IGBT Module IC80 = VCES = VCE(sat)typ. = PSII 75/06* Preliminary Data Sheet S15 R15 IGBTs A15 A7 A9 G15 V12 V13 N15 V9 V10 D1 A1 U1 V1 K1 Q1 G1 N1 V3 ECO-TOPTM 1 V6 t e e h r s e a t d a n d u l e l t i v t i n t s e a t t m c n te odu elop r p dev Symbol Conditions VCES TVJ = 25°C to 150°C VGES typical picture, for pin configuration see outline drawing *NTC optional Maximum Ratings IC25 IC80 TC = 25°C TC = 80°C ICM VCEK VGE = ±15 V; RG = 15 Ω; TVJ = 125°C RBSOA, Clamped inductive load; L = 100 µH tSC (SCSOA) VCE = VCES; VGE = ±15 V; RG = 15 Ω; TVJ = 125°C non-repetitive Ptot TC = 25°C Symbol Conditions VCE(sat) IC = 100 A; VGE = 15 V; TVJ = 25°C TVJ = 125°C VGE(th) IC = 1.5 mA; VGE = VCE ICES VCE = VCES; IGES VCE = 0 V; VGE = ± 20 V td(on) tr td(off) tf Eon Eoff 60 A 600 V 2.4 V 600 V ± 20 V 90 60 A A 150 VCES A 10 µs 294 W Characteristic Values (TVJ = 25°C, unless otherwise specified) min. typ. max. 2.4 2.8 4.5 VGE = 0 V; TVJ = 25°C TVJ = 125°C 2.8 V V 6.5 V 1.4 6.5 mA mA 150 nA Inductive load, TVJ = 125°C VCE = 300 V; IC = 60 A VGE = 15/0 V; RG = 15 Ω 150 60 450 40 3.2 2.2 ns ns ns ns mJ mJ Cies VCE = 25 V; VGE = 0 V; f = 1 MHz 4.2 nF RthJC RthJH (per IGBT) 0.85 0.43 K/W K/W with heatsink compound (0.42 K/m.K; 50 µm) Features • • • • • • Package with DCB ceramic base plate Isolation voltage 3000 V∼ Planar glass passivated chips Low forward voltage drop Leads suitable for PC board soldering UL Release applied Applications • • • • AC and DC motor control AC servo and robot drives Power supplies Welding inverters Advantages • • • • • Easy to mount with four screws Space and weight savings Improved temperature and power cycling capability High power density Small and light weight Caution: These Devices are sensitive to electrostatic discharge. Users should observe proper ESD handling precautions. 2005 POWERSEM reserves the right to change limits, test conditions and dimensions POWERSEM GmbH, Walpersdorfer Str. 53 D - 91126 Schwabach Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20 Reverse diodes (FRED) Symbol Conditions IF25 IF80 TC = 25°C TC = 80°C 130 80 Symbol Conditions Characteristic Values min. typ. max. VF IF = 60 A; TVJ = 25°C TVJ = 125°C 1.78 1.33 IF = 60 A; diF/dt = 500 A/µs; TVJ = 125°C VR = 300 V; VGE = 0 V 28 100 A ns with heatsink compound (0.42 K/m.K; 50 µm) 1.32 0.66 K/W K/W IRM trr RthJC RthJH Maximum Ratings A A 1.99 V V t e e h s r e a t d a n d u l e l t i v t i n t s e a t t m c n p te odu elo pr dev Temperature Sensor NTC Symbol R25 B25/50 Conditions Characteristic Values min. typ. max. T = 25°C 4.75 5.0 3375 5.25 kΩ K Module Symbol TVJ Tstg VISOL Md a Conditions Maximum Ratings -40...+125 -40...+150 °C °C IISOL ≤ 1 mA; 50/60 Hz 3000 V~ Mounting torque (M5) 3 26 50 Nm lb.in. m/s 2 Max. allowable acceleration Symbol dS dA Conditions Characteristic Values min. typ. max. Creepage distance on surface (Pin to heatsink) Strike distance in air (Pin to heatsink) 11.2 11.2 Weight mm mm 86 g Package style and outline Dimensions in mm (1mm = 0.0394“) 2005 POWERSEM reserves the right to change limits, test conditions and dimensions POWERSEM GmbH, Walpersdorfer Str. 53 D - 91126 Schwabach Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20