SEMICONDUCTOR KTA1535T TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR RELAY DRIVERS, LAMP DRIVERS, MOTOR DRIVERS AND STROBES APPLICATION. E FEATURES B K DIM A B ᴌAdoption of MBIT Processes. 1 C 3 D D G ᴌHigh Speed Switching. 2 F A ᴌLow Collector-to-Emitter Saturation Voltage. G ᴌHigh Current Capacitance. ᴌUltrasmall-Sized Package permitting applied sets to be L J MAXIMUM RATING (Ta=25ᴱ) CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage VCBO -20 V Collector-Emitter Voltage VCEO -20 V Emitter-Base Voltage VEBO -5 V DC IC -3 Pulse ICP -5 IB 600 mA PC * 0.9 W Tj 150 ᴱ Tstg -55ᴕ150 ᴱ Collector Current Base Current Collector Power Dissipation Junction Temperature Storage Temperature Range 2.8+0.2/-0.3 _ 0.2 1.9 + 0.95 _ 0.05 0.16 + 0.00-0.10 0.25+0.25/-0.15 0.60 0.55 H I C ᴌHigh Allowable Power Dissipation. ᴌComplementary to KTC3535T E F G H I J K L made small and slim. MILLIMETERS _ 0.2 2.9 + 1.6+0.2/-0.1 _ 0.05 0.70 + _ 0.1 0.4 + J 1. EMITTER 2. BASE 3. COLLECTOR TSM A Marking Lot No. SD Type Name * Package mounted on a ceramic board (600Ὅᴧ0.8Ὂ) ELECTRICAL CHARACTERISTICS (Ta=25ᴱ) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Collector Cut-off Current ICBO VCB=-12V, IE=0 - - -0.1 Ọ A Emitter Cut-off Current IEBO VEB=-4V, IC=0 - - -0.1 Ọ A Collector-Base Breakdown Voltage V(BR)CBO IC=-10ỌA, IE=0 -20 - - V Collector-Emitter Breakdown Voltage V(BR)CEO IC=-1mA, IB=0 -20 - - V Emitter-Base Breakdown Voltage V(BR)EBO IE=-10ỌA, IC=0 -5 - - V Collector-Emitter Saturation Voltage VCE(sat) IC=-1.5A, IB=-30mA - -130 -165 mV Base-Emitter Saturation Voltage VBE(sat) IC=-1.5A, IB=-30mA - -0.85 -1.2 V DC Current Gain hFE VCE=-2V, IC=-500mA 200 - 560 Transition Frequency fT VCE=-2V, IC=-500mA - 160 - MHz VCB=-10V, f=1MHz - 45 - pF - 30 - - 90 - - 10 - Collector Output Capacitance Turn-On Time Cob PW=20µs DC <= 1% ton INPUT Swiitching Time Storage Time tstg IB1 I B2 1kΩ 50Ω tf RL VR 220µF Fall Time OUTPUT nS 470µF V BE =5V VCC =-5V -20IB1=20IB2=IC =-1.5A 2001. 6. 28 Revision No : 0 1/3 KTA1535T I C - V CE -14mA -10mA -8mA -1.4 -1.2 -6mA -1.0 -4mA -0.8 -0.6 -2mA -0.4 -0.2 0 COLLECTOR CURRENT I C (mA) -1.6 -200 -12mA mA -1.8 -1 6 COLLECTOR CURRENT I C (A) -2.0 I C - V CE IB=0mA 0 -0.2 -0.4 -0.6 -0.8 -0.6mA -140 -0.5mA -120 -0.4mA -100 -80 -0.3mA -60 -0.2mA -40 -0.1mA -20 IB=0mA 0 COLLECTOR-EMITTER VOLTAGE VCE (V) -1 500 300 100 50 -0.3 -1 -3 COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) DC CURRENT GAIN h FE VCE =-2V -0.1 -0.1 -0.05 -0.03 -0.01 -0.005 -0.01 -0.03 -0.3 -0.1 -0.05 -0.03 Revision No : 0 -1 -1 -3 -10 BASE-EMITTER SATURATION VOLTAGE VBE(sat) (V) COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (mV) -0.5 COLLECTOR CURRENT I C (A) 2001. 6. 28 -0.3 -3 COLLECTOR CURRENT I C (A) I C /I B =50 -0.3 -0.1 VBE(sat) - I C -1 -0.1 -5 I C /I B =20 -0.3 VCE(sat) - I C -0.03 -4 -0.5 COLLECTOR CURRENT I C (A) -0.01 -0.01 -3 VCE(sat) - I C 1K -0.03 -2 COLLECTOR-EMITTER VOLTAGE VCE (V) h FE - I C 30 -0.01 -0.7mA -160 0 -1.0 -0.8mA -180 I C /I B =50 -5 -3 -1 -0.5 -0.3 -0.1 -0.01 -0.03 -0.1 -0.3 -1 -3 COLLECTOR CURRENT I C (A) 2/3 KTA1535T I C - V BE COLLECTOR CURRENT I C (A) -3.5 VCE =-2V -3.0 -2.5 -2.0 -1.5 -1.0 -0.5 0 0 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 TRANSITION FREQUENCY f T (MHz) fT - IC 1K VCE =-2V 500 300 100 50 30 -0.01 -0.3 -0.1 -3 -1 COLLECTOR CURRENT I C (A) BASE-EMITTER VOLTAGE VBE (V) C ob - V CB SAFE OPERATING AREA -10 1K f=1MHz -5 COLLECTOR CURRENT I C (A) 500 300 100 50 30 10 -1 -3 -5 -10 -30 I C MAX.(PULSED) 10 -3 -1 I C MAX (CONTINUOUS) OP ER -0.5 AT mS 0m IO * S* N -0.3 -0.1 -0.05 * SINGLE NONREPETITIVE PULSE Ta=25 C CURVES MUST BE DERATED LINEARLY WITH INCREASE IN TEMPERATURE MOUNTED ON A CERAMIC BOARD (600mm 2 `0.8mm) -0.02 -0.2 COLLECTOR-BASE VOLTAGE VCB (V) DC 10 S* 0µ 50 S* 1m COLLECTOR OUTPUT CAPACITANCE C ob (pF) -0.03 -1 -3 -10 -20 COLLECTOR-EMITTER VOLTAGE V CE (V) COLLECTOR POWER DISSIPATION PC (W) Pc - Ta 1.2 MOUNTED ON A CERAMIC BOARD (600mm 2 `0.8mm) 1.0 0.8 0.6 0.4 0.2 0 0 20 40 60 80 100 120 140 160 AMBIENT TEMPERATURE Ta ( C) 2001. 6. 28 Revision No : 0 3/3