VUM 33-05 ID25 = 47 A VDSS = 500 V RDS(on) = 0.12 W Power MOSFET Stage for Boost Converters Module for Power Factor Correction VRRM (Diode) VDSS V V 600 500 5 Type 1 3 2 7 8 4 6 1 VDSS VDGR VGS TVJ = 25°C to 150°C TVJ = 25°C to 150°C; RGS = 10 kW Continuous 500 500 ±20 V V V TS = 85°C TS = 25°C TS = 25°C, tp = ① 33 47 130 A A A PD TS = 85°C 310 W IS ISM VGS = 0 V, TS = 25°C VGS = 0 V, TS = 25°C, tp = ① 33 130 A A TS = 85°C, rectangular d = 0.5 600 33 V A TVJ = 45°C, t = 10 ms (50 Hz) t = 8.3 ms (60 Hz) 300 320 A A TVJ = 150°C, t = 10 ms (50 Hz) t = 8.3 ms (60 Hz) 260 280 A A 59 W MOSFET Test Conditions Maximum Ratings 5 ● ● ● ● ● Boost Diode ● IFSM TS = 85°C ● IFSM Rectifier Diodes ● VRRM IdAV TVJ TJM Tstg VISOL Md Weight 800 54 V A TVJ = 45°C, t = 10 ms (50 Hz) t = 8.3 ms (60 Hz) 300 320 A A TVJ = 150°C, t = 10 ms (50 Hz) t = 8.3 ms (60 Hz) TS = 85°C Module P TS = 85°C, sinus 180° 50/60 Hz IISOL £ 1 mA t = 1 min t=1s Mounting torque (M5) 7 8 Package with DCB ceramic base plate Soldering connections for PCB mounting Isolation voltage 3600 V~ Low RDS(on) HDMOSTM process Low package inductance for high speed switching Ultrafast boost diode Kelvin source for easy drive Applications ● P 6 Features ● VRRM IFAV 3 4 VUM 33-05N Symbol ID ID IDM 2 Power factor pre-conditioner for SMPS, UPS, battery chargers and inverters Boost topology for SMPS including 1~ rectifier bridge Power supply for welding equipment Advantages 260 280 A A 50 W -40...+150 150 -40...+150 °C °C °C 3000 3600 V~ V~ ● ● ● ● ● ● ● 3 functions in one package Output power up to 8 kW No external isolation Easy to mount with two screws Suitable for wave soldering High temperature and power cycling capability Fits easiliy to all available PFC controller ICs 2-2.5/18-22 Nm/lb.in. 28 g ① Pulse width limited by TVJ IXYS reserves the right to change limits, test conditions and dimensions. © 2000 IXYS All rights reserved 1-4 VUM 33-05 Symbol Test Conditions Characteristic Values (TVJ = 25°C, unless otherwise specified) min. typ. max. VGS = 0 V, ID = 2 mA VDS = 20 V, ID = 20 mA VDSS VGS(th) 500 2 5 V V 350 A V = 0.8V R RRM 300 250 IFSM TVJ= 45°C 200 IGSS VGS = ±20 V, VDS = 0 V ±500 nA IDSS VDS = 500 V, VGS = 0 V 2 mA RDS(on) RGint TVJ = 25°C TVJ = 25°C 0.12 1.5 W W 1.5 S V 100 220 ns ns gfs VDS MOSFET 150 VDS = 15 V, IDS = 24 A, IDS = 12 A VGS = 0 V 30 td(on) td(off) VDS = 250 V, IDS = 12 A, VGS = 10 V Zgen. = 1 W, L-load Ciss Coss Crss VDS = 25 V, f = 1 MHz, VGS = 0 V VGS = 10 V 8.5 0.9 0.3 nF nF nF 350 nC 0.21 K/W 100 TVJ= 125°C 50 0 0.001 0.01 t 0.1 s 1 Fig. 1 Non-repetitive peak surge current (Rectifier Diodes) 500 A2s 400 Qg RthJS VDS = 250 V, ID = 12 A, VF IF = 33 A; TVJ = 25°C TVJ =150°C 1.75 1.5 V V IR VR VR = 600 V, TVJ = 25°C = 480 V, TVJ = 25°C TVJ =125°C 1.5 0.25 7 mA mA mA 100 1.21 V 9 mW 0 300 TVJ= 45°C I2t VT0 rT Boost Diode 200 IRM For power-loss calculations only TVJ = 125°C IF VR = 30 A; -diF/dt = 240 A/ms = 350 V, TVJ = 100°C Rectifier Diodes VF VT0 rT 11 A 1 t ms 10 Fig. 2 I2t for fusing (Rectifier Diodes) 1.1 K/W RthJS IR 10 TVJ= 125°C IF = 20 A, TVJ = 25°C TVJ =125°C 1.5 1.5 V V VR VR = 800 V TVJ = 25°C = 640 V, TVJ =125°C 0.25 2 mA mA For power-loss calculations only TVJ = 125°C RthJS © 2000 IXYS All rights reserved Dimensions in mm (1 mm = 0.0394") 1.18 V 12 mW 1.3 K/W 2-4 VUM 33-05 80 A 70 60 6V ID 50 ID 50 40 40 30 RDS(on) ID=18A 2.0 7V 60 2.5 80 A 70 10 V norm. 1.5 TVJ = 25°C TVJ = 125°C 1.0 30 VGS= 5 V 20 20 10 10 0.5 0 0 0 2 4 6 8 V 10 2 3 4 VDS 6 V 7 0.0 -50 VGS Fig. 3 Typ. output characteristic ID = f (VDS) (MOSFET) Fig. 4 Typ. transfer characteristics ID = f (VGS) (MOSFET) 1.4 BVDSS VGS(th) 1.2 5 12 Fig. 5 Typ. normalized RDS(on) = f (TVJ) (MOSFET) nF 10 VDS= 250 V VDSS ID = 18 A 8 VGS 1.0 norm. 100 °C 150 50 100 V VGS(th) 0 TVJ Ciss 10 IG = 10 mA C 6 0.8 Coss 1 4 0.6 2 0.4 -50 0 0 100 °C 150 50 Crss 0.1 0 100 TVJ Fig. 6 Typ. normalized BVDSS = f (TVJ) VGS(th) = f (TVJ) (MOSFET) 200 Qg 300 nC 400 0 5 10 15 V 20 VDS Fig. 7 Typ. turn-on gate charge characteristics, VGS = f (Qg) (MOSFET) Fig. 8 Typ. capacitances C = f (VDS), f = 1 MHz (MOSFET) 80 120 3.0 s A µC 100 2.5 80 Qrr 2.0 TVJ=100°C VR= 350 V max. 60 gfs IF 40 60 TVJ=150°C IF = 37 A IF = 74 A TVJ=100°C 1.5 IF = 37 A IF = 18.5 A TVJ= 25°C 40 1.0 20 0.5 20 typ. 0 0 20 40 60 80 A 100 ID Fig. 9 Typ. transconductance, gfs = f (ID) (MOSFET) © 2000 IXYS All rights reserved 0 0.5 1.0 1.5 VF 2.0 V 2.5 Fig. 10 Forward current versus voltage drop (Boost Diode) 0.0 10 100 -diF/dt A/ms 1000 Fig. 11 Recovery charge versus -diF/dt (Boost Diode) 3-4 VUM 33-05 40 A 0.6 1.4 TVJ=100°C 30 trr Kt IF = 37 A 0.4 IF = 74 A IRM IF = 18.5 A IF = 37 A max. 1.0 IF = 37 A 20 VR= 350 V 0.5 1.2 IRM TVJ=100°C µs max. VR= 350 V IF = 74 A 0.3 IF = 37 A 0.8 IF = 18.5 A 0.2 Qr 10 0.6 0.1 typ. typ. 0 0 100 200 ms 600 300 400 A/ 500 -diF/dt Fig. 12 Peak reverse current versus -diF/dt (Boost Diode) 0.4 20 60 °C 160 80 100 120 140 TVJ Fig. 13 Dynamic parameters versus junction temperature (Boost Diode) 18 V 16 VFR 40 12 kW 0.0 0 kW 10 14 VFR 12 A/ms 600 500 300 400 -diF/dt TS =85°C 8 Vin = 230 V/50 Hz Pout 200 Fig. 14 Recovery time versus -diF/dt (Boost Diode) 10 TS =85°C 100 Pout fc = 40 kHz 8 6 10 6 4 8 4 Vin = 115 V/60 Hz 6 tFR 2 4 2 0 100 200 Fig. 15 Peak forward voltage versus -diF/dt (Boost Diode) 9 fc = 80 kHz 8 Vin = 230 V/50 Hz 7 0 0 20 40 60 80 fc kHz 120 100 Fig. 16 Output power versus carrier frequency (Module) 1.5 kW K/W 0 50 100 150 Vin (RMS) 200 V 250 Fig. 17 Output power versus mains voltage VUM 33 1.2 Rectifier Diodes ZthJC Pout 6 0.9 5 4 0 ms 600 300 400 A/ 500 diF/dt fc = 80 kHz 2 Boost Diode Vin = 115 V/60 Hz 0.6 3 2 0.3 MOSFET 1 0 40 60 100 °C 120 80 TS Fig. 18 Output power versus heatsink temperature (Module) © 2000 IXYS All rights reserved 0.0 0.01 0.1 s 1 10 t Fig. 19 Transient thermal impedance junction to case for all devices 4-4