SEMICONDUCTOR KDR411S TECHNICAL DATA SCHOTTKY BARRIER TYPE DIODE LOW POWER RECTIFICATION FOR SWITCHING POWER SUPPLY. FEATURES E B L L Small Surface Mounting Type. (SOT-23) 2 H A 3 G High Reliability D Low Forward Voltage : VF max=0.5V 1 CONSTRUCTION Silicon epitaxial planar. CHARACTERISTIC ) RATING UNIT Peak Reverse Voltage VRM 40 V DC Reverse Voltage VR 20 V Average Forward Current IO 0.5 A IFSM 3 A Tj 125 Tstg -40 +125 Junction Temperature Storage Temperature Range MILLIMETERS _ 0.20 2.93 + B C 1.30+0.20/-0.15 1.30 MAX D 0.45+0.15/-0.05 E G 2.40+0.30/-0.20 1.90 H J 0.95 0.13+0.10/-0.05 K 0.00 ~ 0.10 L 0.55 0.20 MIN 1.00+0.20/-0.10 7 M N P M 3 SYMBOL Peak Forward Surge Current J K MAXIMUM RATING (Ta=25 P N C P DIM A 1. NC 2. ANODE 3. CATHODE 2 SOT-23 Marking Type Name ELECTRICAL CHARACTERISTICS (Ta=25 CHARACTERISTIC Lot No. U3 ) SYMBOL Forward Voltage 1 TEST CONDITION MIN. TYP. MAX. UNIT VF (1) IF=10mA - - 0.3 V VF (2) IF=500mA - - 0.5 V Reverse Current IR VR=10V - - 30 A Total Capacitance CT VR=10V, f=1MHz - 20 - pF 2002. 10. 2 Revision No : 1 1/2 KDR411S I R - VR I F - VF 10m REVERSE CURRENT I R (A) 100m Ta =1 25 Ta C =7 5 C Ta =2 5 C Ta =-2 5 C FORWARD CURRENT I F (A) 1 10m 1m 100µ 0 0.2 0.1 0.3 0.4 0.5 0.6 FORWARD VOLTAGE V F (V) Ta=125 C 1m Ta=75 C 100µ Ta=25 C 10µ 1µ 0 5 10 15 20 25 30 35 REVERSE VOLTAGE V R (V) C T - VR TOTAL CAPACITANCE C T (pF) 1K Ta=25 C f=1MHz 100 10 1 0 10 20 30 40 REVERSE VOLTAGE V R (V) 2002. 10. 2 Revision No : 1 2/2