SEMICONDUCTOR KDR400S TECHNICAL DATA SCHOTTKY BARRIER TYPE DIODE High frequency rectification. Switching power supply. E B L L FEATURES 2 H A ) UNIT VRRM 40 V Reverse Voltage VR 40 V Average Forward Current IO 0.5 A IFSM 3 A Junction Temperature Tj 125 Storage Temperature Tstg -55 125 Repetitive Peak Reverse Voltage Non-repetitive peak surge current J RATING K SYMBOL P N CHARACTERISTIC 1 P C MAXIMUM RATING (Ta=25 3 G IO=500mA recification possible. D Low Forward Voltage : VF max=0.55V. DIM A MILLIMETERS _ 0.20 2.93 + B C 1.30+0.20/-0.15 1.30 MAX D 0.45+0.15/-0.05 E G 2.40+0.30/-0.20 1.90 H J 0.95 0.13+0.10/-0.05 K 0.00 ~ 0.10 L 0.55 0.20 MIN 1.00+0.20/-0.10 7 M N P M 3 1. NC 2. ANODE 3. CATHODE 2 1 SOT-23 Marking Lot No. Type Name ELECTRICAL CHARACTERISTICS (Ta=25 CHARACTERISTIC DJ ) SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Reverse Voltage VR IR=1mA 40 - - V Forward Voltage VF IF=0.5A - 0.45 0.55 V IR1 VR=10V - - 30 IR2 VR=25V - 8 50 CT1 VR=0V, f=1MHz - 132 - CT2 VR=10V, f=1MHz - 25 - Reverse Current Total Capacitance 2003. 2. 25 Revision No : 1 A pF 1/2 KDR400S I R - VR 140 10 REVERSE CURRENT I R (µA) TERMINAL CAPACITANCE C T (pF) C T - VR 120 100 80 60 40 20 0 2 10 1 0 10 20 30 40 REVERSE VOLTAGE VR (V) 0 10 20 30 40 REVERSE VOLTAGE V R (V) I F - VF FORWARD CURRENT I F (µA) 10 10 10 10 10 6 5 4 3 2 10 1 0 100 200 300 400 500 FORWARD VOLTAGE V F (mV) 2003. 2. 25 Revision No : 1 2/2