SEMICONDUCTOR KDS221V TECHNICAL DATA SILICON EPITAXIAL PLANAR DIODE ULTRA HIGH SPEED SWITCHING APPLICATION. FEATURES E Low Forward Voltage : VF=1.0V (Max.). B Small Package : VSM. D G 1 3 K H A 2 MAXIMUM RATING (Ta=25 P P SYMBOL RATING UNIT VRM 20 V Reverse Voltage VR 20 V Maximum (Peak) Forward Current IFM 200 * mA 1. CATHODE 1 Average Forward Current IO 100 * mA 3. ANODE 1 / CATHODE 2 Surge Current (1 s) IFSM 300 * mA Power Dissipation PD 100 mW Junction Temperature Tj 150 Tstg -55 150 Storage Temperature Range J Maximum (Peak) Reverse Voltage C CHARACTERISTIC ) DIM MILLIMETERS _ 0.05 A 1.2 + _ 0.05 B 0.8 + _ 0.05 C 0.5 + _ 0.05 0.3 + D _ 0.05 1.2 + E _ 0.05 G 0.8 + H 0.40 _ 0.05 J 0.12 + _ 0.05 K 0.2 + P 5 3 2. ANODE 2 2 1 VSM Note : * Unit Rating. Total Rating=Unit Rating x 0.7 Marking DS ELECTRICAL CHARACTERISTICS (Ta=25 CHARACTERISTIC ) SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Forward Voltage VF IF=10mA - - 1.0 V Reverse Current IR VR=15V - - 0.1 A 2003. 10. 28 Revision No : 0 1/2 KDS221V IF - VF IF 100 0.1 Ta= 125 C Ta= 75 C Ta= 25 C Ta=-2 5 C Ta=12 5 C Ta=75 C Ta=25 Ta=-25 C C 1 0.01 1 0.1 0.01 0 0.4 0.8 1.2 1.6 2.0 0 2.4 0.4 0.8 1.2 FORWARD VOLTAGE VF (V) FORWARD VOLTAGE VF (V) I R - VR C T - VR 10 Ta=125 C 10 D1 Ta=125 C D2 Ta=100 C 1 D1 Ta=100 C D2 Ta=75 C Ta=75 C 0.1 TOTAL CAPACITANCE CT (pF) 100 REVERSE CURRENT IR (nA) 10 Ta=25 C Ta=-2 5 C 10 D2 25 C Ta=7 5 C D1+D2 Ta=1 D1 FORWARD CURRENT I F (mA) FORWARD CURRENT I F (mA) 100 D1 D2 0.01 0 5 10 REVERSE VOLTAGE VR (V) 2003. 10. 28 - VF Revision No : 0 15 1.6 f=1MHz (D2) 5 3 (D1) (D1+D2) 1 0.5 0.5 1 3 10 30 REVERSE VOLTAGE VR (V) 2/2