VUB 120 / 160 VRRM = 1200/1600 V IdAVM = 121/157 A Three Phase Rectifier Bridge with IGBT and Fast Recovery Diode for Braking System Preliminary Data VRRM Type VRRM V Type V 1200 VUB 120-12 NO1 1600 VUB 120-16 NO1 1200 VUB 160-12 NO1 1600 VUB 160-16 NO1 IFSM I2t Maximum Ratings VUB 120 VUB160 1200/1600 Rectifier Diodes VRRM IdAVM Test Conditions ● 1200/1600 V TC = 75°C, sinusoidal 120° 121 157 A TVJ = 45°C, TVJ = 150°C, t = 10 ms, VR = 0 V t = 10 ms, VR = 0 V 650 580 850 760 A A TVJ = 45°C, TVJ = 150°C, t = 10 ms, VR = 0 V t = 10 ms, VR = 0V 2110 1680 3610 2880 A A 130 160 W VCES VGE TVJ = 25°C to 150°C Continuous 1200 ± 20 1200 ± 20 V V IC25 IC75 TC = 25°C, DC TC = 75°C, DC TC = 75°C, d = 0.5 100 71 56 150 106 85 A A A ICM tp 200 300 A Ptot TC = 25°C 400 600 W Ptot Fast Recovery Diode IFSM IGBT TC = 25°C per diode VRRM IFAV IFRMS IFRM TC = 75°C, rectangular d = 0.5 TC = 75°C, rectangular d = 0.5 TC = 75°C, tP = 10 µs, f = 5 kHz TVJ = 45°C, TVJ = 150°C, t = 10 ms t = 10 ms TC = 25°C TVJ TVJM Tstg 1200 25 39 tbd V A A A 200 180 A A 100 W -40...+150 150 -40...+125 °C °C °C 3000 3600 V~ V~ t = 1 min t=1s Mounting torque (M5) (10-32 unf) 2-2.5 18-22 Nm lb.in. dS dA a Creep distance on surface Strike distance in air Maximum allowable acceleration 12.7 9.4 50 mm mm m/s2 Weight typ. 80 g Module Md Data according to IEC 60747 IXYS reserves the right to change limits, test conditions and dimensions. © 2000 IXYS All rights reserved ● ● ● ● Applications ● Drive Inverters with brake system Advantages 2 functions in one package Easy to mount with two screws Suitable for wave soldering High temperature and power cycling capability ● ● ● ● 50/60 Hz IISOL £ 1 mA VISOL ● ● Ptot = Pulse width limited by TVJM Features Soldering connections for PCB mounting Isolation voltage 3600 V~ Ultrafast diode Convenient package outline UL registered E 72873 Case and potting UL94 V-0 Thermistor Dimensions in mm (1 mm = 0.0394") 0 31 Symbol 1-4 VUB 120 / 160 Test Conditions IR VR = VRRM, VR = VRRM, TVJ = 25°C TVJ = 150°C IF = 150 A, TVJ = 25°C VF VT0 rT RthJC Rectifier Rectifier DiodesDiodes Symbol Characteristic Values (TVJ = 25°C, unless otherwise specified) min. typ. max. 0.3 5 mA mA VUB 120 VUB 160 1.59 1.49 V V For power-loss calculations only VUB 120 TVJ = 150°C VUB 160 VUB 120 VUB 160 0.80 0.75 6.1 4.6 V V mW mW per diode RthJH VUB 120 VUB 160 1.0 K/W 0.8 K/W VUB 120 1.3 K/W 1.1 K/W VUB 160 VBR(CES) VGE(th) VGS = 0 V, IC = 3 mA IC = 20 mA IC = 30 mA ICES TVJ = 25°C, VCE = 1200 V TVJ = 125°C, VCE = 0,8 ž VCES 8 8 V V V VUB 120 VUB 160 VUB 120 VUB 160 0.8 1.2 3 4.5 mA mA mA mA VUB 120 VUB 160 1200 5 5 VCEsat VGE = 15 V, IC = 50 A VGE = 15 V, IC = 75 A VUB 120 VUB 160 2.9 2.9 V V tSC VGE = 15 V, VCE = 720 V, TVJ = 125°C, RG = 11 W, non repetitive VUB 120 RG = 7 W, non repetitive VUB 160 10 10 ms ms VGE = 15 V, VCE = 960 V, TVJ = 125°C, Clamped Inductive load, L = 100 mH VUB 120 RG = 11 W RG = 7 W VUB 160 100 150 A A (SCSOA) IGBT RBSOA Cies VCE = 25 V, f = 1 MHz, VGE = 0 V td(on) td(off) Eon VCE = 720 V, IC = 50/75 A VGE = 15 V, RG = 11/7 W Inductive load; L = 100 mH TVJ = 125°C Eoff VUB 120 VUB 160 9 13.5 nF nF VUB 120 VUB 160 VUB 120 VUB 160 300 350 12 18 16 24 ns ns mJ mJ mJ mJ RthJC VUB 120 VUB 160 0.32 K/W 0.21 K/W RthJH VUB 120 VUB 160 0.45 K/W 0.30 K/W VF VT0 rT IRM trr Fast Recovery Diode IR VR VR = VRRM, TVJ = 25°C = 0,8 • VCES, TVJ = 125°C IF = 30 A, TVJ = 25°C For power-loss calculations only TVJ = 150°C 0.75 7 mA mA 2.55 V 1.65 18.2 V mW IF = 30 A, -diF/dt = 240 A/ms, VR = 540 V 16 18 A IF = 1 A, -diF/dt = 100 A/ms, VR = 30 V 40 60 ns 1.2 K/W 1.6 K/W NTC RthJC RthJH R25 4 Siemens S 891/2,2/+9 © 2000 IXYS All rights reserved 2.2 kW 2-4 VUB 120 140 300 W A 250 120 RthKA [K/W] Ptot 0.1 0.3 0.5 0.7 1 1.5 3 200 150 100 50 100 Id(AV)M 80 60 40 20 0 0 0 20 40 60 80 100 120 A 0 40 80 120 °C 160 TA Id(AV)M Fig. 1 Power dissipation versus direct output current and ambient temperature (Rectifier bridge) 200 1.50 150 TC 120 °C 160 W IC = 100A VGE = 13V 80 T =125°C Eoff VJ tfi RG = 4.7 VCE(sat) VGE = 15V 40 Fig. 2 Maximum forward current versus case temperature (Rectifier bridge) TVJ = 25°C A 0 1.25 Eoff VGE = 11V IC norm. norm. IC = 50A 100 1.00 50 0.75 under evaluation tfi IC = 25A VGE = 9V 0 0 2 4 6 V8 VCE Fig. 3 Output characteristics for braking (IGBT) VGE = 15V 0.50 C -50 -25 0 25 50 75 100 125 °150 TVJ Fig. 4 Temperature dependence of output saturation voltage, normalized (IGBT) A IC Fig. 5 Turn-off energy per pulse and fall time in collector current, normalized (IGBT) 1.3 T =125°C Eoff VJ IC = 25A tfi norm. to 4.7W 1.2 D=0.1 200 A IC 150 D=0.2 norm. D=0.3 100 1.1 D=0.4 Eoff under evaluation D=0.5 tfi D=0.7 1.0 50 TK = 80°C 0 0.0001 VUB 120 0.001 0.01 0.1 1 s tp Fig. 6 Collector current dependence on pulse width and duty cycle (IGBT) © 2000 IXYS All rights reserved 0.9 10 RG W Fig.7 Turn-off energy per pulse and fall time on RG (IGBT) 3-4 VUB 120 6 50 A 200 100 5 40 A 10 max. Qr IF IC TVJ=100°C VR= 540 V mC 4 IF = 30 A IF = 60 A IF = 30 A IF = 15 A 30 TVJ=150°C 20 3 TVJ=25°C 2 1 10 TVJ=125°C typ. W RG= 11 0.1 0 1 0 400 800 VCE 70 2 3 V 4 Fig. 9 Forward current versus voltage drop (Fast Diode) 1.4 ms 1.2 V 60 VFR 50 1 1 10 VF Fig. 8 Reverse baised safe operation area (IGBT) VFR 0 0 1200 V 1.0 0.8 40 0.8 30 0.6 50 A max. IF = 30 A IF = 60 A IF = 30 A IF = 15 A IRM IF = 30 A IF = 60 A IF = 30 A IF = 15 A 0.6 tFR TVJ=100°C VR= 540 V 40 max. trr 1.0 Fig. 10 Recovery charge versus -diF/dt (Fast Diode) TVJ=100°C VR= 540 V ms 100 A/ms 1000 -diF/dt 30 0.4 20 0.2 10 typ. 0.4 20 TVJ=125°C 0.2 IF = 30A tFR 10 0 0 100 200 typ. 0.0 300 400 A/ 500 ms 600 -diF/dt Fig.11 Peak forward voltage and recovery time versus -diF/dt (Fast Diode) 0.0 0 100 200 300 400 A/ 500 ms 600 -diF/dt Fig.12 Recovery time versus -diF/dt (Fast Diode) 1.4 0 0 100 200 300 400 A/ 500 ms 600 -diF/dt Fig.13 Peak reverse current versus -diF/dt (Fast Diode) 1.8 Fast Diode 1.6 K/W 1.2 ZthJK 1.0 per Rectifier Diode 1.2 IRM Kf 1.4 0.8 1.0 0.8 0.6 QR 0.6 0.4 IGBT 0.4 0.2 0.2 0.0 0 40 80 TVJ 120 °C 160 Fig.14 Dynamic parameters versus junction temperature (Fast Diode) © 2000 IXYS All rights reserved 0.0 0.001 VUB 120 0.01 0.1 1 10 s 100 t Fig.15 Transient thermal impedance junction to heatsink ZthJK 4-4