SEMICONDUCTOR KTC4380 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR HIGH VOLTAGE APPLICATION FEATURES ・High Voltage : VCEO=160V. A ・Large Continuous Collector Current Capability. C H ・Recommended for LED Drive Application. G J B E DIM A B C D E F G H J K D D K F F MAXIMUM RATING (Ta=25℃) SYMBOL RATING UNIT Collector-Base Voltage VCBO 160 V Collector-Emitter Voltage VCEO 160 V Emitter-Base Voltage VEBO 6 V Collector Current IC 1 A Base Current IB 0.5 A PC 0.5 PC* 1 Tj 150 ℃ Tstg -55～150 ℃ 1 Collector Power Dissipation Junction Temperature Storage Temperature Range * : Mounted on ceramic substrate (250mm2 × 2 3 SOT-89 W 0.8t) Marking Lot No. hFE Rank G2 CHARACTERISTIC MILLIMETERS 4.70 MAX _ 0.20 2.50 + 1.70 MAX 0.45+0.15/-0.10 4.25 MAX _ 0.10 1.50 + 0.40 TYP 1.75 MAX 0.75 MIN 0.5+0.10/-0.05 Type Name ELECTRICAL CHARACTERISTICS (Ta=25℃) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Collector Cut-off Current ICBO VCB=160V, IE=0 - - 1.0 μ A Emitter Cut-off Current IEBO VEB=6V, IC=0 - - 1.0 μ A V(BR)CEO IC=10mA, IB=0 160 - - V VCE=5V, IC=200mA 160 - 320 - VCE(sat)(1) IC=100mA, IB=10mA - 0.05 0.1 V VCE(sat)(2) IC=500mA, IB=50mA - - 1.5 V VCE(sat)(3) IC=120mA, IB=2mA - 0.13 - V 0.45 - 0.75 V VCE=5V, IC=200mA - 100 - MHz VCB=10V, IE=0, f=1MHz - 15 - pF Collector-Emitter Breakdown Voltage hFE DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Voltage VBE Transition Frequency fT Collector Output Capacitance 2010. 7. 13 Revision No : 3 Cob (Note) VCE=5V, IC=5mA 1/3 KTC4380 I C - V CE 1.0 COMMON 6 0.8 EMITTER Ta=25 C 4 3 0.6 2.5 2 0.4 1.5 1 0.2 0 I B =0.5mA 0 0 4 8 12 16 20 24 EMITTER VCE =5V 0.8 0.6 0.4 0.2 0 28 COMMON C Ta=25 C Ta=0 C 10 Ta=1 00 15 COLLECTOR CURRENT I C (A) COLLECTOR CURRENT IC (A) 1.0 I C - V BE 0 0.2 0.4 0.6 h FE - I C DC CURRENT GAIN h FE Ta=25 C 10 5 100 E VC V =2 DC CURRENT GAIN h FE 300 50 10 30 50 100 300 Ta=25 C Ta=0 C 100 50 COMMON EMITTER VCE =10V 20 1k Ta=100 C 300 VCE =5V 10 30 COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) COMMON EMITTER Ta=25 C 0.1 I C /I B =10 0.05 IC /I B =5 0.03 5 10 30 100 300 COLLECTOR CURRENT I C (mA) Revision No :3 100 300 1k VCE(sat) - I C 0.5 0.3 50 COLLECTOR CURRENT I C (mA) V CE(sat) - I C COLLECTOR-EMITTER SATURATION VOLTAGE V CE(sat) (V) 1.4 500 COMMON EMITTER COLLECTOR CURRENT I C (mA) 2010. 7. 13 1.2 h FE - I C 500 0.01 1.0 BASE-EMITTER VOLTAGE V BE (V) COLLECTOR-EMITTER VOLTAGE V CE (V) 20 0.8 1k 0.5 COMMON EMITTER 0.3 I C /IB =10 0.1 Ta=100 C Ta=25 C 0.05 Ta=0 C 0.03 0.01 5 10 30 100 300 1k COLLECTOR CURRENT I C (mA) 2/3 TRANSITION FREQUENCY f T (MHz) fT - IC 500 COMMON EMITTER 300 Ta=25 C VCE =5V 100 VCE =2V 50 30 10 2 5 10 30 100 400 COLLECTOR CURRENT I C (mA) I C MAX(PULSE) 10 m S I C MAX(CONTINUOUS) 1k 500 300 DC OP ER 100 AT * 10 0m S * IO 50 30 10 N * SINGLE NONREPETITIVE PULSE CURVES MUST BE DERATED LINEARLY WITH INCREASE IN TEMPERATURE 5 3 1 * S * 1m COLLECTOR CURRENT I C (mA) 3k COLLECTOR POWER DISSIPATION PC (W) SAFE OPERATING AREA 0.3 1 3 10 COLLECTOR OUTPUT CAPACITANCE Cob (pF) KTC4380 C ob - V CB 100 COMMON EMITTER f=1MHz 50 Ta=25 C 30 10 5 2 1 3 5 10 30 50 100 200 COLLECTOR-BASE VOLTAGE V CB (V) P C - Ta 1.2 1 MOUNTED ON CERAMIC SUBSTRATE (250mm 2 x0.8t) 2 Ta=25 C 1 1.0 0.8 0.6 2 0.4 0.2 0 0 20 40 60 80 100 120 140 160 AMBIENT TEMPERATURE Ta ( C) 30 100 300 COLLECTOR-EMITTER VOLTAGE V CE (V) 2010. 7. 13 Revision No : 3 3/3