SEMICONDUCTOR KTA1715 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR POWER AMPLIFIER APPLICATION. POWER SWITCHING APPLICATION. A B D C E FEATURES F Low Collector Saturation Voltage : VCE(sat)=-0.5V(Max.) (IC=-1A) G High Speed Switching Time : tstg=1 S(Typ.) H Complementary to KTC2814. DIM A B C D E F G H J K L M N O P J K MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage VCBO -50 V Collector-Emitter Voltage VCEO -50 V Emitter-Base Voltage VEBO -5 V IC -2 A Collector Current Collector Power Ta=25 Dissipation Tc=25 L Junction Temperature Storage Temperature Range 1.5 PC 150 Tstg -55 150 ELECTRICAL CHARACTERISTICS (Ta=25 1 2 3 P 1. EMITTER 2. COLLECTOR 3. BASE TO-126 ) SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Collector Cut-off Current ICBO VCB=-50V, IE=0 - - -0.1 A Emitter Cut-off Current IEBO VEB=-5V, IC=0 - - -0.1 A V(BR)CEO IC=-10mA, IB=0 -50 - - V hFE (1) (Note) VCE=-2V, IC=-0.5A 70 - 240 hFE (2) VCE=-2V, IC=-1.5A 40 - - Collector-Emitter Saturation Voltage VCE(sat) IC=-1A, IB=-0.05A - - -0.5 V Base-Emitter Saturation Voltage VBE(sat) IC=-1A, IB=-0.05A - - -1.2 V fT VCE=-2V, IC=-0.5A - 100 - MHz VCB=-10V, IE=0, f=1MHz - 30 - pF - 0.1 - 30Ω CHARACTERISTIC O N W 10 Tj M MILLIMETERS 8.3 MAX 5.8 0.7 _ 0.1 Φ3.2 + 3.5 _ 0.3 11.0 + 2.9 MAX 1.0 MAX 1.9 MAX _ 0.15 0.75 + _ 0.5 15.50 + _ 0.1 2.3 + _ 0.15 0.65 + 1.6 3.4 MAX - 1.0 - VCC =-30V - 0.1 - Collector-Emitter Breakdown Voltage DC Current Gain Transition Frequency Collector Output Capacitance Turn On Time Switching Time ton Storage Time tstg Fall Time tf Note : hFE(1) Classification 2003. 7. 24 Cob O:70 140, Y:120 Revision No : 3 OUTPUT 20µs IB2 IB1 INPUT I B2 I B1 -I B1=IB2=0.05A DUTY CYCLE < = 1% S 240 1/3 KTA1715 I B =-2mA -0.4 0 -0.4 -0.8 COMMON EMITTER Ta=25 C -1.2 -0.4 -0.2 0 0 -0.4 -0.8 -0.4 -0.2 0 0 -0.4 -0.8 -1.2 -2.0 -2.4 -2.8 -1.6 -2.0 -2.4 -2.8 20 -20 -0.8 -0.6 -0.4 -80 -1.0 -60 COMMON EMITTER Ta=-55 C -1 0 -16 0 8 1 -200 -0.6 -1.2 I B =-5mA COLLECTOR-EMITTER VOLTAGE V CE (V) -60 -80 -1 20 -30 -40 -20 A -5m IB = COLLECTOR-EMITTER VOLTAGE V CE (V) COMMON EMITTER Ta=100 C -0.8 -1.6 VCE - I C VCE - I C -1.0 -1.2 COLLECTOR CURRENT I C (A) 0 -2 -4 -6 -8 COLLECTOR EMITTER VOLTAGE VCE (V) -1.2 -80 -1 20 0 -16 -200 -40 -30 -20 -10 BASE CURRENT I B (mA) -0.6 -30 BASE-EMITTER VOLTAGE V BE (V) 0 -0.8 -40 2V -0.8 -1.0 -20 =- E -1.2 COMMON EMITTER Ta=25 C -10 -1.6 -18 -15 -12 -10 -8 -6 -4 -1.2 IB =-5mA -2.0 -20 VCE - I C COLLECTOR-EMITTER VOLTAGE VCE (V) -25 VC COLLECTOR CURRENT I C (A) STATIC CHARACTERISTICS 0 -16 -200 -0.2 0 0 -0.4 -0.8 -1.2 -1.6 -2.0 -2.4 -2.8 COLLECTOR CURRENT I C (A) COLLECTOR CURRENT I C (A) h FE - I C DC CURRENT GAIN hFE 1k COMMON EMITTER VCE =-2V 500 300 Ta=100 C Ta=25 C 100 Ta=-55 C 50 30 10 -0.01 -0.03 -0.1 -0.3 -1 -3 COLLECTOR CURRENT I C (A) 2003. 7. 24 Revision No : 3 2/3 KTA1715 -1 COMMON EMITTER I C /I B =20 -0.5 -0.3 -0.1 100 Ta= -0.05 C Ta=-55 C Ta=25 C -0.03 -0.01 -0.001 -0.03 -0.1 -0.3 -1 -0.5 COMMON EMITTER I C /IB =20 -0.3 Ta=-55 C -0.1 -0.05 -0.03 Ta=100 C -0.01 -3 COLLECTOR CURRENT I C (A) COLLECTOR CURRENT I C (A) Ta=25 C Ta=-55 C Ta=100 C COLLECTOR CURRENT I C (A) -1.5 -0.5 -0.4 -0.8 -1.2 -1 -3 -1.6 -2.0 BASE-EMITTER VOLTAGE V BE (V) -5 I MAX.(PULSED) * -3 C -1 -0.5 -0.3 -0.1 -0.05 -0.03 10 IC MAX.(CONTINUOUS) m 10 S 1s 0m * DC S * OP * ER AT IO N Ta =2 5 C * SINGLE NONREPETITIVE PULSE Ta=25 C CURVES MUST BE DERATED LINEARLY WITH INCREASE IN TEMPERATURE -0.01 -0.2 -0.5 -1 S 1m COMMON EMITTER VCE =-2V 0 -0.3 SAFE OPERATING AREA -2.0 0 -0.1 COLLECTOR CURRENT I C (A) I C - VBE -1.0 -0.03 -0.001 Ta=25 C -3 -10 * VCEO MAX. -1 VBE(sat) - I C BASE-TMITTER SATURATION VOLTAGE VBE(sat) (V) COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) VCE(sat) - I C -30 -100 COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR POWER DISSIPATION PC (W) Pc - Ta 12 10 8 6 4 2 0 0 40 80 120 160 200 AMBIENT TEMPERATURE Ta ( C) 2003. 7. 24 Revision No : 3 3/3