VUB 71 VRRM = 1200-1600 V IdAVM = 70 A Three Phase Rectifier Bridge with IGBT and Fast Recovery Diode for Braking System VRRM 4 5 1 2 Type V 1200 1600 VUB 71-12 NO1 VUB 71-16 NO1 6 Test Conditions VRRM IdAV IdAVM TH = 110 C, sinusoidal 120 limited by leads IFSM I2t Rectifier Diodes Symbol 7 9 10 Maximum Ratings 1200 / 1600 59 70 V A A TVJ = 45 C, t = 10 ms, VR = 0 V TVJ = 150 C, t = 10 ms, VR = 0 V 530 475 A A TVJ = 45 C, t = 10 ms, VR = 0 V TVJ = 150 C, t = 10 ms, VR = 0V 1400 1130 A A Ptot TH = 25 C per diode 90 W VCES VGE TVJ = 25 C to 150 C Continuous 1200 20 V V IC25 TH = 25 C, DC 43 A TH = 80 C, DC 29 A ICM tp 90 A Ptot TH = 80 C 160 W 1200 9 14 90 V A A A TVJ = 45 C, t = 10 ms TVJ = 150 C, t = 10 ms 75 60 A A TH = 25 C 40 W -40...+150 150 -40...+125 C C C 3000 3600 V~ V~ 2-2.5 18-22 35 Nm lb.in. g Features Soldering connections for PCB mounting Isolation voltage 3600 V~ Ultrafast freewheeling diode Convenient package outline UL registered E 72873 Thermistor IFSM Ptot = Pulse width limited by TVJM TH = 80 C, rectangular d = 0.5 TH = 80 C, rectangular d = 0.5 TH = 80 C, tP = 10 s, f = 5 kHz VISOL Module TVJ TVJM Tstg 50/60 Hz IISOL 1 mA t = 1 min t=1s Md Mounting torque (M5) (10-32 unf) Weight typ. Data according to IEC 60747 IXYS reserves the right to change limits, test conditions and dimensions. © 2000 IXYS All rights reserved Drive Inverters with brake system Advantages 2 functions in one package No external isolation neccessary Easy to mount with two screws Suitable for wave soldering High temperature and power cycling capability Dimensions in mm (1 mm = 0.0394") 749 VRRM IFAV IFRMS IFRM Fast Recovery Diode IC80 IGBT Applications 1-2 VUB 71 Test Conditions IR VR = VRRM, VR = VRRM, TVJ = 25 C TVJ = 150 C 0.1 3 mA mA IF = 25 A, TVJ = 25 C 1.3 V VF VT0 rT Rectifier Diodes Rectifier Diodes Symbol Characteristic Values (TVJ = 25 C, unless otherwise specified) min. typ. max. For power-loss calculations only TVJ = 150 C 0.85 V 8.5 m RthJH per diode 1.42 K/W VBR(CES) VGE(th) VGS = 0 V, I C = 3 mA IC = 10 mA IGES VGE = ICES V V 500 nA TVJ = 25 C, VCE = VCES TVJ = 125 C, VCE = 0.8 VCES 700 1.5 A mA VCEsat VGE = 15 V, IC = 25 A 2.9 V tSC VGE = 15 V, VCE = 600 V, TVJ = 125 C, RG = 22 , non repetitive 10 s RBSOA VGE = 15 V, VCE = 800 V, TVJ = 125 C, RG = 22 , Clamped Inductive load, L = 100 H 50 A Cies VCE = 25 V, f = 1 MHz, VGE = 0 V td(on) td(off) tfi Eon Eoff VCE = 600 V, IC = 25 A VGE = 15 V, RG = 22 Inductive load; L = 100 H TVJ = 125 C IGBT 8 (SCSOA) 1200 5 20 V 4.5 nF 300 350 1600 6 8 ns ns ns mJ mJ RthJH 0.8 K/W VF VT0 rT IRM trr Fast Recovery Diode IR VR VR = VRRM, TVJ = 25 C = 800 V, TVJ =150 C IF = 12 A, TVJ = 25 C For power-loss calculations only TVJ = 150 C mA mA 2.7 V 1.65 V 46 m = 25 A, -diF/dt = 100 A/ s = 100 V 6.5 7 A IF VR = 1 A, = 30 V 50 70 ns -diF/dt = 100 A/ s 3.12 K/W Siemens Typ S 891/2,2k/+9 Creep distance on surface Strike distance in air Maximum allowable acceleration 2,2 k 12.7 mm 9.4 mm 50 m/s2 749 Module NTC dS dA a 0.2 6 IF VR RthJH R25 4 © 2000 IXYS All rights reserved 2-2