MWI 150-06 A8 IC25 = 170 A = 600 V VCES VCE(sat) typ. = 2.0 V IGBT Modules Sixpack Short Circuit SOA Capability Square RBSOA 13, 21 Preliminary data 1 2 5 6 9 10 19 17 15 3 4 7 8 11 12 14, 20 Features IGBTs Symbol Conditions VCES TVJ = 25°C to 150°C Maximum Ratings 600 V ± 20 V 170 115 A A ICM = 300 VCEK ≤ VCES A VGES IC25 IC80 TC = 25°C TC = 80°C RBSOA VGE = ±15 V; RG = 1.5 Ω; TVJ = 125°C Clamped inductive load; L = 100 µH tSC (SCSOA) VCE = VCES; VGE = ±15 V; RG = 1.5 Ω; TVJ = 125°C non-repetitive Ptot TC = 25°C Symbol Conditions 10 µs 515 W • NPT IGBT technology • low saturation voltage • low switching losses • switching frequency up to 30 kHz • square RBSOA, no latch up • high short circuit capability • positive temperature coefficient for easy parallelling • MOS input, voltage controlled • ultra fast free wheeling diodes • solderable pins for PCB mounting • package with copper base plate Advantages Characteristic Values (TVJ = 25°C, unless otherwise specified) min. typ. max. IC = 150 A; VGE = 15 V; TVJ = 25°C TVJ = 125°C VGE(th) IC = 3 mA; VGE = VCE ICES VCE = VCES; VGE = 0 V; TVJ = 25°C TVJ = 125°C IGES td(on) tr td(off) tf Eon Eoff 2.0 2.3 4.5 2.5 V V 6.5 V 1.5 mA mA 400 nA 1.1 VCE = 0 V; VGE = ± 20 V Inductive load, TVJ = 125°C VCE = 300 V; IC = 150 A VGE = ±15 V; RG = 1.5 Ω 125 30 225 35 2.3 4.6 ns ns ns ns mJ mJ Cies QGon VCE = 25 V; VGE = 0 V; f = 1 MHz VCE = 300V; VGE = 15 V; IC = 150 A 6.5 520 nF nC RthJC (per IGBT) IXYS reserves the right to change limits, test conditions and dimensions. © 2003 IXYS All rights reserved Typical Applications • AC motor control • AC servo and robot drives • power supplies 0.24 K/W 340 340 VCE(sat) • space savings • reduced protection circuits • package designed for wave soldering 1-2 MWI 150-06 A8 Diodes Equivalent Circuits for Simulation Symbol Conditions Maximum Ratings IF25 IF80 TC = 25°C TC = 80°C 210 130 Symbol Conditions Characteristic Values min. typ. max. VF IF = 150 A; VGE = 0 V; TVJ = 25°C TVJ = 125°C 1.9 1.4 IRM trr IF = 150 A; diF/dt = -750 A/µs; TVJ = 125°C VR = 300 V; VGE = 0 V 37 100 RthJC (per diode) Conduction A A 2.0 V V A ns 0.41 K/W IGBT (typ. at VGE = 15 V; TJ = 125°C) V0 = 1.1 V; R0 = 8 mΩ Free Wheeling Diode (typ. at TJ = 125°C) V0 = 1.1 V; R0 = 2.25 mΩ Thermal Response Module Conditions TVJ TJM Tstg operating VISOL Md Symbol Maximum Ratings -40...+125 +150 -40...+125 °C °C °C IISOL ≤ 1 mA; 50/60 Hz 2500 V~ Mounting torque (M5) 3-6 Nm Conditions Characteristic Values min. typ. max. Rpin-chip 1.8 dS dA Creepage distance on surface Strike distance in air RthCH with heatsink compound 10 10 Weight IXYS reserves the right to change limits, test conditions and dimensions. © 2003 IXYS All rights reserved IGBT (typ.) Cth1 = 0.295 J/K; Rth1 = 0.176 K/W Cth2 = 1.750 J/K; Rth2 = 0.064 K/W Free Wheeling Diode (typ.) Cth1 = 0.21 J/K; Rth1 = 0.317 K/W Cth2 = 1.28 J/K; Rth2 = 0.093 K/W mΩ mm mm 0.01 K/W 300 g Dimensions in mm (1 mm = 0.0394") 340 Symbol 2-2