POWERSEM PSII6-12

TM
ECO-PAC 2
IGBT Module
IC25
=6A
VCES
= 1200 V
VCE(sat)typ. = 3.9 V
PSII 6/12*
Preliminary Data Sheet
S9
L9
N5
A5
N9
R5
D5
X18
W14
H5
A1
F3
G1
C1
K10
K13
PSII 6/12*
K12
IGBT
Symbol
Conditions
VCES
TVJ = 25°C to 150°C
VGES
1200
V
± 20
V
6
4.1
A
A
9.6
VCES
A
IC25
IC80
TC = 25°C
TC = 80°C
ICM
VCEK
VGE = 15/0 V; RG = 89 Ω; TVJ = 125°C
RBSOA, Clamped inductive load; L = 100 µH
tSC
(SCSOA)
VCE = VCES; VGE = 15/0 V; RG = 89 Ω; TVJ = 125°C
non-repetitive
10
µs
Ptot
TC = 25°C
40
W
Symbol
Conditions
VCE(sat)
IC = 4 A; VGE = 15 V; TVJ = 25°C
TVJ = 125°C
Characteristic Values
(TVJ = 25°C, unless otherwise specified)
min.
typ. max.
VGE(th)
IC = 0.1 mA; VGE = VCE
ICES
VCE = VCES;
VCE = 960 V;
IGES
VCE = 0 V; VGE = ± 20 V
td(on)
tr
td(off)
tf
Eon
Eoff
*NTC optional
Maximum Ratings
VGE = 0 V; TVJ = 25°C
VGE = 0 V; TVJ = 125°C
Inductive load, TVJ = 125°C
VCE = 600 V; IC = 4 A
VGE = 15/0 V; RG = 89 Ω
3.9
4.6
3
4.6
V
V
5
V
0.1
mA
mA
100
nA
0.5
30
20
290
90
0.4
0.2
ns
ns
ns
ns
mJ
mJ
Cies
QGon
VCE = 25 V; VGE = 0 V; f = 1 MHz
VCE = 960 V; VGE = 15 V; IC = 2 A
205
11
pF
nC
RthJC
RthJH
(per IGBT)
(per IGBT) with heatsink compound
6.2
3.1 K/W
K/W
Features
•
•
•
•
NPT IGBT’s
- positive temperature coefficient of
saturation voltage
- fast switching
FRED diodes
- fast reverse recovery
- low forward voltage
Industry Standard Package
- solderable pins for PCB mounting
- isolated DCB ceramic base plate
UL registered, E 148688
Applications
•
•
AC drives
power supplies with power factor
correction
Advantages
•
•
•
•
•
Easy to mount with two screws
Space and weight savings
Improved temperature and power
cycling capability
High power density
Small and light weight
Caution: These devices are sensitive
to electrostatic discharge. Users should
observe proper ESD handling precautions.
 2002 POWERSEM reserves the right to change limits, test conditions and dimensions
POWERSEM GmbH, Walpersdorfer Str. 53
D - 91126 Schwabach
Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20
PSII 6/12
Package style and outline
Dimensions in mm (1mm = 0.0394“)
Diodes
Symbol
Conditions
Maximum Ratings
IF25
IF80
TC = 25°C
TC = 80°C
Symbol
Conditions
VF
IF = 4 A;
IRM
trr
IF = ... A; diF/dt = ... A/µs; TVJ = 125°C
VR = 600 V; VGE = 0 V
tbd
tbd
A
ns
R thJC
RthJH
(per diode)
(per diode) with heatsink compound
7.6
3.8 K/W
K/W
12
8
A
A
Characteristic Values
min. t y p . max.
TVJ = 25°C
TVJ = 125°C
2.4
2.0
2.5
V
V
Temperature Sensor NTC
Symbol
Conditions
Characteristic Values
min. typ.
max.
R25
B25/50
T = 25°C
4.75
5.0
3375
5.25 kΩ
K
Component
Symbol
Conditions
Maximum Ratings
TVJ
Tstg
-40...+150
-40...+125
°C
°C
VISOL
IISOL ≤ 1 mA; 50/60 Hz
3000
V~
Md
Mounting torque (M4)
a
Max. allowable acceleration
1.5 - 2.0
14 - 18
50
Nm
lb.in.
m/s 2
Symbol
Conditions
Characteristic Values
min. typ. max.
dS
dA
Creepage distance on surface (Pin to heatsink)
Strike distance in air (Pin to heatsink)
11.2
11.2
Weight
mm
mm
24
g
 2002 POWERSEM reserves the right to change limits, test conditions and dimensions
POWERSEM GmbH, Walpersdorfer Str. 53
D - 91126 Schwabach
Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20