MUBW 6-06 A6 Converter - Brake - Inverter Module (CBI1) Rectifier Brake VRRM = 1200V IFAVM = 11 A IFSM = 250 A VCES = 600 V IC25 = 7 A VCE(sat) = 2.0 V Inverter VCES = 600 V IC25 = 7 A VCE(sat) = 2.0 V Features Input Rectifier Bridge D8 - D13 ● Symbol Conditions Maximum Ratings VRRM 1200 V IF TVJ = 25°C 36 A IFAVM TVJ = 150°C; TK = 70°C 11 A IFSM TVJ = 45°C; t = 10 ms sine 50 Hz 250 A i²t TVJ = 125°C 310 A²s +150 °C ● ● ● TVJ ● ● NPT IGBT technology Square RBSOA, no latchup Free wheeling diodes with Hiperfast and soft recovery behaviour Isolation voltage 2500 V~ Built in temperature sense High level of integration: one module for complete drive system Direct Copper Bonded Al2O3 ceramic base plate Applications Conditions IR VRRM = 1200 V; TVJ = 25°C TVJ = 125°C VF IF = 36 A RthJC per die Characteristic Values (TVJ = 25°C, unless otherwise specified) min. typ. max. 10 3 µA mA 1.4 V ● AC motor control ● AC servo and robot drives Advantages ● 1.15 ● ● 1.4 °C/W ● IXYS reserves the right to change limits, test conditions and dimensions. © 2000 IXYS All rights reserved No need of external isolation Easy to mount with two screws Package designed for wave soldering High temperature and power cycling capability 031 Symbol 1-8 MUBW 6-06 A6 Output Inverter T1 - T6, D1 - D6 Symbol Conditions VCES TVJ = 25°C 600 V VCGR TVJ = 25°C; RGE = 20kW 600 V VGE TVJ = 25°C ±20 V IC TC = 25°C TC = 90°C 7 4.5 A A ICM tp = 1 ms = 1% duty cycle; 14 9 A A tSC IGBT VCE = 600 V; TVJ = 125°C non-repetitive 10 µs Ptot TC = 25°C 38 W TVJ TVJ Free-Wheeling Diode IGBT +150 +150 °C °C Symbol Conditions ICES VGE = 0 V; VCE = 600 V 10 µA IGES VCE = 0 V; VGE = 25 V 100 nA VGE(th) VGE = VCE; IC = 0.2 mA 5 V V(BR)CES VGE = 0 V; IC = 0.5 mA; TVJ = -40°C VCE(sat) VGE = 15 V; IC = 4 A; TVJ = 25°C TVJ = 150°C tf tr td(on) td(off) Eoff Eon Ciss Coss Crss Maximum Ratings TC = 25°C TC = 90°C Characteristic Values (TVJ = 25°C, unless otherwise specified) min. typ. max. 3 4 600 V 2.0 2.3 2.5 2.8 V V 100 20 150 30 ns ns Inductive load, TVJ = 150°C VCC = 400 V; IC = 4 A RG = 50 W; VGE = ±15 V 20 260 30 390 ns ns 0.1 0.2 0.13 0.26 mJ mJ VGE = 0 V VCE = 25 V f = 1 MHz 270 30 18 340 40 23 pF pF pF gfs VCE = 20 V; IC = 4 A Qg 0.8 3.2 S VCC = 400 V; IC = 6 A pulse; VGE = 15 V 24 nC VF IF = 10 A; VGE = 0 V; TVJ = 25°C TVJ = 150°C 2 1.8 V V trr IF = 10 A; VR = -300 V; VGE = 0 V diF/dt = -350 A/µs; TVJ = 100°C 0.2 µs Qr IF = 10 A; VR = -300 V; TVJ = 25°C diF/dt = -350 A/µs; VGE= 0 V; TVJ = 125°C 0.3 0.9 µC µC Ir RthJC 250 IGBT Diode (per die) (per die) © 2000 IXYS All rights reserved 2.7 2.3 µA °C/W °C/W 2-8 MUBW 6-06 A6 Brake Chopper T7, D7 Symbol Conditions VCES TVJ = 25°C 600 V VCGR TVJ = 25°C; RGE = 20kW 600 V VGE TVJ = 25°C ±20 V IC TC = 25°C TC = 90°C 7 4.5 A A ICM tp = 1 ms = 1% duty cycle; 14 9 A A tSC IGBT VCE = 600 V; TVJ = 125°C non-repetitive 10 µs Ptot TC = 25°C 38 W TVJ TVJ Free-Wheeling Diode IGBT +150 +150 °C °C Symbol Conditions ICES VGE = 0 V; VCE = 600 V 20 µA IGES VCE = 0 V; VGE = 25 V 100 nA VGE(th) VGE = VCE; IC = 0.2 mA 5 V V(BR)CES VGE = 0 V; IC = 0.5 mA; TVJ = -40°C VCE(sat) VGE = 15 V; IC = 4 A; TVJ = 25°C TVJ = 150°C tf tr td(on) td(off) Eoff Eon Ciss Coss Crss Maximum Ratings TC = 25°C TC = 90°C Characteristic Values (TVJ = 25°C, unless otherwise specified) min. typ. max. 3 4 600 V 2.0 2.3 2.5 2.8 V V 100 20 150 30 ns ns Inductive load, TVJ = 150°C VCC = 400 V; IC = 4 A RG = 50 W; VGE = ±15 V 20 260 30 390 ns ns 0.1 0.2 0.13 0.26 mJ mJ VGE = 0 V VCE = 25 V f = 1 MHz 270 30 18 340 40 23 pF pF pF gfs VCE = 20 V; IC = 4 A Qg 0.8 3.2 S VCC = 400 V; IC = 6 A pulse; VGE = 15 V 24 nC VF IF = 10 A; VGE = 0 V; TVJ = 25°C TVJ = 150°C 2 1.8 V V trr IF = 10 A; VR = -300 V; VGE = 0 V diF/dt = -350 A/µs; TVJ = 100°C 0.2 µs Qr IF = 10 A; VR = -300 V; TVJ = 25°C diF/dt = -350 A/µs; VGE= 0 V; TVJ = 125°C 0.3 0.9 µC µC Ir RthJC 250 IGBT Diode (per die) (per die) © 2000 IXYS All rights reserved 2.7 2.3 µA °C/W °C/W 3-8 MUBW 6-06 A6 Module Symbol Conditions Maximum Ratings Tstg VISOL IISOL £ 1 mA; 50/60 Hz; t = 1 min Md Mounting torque (M4) dS dA Creepage distance on surface Strike distance in air Weight typ. -40...+125 °C 2500 V~ 2.0 - 2.2 18 - 20 Nm lb.in. 12.7 12.7 mm mm 42 g Temperature Sensor R Symbol Conditions R Tamb = 20°C Maximum Ratings 4.7 kW For additional data see C620/4.7k 5% S+M NTC thermistor catalog 3.4 ± 0.1 21.1 ± 0.5 17.1 ± 0.3 5.7 ± 0.3 Dimensions in mm (1 mm = 0.0394") 57.3-0.3 2 +0. 5.5 4.3+ © 2000 IXYS All rights reserved 0.2 4-8 MUBW 6-06 A6 Input Rectifier Bridge D8 - D13 50 300 1000 A A 250 800 A2s typ. 40 lim. 50Hz, 80%VRRM IFSM IF 200 TVJ= 180°C TVJ= 25°C 600 2 TVJ = 45°C TVJ = 180°C 30 VR = 0 V It 400 150 20 TVJ=45°C 100 10 200 TVJ=180°C 50 0 V 1.6 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 VF 0 10-3 Forward characteristics 100 10-2 10-1 100 s t 101 1 2 3 4 5 6 7 ms 8 910 t I2t versus time (1-10 ms) Surge overload current IFSM: crest value, t: duration 10 (ZthJH is measured using 50 µm thermal grease) 1 D =0 D = 0.005 D = 0.01 D = 0.02 D = 0.05 D = 0.1 D = 0.2 D = 0.5 0.00001 0.0001 0.001 0.01 0.1 1 10 0.1 ZthJH[K/W] 0.01 0.001 100 t (s) Transient thermal resistance junction to heatsink © 2000 IXYS All rights reserved 5-8 MUBW 6-06 A6 Output Inverter T1 - T6, D1 - D6 7\S2XWSXWFKDUDFWHULVWLFV& ,F>$@ 9JH 9 9JH 9 9JH 9 9JH 9 9JH 9 9JH 9 9JH 9 9JH 9 9FH>9@ 7\S2XWSXWFKDUDFWHULVWLFV& 9JH ,F>$@ 9 9JH 9 9JH 9 9JH 9 9JH 9 9JH 9 9FH>9@ 7\S*DWH&KDUJH 9FF 9 9FF 9 9JV >9@ 4J>Q&@ © 2000 IXYS All rights reserved 6-8 MUBW 6-06 A6 Output Inverter T1 - T6, D1 - D6 7 \ S 6 Z LWF K LQ J OR V V H V ( I, F 7 \ S 6 Z LWF K LQ J OR V V H V ( Reverse biased safe operating area I5 2.5 P - P - 3 D U D P H WH U 3 D U D P H WH U && * 9 P - 5 7 M 9 W && ,& 9 P - 7 M P - P - 9 $ 2.0 (RQ (RQ (RII ( R II P - P - ICpuls / IC ( P - ( P - P - P - P - P - P - P - P - P - P - P - 1.5 P - 1.0 0.5 TVJ = 150°C VGE = 15 V 0.0 P $ $ $ $ $ $ , & $ $ $ $ $ 0 W 20 W 40 W > $ @ 60 W 80 W 10 0 W 1 20 W * D W H U H V L V W D Q F H 5 1 40 W * [W] 1 60 W 1 80 W 200 W 220 W 0 200 400 600 V VCE Short circuit safe operating area 10 8 di/dt = 200 A/µs 600 A/µs 1000A/µs ICsc / IC 6 4 TVJ = 150°C 2 V = ±15 V GE Tsc £ 10 µs L < 60 nH 0 0 200 400 VCE 600 V Transient thermal resistance junction to heatsink 10 (ZthJH is measured using 50 µm thermal grease) 1 D=0 D = 0.005 D = 0.01 D = 0.02 D = 0.05 D = 0.1 D = 0.2 D = 0.5 IGBT ZthJH[K/W] 0.1 0.01 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 t(s) © 2000 IXYS All rights reserved 7-8 MUBW 6-06 A6 Output Inverter D1 - D6 30 1.4 T = 100°C nC VJ V = 300V 1.2 R A 25 IF TVJ=150°C TVJ=100°C TVJ= 25°C 20 15 40 TVJ= 100°C A VR = 300V 1.0 Qr IRM IF= 20A IF= 10A IF= 5A 0.8 30 IF= 20A IF= 10A IF= 5A 20 0.6 10 0.4 5 10 0.2 0 0.0 0.5 1.0 0.0 100 2.0 V 2.5 1.5 VF Forward current IF versus VF 0 A/ms 1000 -diF/dt 0 Reverse recovery charge Qr versus -diF/dt 120 2.0 1.0 90 IRM 80 0.5 0.9 10 0.6 5 0.3 Qr TVJ= 100°C IF = 10A 70 0.0 0 40 80 120 °C 160 0 200 400 TVJ 600 0 800 A/ ms 1000 0 -diF/dt Dynamic parameters Qr, IRM versus TVJ ms VFR tfr tfr IF= 20A IF= 10A IF= 5A 100 1.2 V VFR 15 trr 1.5 ms 1000 600 A/ 800 -diF/dt 20 110 Kf 400 Peak reverse current IRM versus -diF/dt TVJ= 100°C VR = 300V ns 200 Recovery time trr versus -diF/dt 200 400 8-06A 0.0 ms 1000 600 A/ 800 diF/dt Peak forward voltage VFR and tfr versus diF/dt 10 (ZthJH is measured using 50 µm thermal grease) 1 Fred ZthJH[K/W] D=0 D = 0.005 D = 0.01 D = 0.02 D = 0.05 D = 0.1 D = 0.2 D = 0.5 0.1 0.01 0.001 0.00001 0.0001 0.001 0.01 t(s) 0.1 1 10 100 Transient thermal resistance junction to heatsink © 2000 IXYS All rights reserved 8-8