IXYS VUB120

VUB 120 / 160
VRRM = 1200/1600 V
IdAVM = 121/157 A
Three Phase Rectifier Bridge
with IGBT and Fast Recovery Diode
for Braking System
Preliminary Data
VRRM
Type
VRRM
V
Type
V
1200 VUB 120-12 NO1 1600 VUB 120-16 NO1
1200 VUB 160-12 NO1 1600 VUB 160-16 NO1
IFSM
I2t
Maximum Ratings
VUB 120 VUB160
1200/1600
Rectifier Diodes
VRRM
IdAVM
Test Conditions
●
1200/1600 V
TC = 75°C, sinusoidal 120°
121
157
A
TVJ = 45°C,
TVJ = 150°C,
t = 10 ms, VR = 0 V
t = 10 ms, VR = 0 V
650
580
850
760
A
A
TVJ = 45°C,
TVJ = 150°C,
t = 10 ms, VR = 0 V
t = 10 ms, VR = 0V
2110
1680
3610
2880
A
A
130
160
W
VCES
VGE
TVJ = 25°C to 150°C
Continuous
1200
± 20
1200
± 20
V
V
IC25
IC75
TC = 25°C, DC
TC = 75°C, DC
TC = 75°C, d = 0.5
100
71
56
150
106
85
A
A
A
ICM
tp
200
300
A
Ptot
TC = 25°C
400
600
W
Ptot
Fast Recovery Diode
IFSM
IGBT
TC = 25°C per diode
VRRM
IFAV
IFRMS
IFRM
TC = 75°C, rectangular d = 0.5
TC = 75°C, rectangular d = 0.5
TC = 75°C, tP = 10 µs, f = 5 kHz
TVJ = 45°C,
TVJ = 150°C,
t = 10 ms
t = 10 ms
TC = 25°C
TVJ
TVJM
Tstg
1200
25
39
tbd
V
A
A
A
200
180
A
A
100
W
-40...+150
150
-40...+125
°C
°C
°C
3000
3600
V~
V~
t = 1 min
t=1s
Mounting torque
(M5)
(10-32 unf)
2-2.5
18-22
Nm
lb.in.
dS
dA
a
Creep distance on surface
Strike distance in air
Maximum allowable acceleration
12.7
9.4
50
mm
mm
m/s2
Weight
typ.
80
g
Module
Md
Data according to IEC 60747
IXYS reserves the right to change limits, test conditions and dimensions.
© 2000 IXYS All rights reserved
●
●
●
●
Applications
●
Drive Inverters with brake system
Advantages
2 functions in one package
Easy to mount with two screws
Suitable for wave soldering
High temperature and power cycling
capability
●
●
●
●
50/60 Hz
IISOL £ 1 mA
VISOL
●
●
Ptot
= Pulse width limited by TVJM
Features
Soldering connections for PCB
mounting
Isolation voltage 3600 V~
Ultrafast diode
Convenient package outline
UL registered E 72873
Case and potting UL94 V-0
Thermistor
Dimensions in mm (1 mm = 0.0394")
0 31
Symbol
1-4
VUB 120 / 160
Test Conditions
IR
VR = VRRM,
VR = VRRM,
TVJ = 25°C
TVJ = 150°C
IF = 150 A,
TVJ = 25°C
VF
VT0
rT
RthJC
Rectifier
Rectifier
DiodesDiodes
Symbol
Characteristic Values
(TVJ = 25°C, unless otherwise specified)
min. typ. max.
0.3
5
mA
mA
VUB 120
VUB 160
1.59
1.49
V
V
For power-loss calculations only
VUB 120
TVJ = 150°C
VUB 160
VUB 120
VUB 160
0.80
0.75
6.1
4.6
V
V
mW
mW
per diode
RthJH
VUB 120
VUB 160
1.0 K/W
0.8 K/W
VUB 120
1.3 K/W
1.1 K/W
VUB 160
VBR(CES)
VGE(th)
VGS = 0 V, IC = 3 mA
IC = 20 mA
IC = 30 mA
ICES
TVJ = 25°C,
VCE = 1200 V
TVJ = 125°C, VCE = 0,8 ž VCES
8
8
V
V
V
VUB 120
VUB 160
VUB 120
VUB 160
0.8
1.2
3
4.5
mA
mA
mA
mA
VUB 120
VUB 160
1200
5
5
VCEsat
VGE = 15 V, IC = 50 A
VGE = 15 V, IC = 75 A
VUB 120
VUB 160
2.9
2.9
V
V
tSC
VGE = 15 V, VCE = 720 V, TVJ = 125°C,
RG = 11 W, non repetitive
VUB 120
RG = 7 W, non repetitive
VUB 160
10
10
ms
ms
VGE = 15 V, VCE = 960 V, TVJ = 125°C,
Clamped Inductive load, L = 100 mH
VUB 120
RG = 11 W
RG = 7 W
VUB 160
100
150
A
A
(SCSOA)
IGBT
RBSOA
Cies
VCE = 25 V, f = 1 MHz, VGE = 0 V
td(on)
td(off)
Eon
VCE = 720 V, IC = 50/75 A
VGE = 15 V, RG = 11/7 W
Inductive load; L = 100 mH
TVJ = 125°C
Eoff
VUB 120
VUB 160
9
13.5
nF
nF
VUB 120
VUB 160
VUB 120
VUB 160
300
350
12
18
16
24
ns
ns
mJ
mJ
mJ
mJ
RthJC
VUB 120
VUB 160
0.32 K/W
0.21 K/W
RthJH
VUB 120
VUB 160
0.45 K/W
0.30 K/W
VF
VT0
rT
IRM
trr
Fast Recovery Diode
IR
VR
VR
= VRRM,
TVJ = 25°C
= 0,8 • VCES, TVJ = 125°C
IF
= 30 A,
TVJ = 25°C
For power-loss calculations only
TVJ = 150°C
0.75
7
mA
mA
2.55
V
1.65
18.2
V
mW
IF
= 30 A, -diF/dt = 240 A/ms, VR = 540 V
16
18
A
IF
= 1 A, -diF/dt = 100 A/ms, VR = 30 V
40
60
ns
1.2 K/W
1.6 K/W
NTC
RthJC
RthJH
R25
4
Siemens S 891/2,2/+9
© 2000 IXYS All rights reserved
2.2
kW
2-4
VUB 120
140
300
W
A
250
120
RthKA [K/W]
Ptot
0.1
0.3
0.5
0.7
1
1.5
3
200
150
100
50
100
Id(AV)M
80
60
40
20
0
0
0
20
40
60
80
100
120 A
0
40
80
120 °C 160
TA
Id(AV)M
Fig. 1 Power dissipation versus direct output current and ambient temperature
(Rectifier bridge)
200
1.50
150
TC
120 °C 160
W
IC = 100A
VGE = 13V
80
T =125°C
Eoff VJ
tfi RG = 4.7
VCE(sat)
VGE = 15V
40
Fig. 2 Maximum forward current
versus case temperature
(Rectifier bridge)
TVJ = 25°C
A
0
1.25
Eoff
VGE = 11V
IC
norm.
norm.
IC = 50A
100
1.00
50
0.75
under evaluation
tfi
IC = 25A
VGE = 9V
0
0
2
4
6
V8
VCE
Fig. 3 Output characteristics for
braking (IGBT)
VGE = 15V
0.50
C
-50 -25 0 25 50 75 100 125 °150
TVJ
Fig. 4 Temperature dependence of
output saturation voltage,
normalized (IGBT)
A
IC
Fig. 5 Turn-off energy per pulse and
fall time in collector current,
normalized (IGBT)
1.3
T =125°C
Eoff VJ
IC = 25A
tfi
norm. to 4.7W
1.2
D=0.1
200
A
IC
150
D=0.2
norm.
D=0.3
100
1.1
D=0.4
Eoff
under evaluation
D=0.5
tfi
D=0.7
1.0
50
TK = 80°C
0
0.0001
VUB 120
0.001
0.01
0.1
1
s
tp
Fig. 6 Collector current dependence on pulse width and duty cycle (IGBT)
© 2000 IXYS All rights reserved
0.9
10
RG
W
Fig.7 Turn-off energy per pulse and
fall time on RG (IGBT)
3-4
VUB 120
6
50
A
200
100
5
40
A
10
max.
Qr
IF
IC
TVJ=100°C
VR= 540 V
mC
4
IF = 30 A
IF = 60 A
IF = 30 A
IF = 15 A
30
TVJ=150°C
20
3
TVJ=25°C
2
1
10
TVJ=125°C
typ.
W
RG= 11
0.1
0
1
0
400
800
VCE
70
2
3
V
4
Fig. 9 Forward current versus
voltage drop (Fast Diode)
1.4
ms
1.2
V
60
VFR
50
1
1
10
VF
Fig. 8 Reverse baised safe operation
area (IGBT)
VFR
0
0
1200 V
1.0
0.8
40
0.8
30
0.6
50
A
max.
IF = 30 A
IF = 60 A
IF = 30 A
IF = 15 A
IRM
IF = 30 A
IF = 60 A
IF = 30 A
IF = 15 A
0.6
tFR
TVJ=100°C
VR= 540 V
40
max.
trr
1.0
Fig. 10 Recovery charge versus
-diF/dt (Fast Diode)
TVJ=100°C
VR= 540 V
ms
100 A/ms 1000
-diF/dt
30
0.4
20
0.2
10
typ.
0.4
20
TVJ=125°C 0.2
IF = 30A
tFR
10
0
0
100
200
typ.
0.0
300 400 A/
500
ms 600
-diF/dt
Fig.11 Peak forward voltage and
recovery time versus -diF/dt
(Fast Diode)
0.0
0
100
200
300 400 A/
500
ms 600
-diF/dt
Fig.12 Recovery time versus -diF/dt
(Fast Diode)
1.4
0
0
100
200
300 400 A/
500
ms 600
-diF/dt
Fig.13 Peak reverse current versus
-diF/dt (Fast Diode)
1.8
Fast Diode
1.6
K/W
1.2
ZthJK
1.0
per Rectifier
Diode
1.2
IRM
Kf
1.4
0.8
1.0
0.8
0.6
QR
0.6
0.4
IGBT
0.4
0.2
0.2
0.0
0
40
80
TVJ
120 °C 160
Fig.14 Dynamic parameters versus
junction temperature (Fast Diode)
© 2000 IXYS All rights reserved
0.0
0.001
VUB 120
0.01
0.1
1
10
s
100
t
Fig.15 Transient thermal impedance junction to heatsink ZthJK
4-4