IXFN64N50PD2 IXFN64N50PD3 PolarHVTM HiPerFET Power MOSFET Boost & Buck Configurations (Ultra-fast FRED Diode) VDSS ID25 RDS(on) trr 3 3 miniBLOC, SOT-227 B E153432 4 N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode = 500V = 50A Ω ≤ 85mΩ ≤ 200ns 1 2 2 D2 2 4 D3 1 1 4 3 Symbol Test Conditions VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Maximum Ratings 500 500 V V VGSS VGSM Continuous Transient ± 30 ± 40 V V ID25 IDM TC = 25°C TC = 25°C, Pulse Width Limited by TJM 50 200 A A IA EAS TC = 25°C TC = 25°C 64 2.5 A J dV/dt IS ≤ IDM, VDD ≤ VDSS, TJ ≤150°C 10 V/ns PD TC = 25°C 625 W -55 ... +150 150 -55 ... +150 °C °C °C 1.5/13 1.3/11.5 Nm/lb.in. Nm/lb.in. 30 g TJ TJM Tstg Md Mounting Torque Terminal Connection Torque Weight D2 Pin Out: 1 = Source 2 = Gate 3 = Drain / Diode anode 4 = Diode cathode D3 Pin Out: 1 = Source / Diode Cathode 2 = Gate 3 = Drain 4 = Diode cathode Features z Fast Intrinsic Diode in Boost Configuration z International Standard Package z Encapsulating Epoxy Meets UL 94 V-0, Flammability Classification z miniBLOC with Aluminium Nitride Isolation z Avalanche Rated z Low Package Inductance Advantages z z z Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 500μA 500 VGS(th) VDS = VGS, ID = 8mA 3.0 IGSS VGS = ± 30V, VDS = 0V IDSS VDS = VDSS, VGS= 0V RDS(on) VGS = 10V, ID = 32A, Note 1 z V 5.5 V ± 200 nA TJ = 125°C 50 μA 1 mA 85 mΩ Applications z z z z z z © 2009 IXYS CORPORATION, All Rights Reserved Easy To Mount Space Savings Tightly Coupled FRED Diode High Power Density PFC Circuits Uninterruptible Power Supplies (UPS) Switched-Mode and Resonant-Mode Power Supplies AC and DC Motor Drives High Speed Power Switching Applications Robotics and Servo Controls DS99507F(4/09) IXFN64N50PD2 IXFN64N50PD3 Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) gfs Characteristic Values Min. Typ. Max. VDS = 20V, ID = 32A, Note 1 30 Ciss Coss VGS = 0V, VDS = 25V, f = 1MHz 50 S 9700 pF 970 pF 30 pF 30 ns 25 ns 85 ns 22 ns 150 nC 50 nC 50 nC Crss td(on) tr td(off) tf Resistive Switching Times VGS = 10V, VDS = 0.5 • VDSS, ID = 32A RG = 2Ω (External) Qg(on) Qgs SOT-227B (IXFN) Outline VGS= 10V, VDS = 0.5 • VDSS, ID = 32A Qgd (M4 screws (4x) supplied) 0.20 °C/W RthJC RthCS 0.05 °C/W Source-Drain Diode Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) IS VGS = 0V ISM VSD trr QRM IRM Characteristic Values Min. Typ. Max. 64 A Repetitive, Pulse Width Limited by TJM 250 A IF = IS, VGS = 0V, Note 1 1.5 V 200 ns IF = 25A, -di/dt = 100A/μs VR = 100V,VGS = 0V 0.6 μC 6.0 A FRED Diode Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) IF25 TC = 115°C VF IF = 30A, Note 1 IRM IF = 10A, diF/dt = -100A/μs, trr VR = 100V, VGE = 0V Characteristic Values Min. Typ. Max. A 2.5 1.8 2.75 TVJ = 150°C V V TVJ = 100°C 5.5 11.5 A 200 ns 0.9 °C/W RthJC RthCS 30 with Heat Transfer Paste 0.25 °C/W Note 1: Pulse Test, t ≤ 300μs; Duty Cycle, d ≤ 2%. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or moreof the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXFN64N50PD2 IXFN64N50PD3 Fig. 1. Output Characteristics @ 25ºC Fig. 2. Extended Output Characteristics @ 25ºC 160 70 VGS = 10V 8V 60 VGS = 10V 8V 140 7V 120 ID - Amperes ID - Amperes 50 6V 40 30 100 7V 80 60 6V 20 40 5V 10 20 5V 0 0 0.0 1.0 2.0 3.0 4.0 5.0 6.0 0 7.0 5 10 20 25 30 Fig. 4. RDS(on) Normalized to ID = 32A Value vs. Junction Temperature Fig. 3. Output Characteristics @ 125ºC 70 3.2 VGS = 10V 8V 7V 3.0 VGS = 10V 2.8 2.6 RDS(on) - Normalized 60 50 ID - Amperes 15 VDS - Volts VDS - Volts 6V 40 30 20 2.4 I D = 64A 2.2 2.0 I D = 32A 1.8 1.6 1.4 1.2 5V 1.0 10 0.8 0.6 0 0.4 0 2 4 6 8 10 12 14 16 -50 -25 0 Fig. 5. RDS(on) Normalized to ID = 32A Value vs. Drain Current 50 75 100 125 150 Fig. 6. Maximum Drain Current vs. Case Temperature 55 3.4 3.2 50 VGS = 10V TJ = 125ºC 3.0 45 2.8 40 2.6 ID - Amperes RDS(on) - Normalized 25 TJ - Degrees Centigrade VDS - Volts 2.4 2.2 2.0 1.8 1.6 35 30 25 20 15 1.4 TJ = 25ºC 10 1.2 5 1.0 0 0.8 0 20 40 60 80 100 ID - Amperes © 2009 IXYS CORPORATION, All Rights Reserved 120 140 160 -50 -25 0 25 50 75 TC - Degrees Centigrade 100 125 150 IXFN64N50PD2 IXFN64N50PD3 Fig. 8. Transconductance 90 80 80 70 70 g f s - Siemens ID - Amperes Fig. 7. Input Admittance 90 60 50 TJ = 125ºC 25ºC - 40ºC 40 TJ = - 40ºC 25ºC 60 50 125ºC 40 30 30 20 20 10 10 0 0 3.0 3.5 4.0 4.5 5.0 5.5 6.0 0 6.5 20 40 VGS - Volts Fig. 9. Forward Voltage Drop of Intrinsic Diode 80 100 120 140 Fig. 10. Gate Charge 240 10 220 9 200 VDS = 250V I D = 32A 8 I G = 10mA 180 7 160 VGS - Volts IS - Amperes 60 ID - Amperes 140 120 100 80 5 4 3 TJ = 125ºC 60 6 2 40 TJ = 25ºC 20 1 0 0 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 0 1.5 20 40 VSD - Volts 60 80 100 120 140 160 QG - NanoCoulombs Fig. 12. Maximum Transient Thermal Impedance Fig. 11. Capacitance 100,000 1.000 Ciss 10,000 Z(th)JC - ºC / W Capacitance - PicoFarads f = 1 MHz 1,000 0.100 Coss 100 Crss 10 0 5 10 15 20 25 30 35 40 VDS - Volts 0.010 0.001 0.01 0.1 1 10 Pulse Width - Seconds IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS REF: F_64N50P(9J)4-27-09 IXFN64N50PD2 IXFN64N50PD3 Figs.13-19 FRED Diode Curves 70 A 60 5 Qr I F 50 30 TVJ= 25°C 1 30 20 1 10 0 2 3 V 10 0 100 4 Fig. 13. Forward current IF versus VF 2.0 400 600 A/μs 800 1000 -diF/dt 220 120 TVJ= 100°C VR = 600V V FR t rr TVJ= 100°C IF = 30A V tfr 0.0 IF= 60A IF= 30A IF=15A 160 40 0.4 140 Qr 0 μs 0.8 40 0.5 1.2 t fr VFR 80 180 IRM 200 Fig. 15. Peak reverse current IRM versus -diF/dt 200 Kf 0 Fig. 14. Reverse recovery charge Qr versus -diF/dt ns 1.5 0 A/μs 1000 -diF/dt VF 1.0 IF= 60A IF= 30A IF=15A 40 2 TVJ=100°C 20 0 50 IRM IF= 60A IF= 30A IF= 15A TVJ=150°C TVJ= 100°C VR = 600V A 4 3 40 60 TVJ= 100°C VR = 600V μC 80 120 C 160 120 0 T VJ 200 400 600 0 800 1000 A/μs 0 200 400 -diF/dt Fig. 16. Dynamic parameters Qr, IRM versus TVJ Fig. 17. Recovery time trr versus -diF/dt 0.0 600 A/μs 800 1000 diF/dt Fig. 18. Peak forward voltage VFR and tfr versus diF/dt 2 1 Constants for ZthJC calculation: K/W i Z thJC 0.1 1 2 3 Rthi (K/W) ti (s) 0.465 0.179 0.256 0.0052 0.0003 0.0397 0.01 0.001 0.00001 0.0001 0.001 0.01 0.1 s t 1 Fig. 19 Transient thermal resistance junction to case © 2009 IXYS CORPORATION, All Rights Reserved IXYS REF: F_64N50P(9J)4-27-09