) Reverse biased safe operating area Short circuit safe operating area 2.5 10 2.0 8 ICsc / IC ICpuls / IC 1.5 6 1.0 4 0.5 TVJ = 150°C VGE = 15 V 0.0 0 400 800 VCE 1200 V © 1999 IXYS All rights reserved di/dt = 200 A/µs 600 A/µs 1000A/µs TVJ = 150°C 2 V = ±15 V GE Tsc ≤ 10 µs L < 50 nH 0 0 400 800 VCE 1200 V 6-8 MUBW 4-12 A6 Output Inverter T1 - T6 Typ. switching times Typ. switching times 1000 100 100 t(ns) t(ns) 1000 RG = 250 Ω VCE = 600 V TVJ = 125°C tf(off) IC = 1.5 A VCE = 600 V TVJ = 125°C td(on) tr(on) 1 0.75 1 50 td(off) 10 td(off) 10 150 250 350 450 tf(off) td(on) tr(on) 1.25 1.75 Typ. switching losses Typ. switching losses 0.5 0.4 0.9 IC = 1.5 A VCE = 600 V E(off25°C) 0.8 E(off125°C) 0.7 RG = 250 Ω VCE = 600 V E(on25°C) 0.35 E(off 25°C) 0.3 0.25 0.6 E(off 125°C) E(on25°C) E(mWs) E(mWs) 2.75 I(A) Rg(Ohm) 0.45 2.25 E(on125°C) 0.2 0.4 0.15 0.3 0.1 0.2 0.05 0.1 0 50 150 250 350 E(on125°C) 0.5 0 0.75 450 1.25 1.75 2.25 2.75 I(A) Rg(Ohm) Transient thermal resistance junction to heatsink 10 (ZthJH is measured using 50 µm thermal grease) 1 D=0 D = 0.005 D = 0.01 D = 0.02 D = 0.05 D = 0.1 D = 0.2 D = 0.5 IGBT ZthJH [K/W] 0.1 0.01 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 t (s) © 1999 IXYS All rights reserved 7-8 MUBW 4-12 A6 Output Inverter D1 - D6 30 2000 A IF 25 nC 20 1500 Qr TVJ= 100°C A VR = 600V IRM IF= 20A IF= 10A IF= 5A TVJ=150°C 15 40 TVJ= 100°C VR = 600V 30 1000 20 500 10 IF= 20A IF= 10A IF= 5A TVJ=100°C 10 TVJ= 25°C 5 0 0 1 2 3 VF 0 100 4V Forward current IF versus VF 0 A/µs 1000 -diF/dt 0 Reverse recovery charge Q versus -diF/dt 2.0 150 V 130 1.0 110 0.5 Qr 90 40 µs tfr VFR 80 0.8 40 0.4 100 0.0 0 tfr IF= 20A IF= 10A IF= 5A 120 IRM 1.2 TVJ= 100°C IF = 10A VFR trr Kf 600 A/µs 800 1000 -diF/dt 120 140 1.5 400 Peak reverse current IRM versus -diF/dt TVJ= 100°C VR = 600V ns 200 80 120 °C 160 8-12 0 0 200 400 TVJ 600 800 1000 A/µs 0 200 -diF/dt Dynamic parameters Qr, IRM versus TVJ Recovery time trr versus -diF/dt 400 0.0 600 A/µs 800 1000 diF/dt Peak forward voltage VFR and tfr versus diF/dt 10 (ZthJH is measured using 50 µm thermal grease) 1 D=0 D = 0.005 D = 0.01 D = 0.02 D = 0.05 D = 0.1 D = 0.2 D = 0.5 0.00001 0.0001 0.001 0.01 0.1 1 10 0.1 FRED ZthJH[K/W] 0.01 0.001 100 t (s) Transient thermal resistance junction to heatsink © 1999 IXYS All rights reserved 8-8