SEMICONDUCTOR KIC7WZ34FK TECHNICAL DATA SILICON MONOLITHIC CMOS DIGITAL INTEGRATED CIRCUIT TRIPLE NON INVERTER FEATURES High output drive : 24mA(min.) @VCC=3V. Super high speed operation : tpd 2.4ns(typ.) @VCC=5V, 50pF. B Operation voltage range : VCC(opr)=1.65~5.5V. Latch-up performance : 200V or more (EIAJ) 1 A E D 2000V or more (MIL) DIM A B 8 Power down protection is provided on all inputs and outputs. D D ESD performance : C 500mA or more 5 D E F G 0.5 0.2+0.05/-0.04 _ 0.1 0.7+ _ 0.04 0.12 + H 0 ~ 0.1 F 4 C MILLIMETERS _ 0.1 2.0 + _ 0.1 3.1+ _ 0.1 2.3 + MARKING Type Name H Z34 G Lot No. US8 MAXIMUM RATINGS (Ta=25 CHARACTERISTIC PIN CONNECTION(TOP VIEW) ) SYMBOL RATING UNIT Power Supply Voltage VCC -0.5~6 V DC Input Voltage VIN -0.5~6 V DC Output Voltage VOUT -0.5~6 V Input Diode Current IIK -20 mA Output Diode Current IOK -20 mA DC Output Current IOUT 50 mA DC VCC/ground Current ICC 50 mA Power Dissipation PD 200 mW Storage Temperature Range Tstg -65 150 Lead Temperature (10s) TL 260 2002. 3. 7 Revision No : 1 1A 1 8 V CC 3Y 2 7 1Y 2A 3 6 3A GND 4 5 2Y 1/3 KIC7WZ34FK Truth Table Logic Diagram A Y L L H H 1 IN A OUT Y Recommended Operating Conditions CHARACTERISTIC SYMBOL VCC Supply Voltage VIN Input Voltage VOUT Output Voltage Topr Operating Temperature RATING UNIT 1.65~5.5 V 1.5~5.5 (Note1) 0~5.5 V 0~5.5 (Note2) 0~VCC (Note3) V -40~85 0~20 (VCC=1.8V 0.15V, 2.5V dt/dv Input Rise and Fall Time 0.2V) 0~10 (VCC=3.3V 0.3V) ns/V 0~5 (VCC=5.5V 0.5V) Note1 : Data retention only. Note2 : VCC=0V. Note3 : High or low state 2002. 3. 7 Revision No : 1 2/3 KIC7WZ34FK ELECTRICAL CHARACTERISTICS DC Characteristics TEST CONDITION CHARACTERISTIC High Level Ta=25 SYMBOL VIH - MIN. TYP. MAX. MIN. MAX. 1.65~1.95 0.75 VCC - - 0.75 VCC - - - 0.7 VCC - - 0.25 VCC 2.3~5.5 0.7 VCC VIL 1.65~1.95 - - 0.25 VCC 2.3~5.5 - - 0.3 VCC - 0.3 VCC 1.65 1.55 1.65 - 1.55 - 2.3 2.2 2.3 - 2.2 - 3.0 2.9 3.0 - 2.9 - 4.5 4.4 4.5 - 4.4 - IOH=-4mA 1.65 1.29 1.52 - 1.29 - IOH=-8mA 2.3 1.9 2.14 - 1.9 - IOH=-16mA 3.0 2.4 2.75 - 2.4 - IOH=-24mA 3.0 2.3 2.62 - 2.3 - IOH=-32mA 4.5 3.8 4.13 - 3.8 - 1.65 - 0 0.1 - 0.1 2.3 - 0 0.1 - 0.1 3.0 - 0 0.1 - 0.1 - IOH=-100 A High Level VOH VIN= VIH or VIL Output Voltage IOH=100 A Low Level VOL VIN=VIL UNIT VCC(V) Input Voltage Low Level Ta=-40~85 4.5 - 0 0.1 - 0.1 IOH=4mA 1.65 - 0.08 0.24 - 0.24 IOH=8mA 2.3 - 0.1 0.3 - 0.3 IOH=16mA 3.0 - 0.16 0.4 - 0.4 IOH=24mA 3.0 - 0.24 0.55 - 0.55 IOH=32mA 0.55 - 0.55 1 - V V V 4.5 - 0.25 Input Leakage Current IIN VIN=5.5V or GND 0~5.5 - - Power Off Leakage Current IOFF VIN or VOUT=5.5V 0.0 - - 1 - 10 A Quiescent Supply Current ICC VIN=5.5V or GND 1.65~5.5 - - 1 - 10 A 10 A AC Characteristics (unless otherwise specified, Input : tr=tf=3ns) TEST CONDITION CHARACTERISTIC Ta=25 SYMBOL VCC(V) Propagation delay time tPLH tPHL CL=50pF, RL=500 Input Capacitance CIN Power Dissipation Capacitance CPD (Note) UNIT MIN. TYP. MAX. MIN. MAX. 0.15 2.0 4.4 9.5 2.0 10.0 2.5 0.2 1.0 3.0 5.2 1.0 5.8 3.3 0.3 0.8 2.3 3.6 0.8 4.0 5.0 0.5 0.5 1.8 2.9 0.5 3.2 3.3 0.3 1.2 3.0 4.6 1.2 5.1 5.0 0.5 0.8 2.4 3.8 0.8 4.2 0~5.5 - 3.0 - - - 3.3 - 24 - - - 5.5 - 34 - - - 1.8 CL=15pF, RL=1M Ta=-40~85 ns ns pF pF Note : CPD is defined as the value of the internal equivalent capacitance which is calculated from the operating current consumption without load. Average operating current can be obtained by the equation : ICC(opr)=CPD VCC fIN+ICC/3 2002. 3. 7 Revision No : 1 3/3