SEMICONDUCTOR KDR331V TECHNICAL DATA SCHOTTKY BARRIER TYPE DIODE HIGH SPEED SWITCHING. FEATURES E ᴌLow Forward Voltage : VF=0.25(Typ.) @IF=5mA B ᴌVery Small Package : VSM. D G 1 H A 2 SYMBOL RATING UNIT VRM 15 V Reverse Voltage VR 10 V Maximum (Peak) Forward Current IFM 100 * mA Average Forward Current IO 50 * mA IFSM 1* A Power Dissipation PD 100 mW Junction Temperature Tj 125 ᴱ Storage Temperature Range Tstg -55ᴕ125 ᴱ Operating Temperature Range Topr -40ᴕ100 ᴱ Surge Current (10ms) P P J Maximum (Peak) Reverse Voltage C CHARACTERISTIC 3 K MAXIMUM RATING (Ta=25ᴱ) DIM MILLIMETERS _ 0.05 A 1.2 + _ 0.05 B 0.8 + _ 0.05 C 0.5 + _ 0.05 D 0.3 + _ 0.05 E 1.2 + _ 0.05 0.8 + G 0.40 H _ 0.05 0.12 + J _ 0.05 K 0.2 + P 5 3 1. ANODE 1 2. ANODE 2 3. CATHODE 2 1 VSM * : Unit Rating. Total Rating=Unit Ratingᴧ1.5 Marking UW Type Name ELECTRICAL CHARACTERISTICS (Ta=25ᴱ) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT VF(1) IF=1mA - 0.21 - VF(2) IF=5mA - 0.25 0.30 VF(3) IF=50mA - 0.35 0.50 Reverse Current IR VR=10V - - 20 Ọ A Total Capacitance CT VR=0V, f=1MHz - 13 40 pF Forward Voltage 2001. 7. 25 Revision No : 0 V 1/2 KDR331V I R - VR I F - VF 10 Ta=23 C REVERSE CURRENT I R (A) FORWARD CURRENT I F (mA) 1 0.1 0 100 200 300 400 0.1 500 0 2 4 6 8 10 FORWARD VOLTAGE V F (mV) REVERSE VOLTAGE VR (V) C T - VR P - Ta 14 12 120 POWER DISSIPATION P (mW) TOTAL CAPACITANCE C T (pF) 1 0.01 0.01 12 10 8 6 4 2 0 100 80 60 40 20 0 0.01 0.1 1 REVERSE VOLTAGE VR (V) 2001. 7. 25 Ta=23 C Revision No : 0 10 20 0 25 50 75 100 125 AMBIENT TEMPERATURE Ta ( C) 2/2