SEMICONDUCTOR KDR393 TECHNICAL DATA SCHOTTKY BARRIER TYPE DIODE Low Voltage High Speed Switching. E FEATURES B M M ・Low Forward Voltage : VF =0.60V(Max.) ・Low Reverse Current : IR=5μA(Max.) D J 3 1 G A 2 DIM A B C MILLIMETERS _ 0.20 2.00 + _ 0.15 1.25 + _ 0.10 0.90 + D E 0.3+0.10/-0.05 _ 0.20 2.10 + G H 0.65 0.15+0.1/-0.06 J K CHARACTERISTIC SYMBOL RATING UNIT VRRM 40 V Reverse Voltage VR 40 V Average Forward Current IO 0.1 A IFSM 1 A Junction Temperature Tj 125 ℃ Storage Temperature Tstg -55～125 ℃ Repetitive Peak Reverse Voltage H L C MAXIMUM RATING (Ta=25℃) N K N 1.30 0.00-0.10 0.70 _ 0.10 0.42 + L M N 0.10 MIN 3 1. ANODE 1 2. ANODE 2 3. CATHODE 2 Non-repetitive peak surge current (10mA) 1 USM Marking Lot No. R9 Type Name ELECTRICAL CHARACTERISTICS (Ta=25℃) CHARACTERISTIC SYMBOL VF Forward Voltage TEST CONDITION MIN. TYP. MAX. IF=10mA - 0.36 - IF=100mA - 0.51 0.60 UNIT V Reverse Current IR VR=10V - - 5 μA Total Capacitance CT VR=0V, f=1MHz - 20 25 pF 2008. 9. 8 Revision No : 3 1/2 KDR393 IR - VR 25 REVERSE CURRENT IR (nA) TERMINAL CAPACITANCE CT (pF) CT - VR 20 15 10 5 0 0 10 20 30 40 10 3 10 2 10 0 10 20 30 40 REVERSE VOLTAGE VR (V) REVERSE VOLTAGE VR (V) FORWARD CURRENT IF (nA) IF - VF 10 8 10 7 10 6 10 5 10 4 10 3 10 2 0 200 400 600 800 FORWARD VOLTAGE VF (mV) 2008. 9. 8 Revision No : 3 2/2