SEMICONDUCTOR KTA1544T TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR RELAY DRIVERS, LAMP DRIVERS, MOTOR DRIVERS AND STROBES APPLICATION. E FEATURES B K DIM A B ᴌAdoption of MBIT Processes. 1 C 3 D D G ᴌHigh Speed Switching. 2 F A ᴌLow Collector-to-Emitter Saturation Voltage. G ᴌLarge Current Capacitance. ᴌUltrasmall Package facilitates miniaturization in end products. L MAXIMUM RATING (Ta=25ᴱ) J SYMBOL RATING UNIT Collector-Base Voltage VCBO -30 V Collector-Emitter Voltage VCEO -30 V Emitter-Base Voltage VEBO -6 V DC IC -2 Pulse ICP -4 IB -400 mA PC * 0.9 W Tj 150 ᴱ Tstg -55ᴕ150 ᴱ Collector Current Base Current Collector Power Dissipation Junction Temperature Storage Temperature Range 2.8+0.2/-0.3 _ 0.2 1.9 + 0.95 _ 0.05 0.16 + 0.00-0.10 0.25+0.25/-0.15 0.60 0.55 H I C ᴌComplementary to KTC3544T. CHARACTERISTIC E F G H I J K L ᴌHigh Allowable Power Dissipation. MILLIMETERS _ 0.2 2.9 + 1.6+0.2/-0.1 _ 0.05 0.70 + _ 0.1 0.4 + J 1. EMITTER 2. BASE 3. COLLECTOR TSM A Marking Lot No. SN Type Name * Package mounted on a ceramic board (600Ὅᴧ0.8Ὂ) ELECTRICAL CHARACTERISTICS (Ta=25ᴱ) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Collector Cut-off Current ICBO VCB=-20V, IE=0 - - -0.1 Ọ A Emitter Cut-off Current IEBO VEB=-3V, IC=0 - - -0.1 Ọ A Collector-Base Breakdown Voltage V(BR)CBO IC=-10ỌA, IE=0 -30 - - V Collector-Emitter Breakdown Voltage V(BR)CEO IC=-1mA, IB=0 -30 - - V Emitter-Base Breakdown Voltage V(BR)EBO IE=-10ỌA, IC=0 -6 - - V Collector-Emitter Saturation Voltage VCE(sat) IC=-1.5A, IB=-75mA - -350 -600 mV Base-Emitter Saturation Voltage VBE(sat) IC=-1.5A, IB=-75mA - -0.85 -1.2 V DC Current Gain hFE VCE=-2V, IC=-100mA 200 - 560 Transition Frequency fT VCE=-10V, IC=-50mA - 150 - MHz VCB=-10V, f=1MHz - 32 - pF - 60 - - 350 - - 25 - Collector Output Capacitance Turn-On Time Cob PW=20µs DC <= 1% ton INPUT Swiitching Time Storage Time tstg IB1 I B2 RB 50Ω tf 24Ω VR 100µF Fall Time OUTPUT nS 470µF V BE =5V VCC =-12V -20IB1=20IB2=IC =-500mA 2001. 11. 7 Revision No : 0 1/3 KTA1544T h FE - I C I C - V CE -20 COLLECTOR CURRENT I C (A) -1.8 -1.6 -40 -10mA 0m -8mA -6mA -25 -1.2 1K mA -30 mA -20 mA A -1.4 A 0m -5 DC CURRENT GAIN h FE 0m -15 A -1 0mA 00 mA -2.0 -1.0 -0.8 -4mA -0.6 -2mA -0.4 -0.2 0 I B =0mA 0 -0.2 -0.4 -0.6 -0.8 VCE =-2V 500 300 100 50 30 -0.01 -1.0 COLLECTOR-EMITTER VOLTAGE VCE (V) -0.03 -0.1 -2.0 COLLECTOR CURRENT I C (A) COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) I C - VBE IC /I B =10 -0.5 -0.3 -0.1 -0.05 -0.03 -0.01 -0.005 -0.01 V CE =-2V -1.6 -1.2 -0.8 -0.4 0 -0.03-0.05 -0.1 -0.3 -0.5 -1 -2 0 -0.2 -0.4 1K VCE =-10V 500 300 100 50 30 -0.1 -0.3 COLLECTOR CURRENT I C (A) 2001. 11. 7 -0.8 -1.0 -1.2 C ob - V CB Revision No : 0 -0.1 -0.2 COLLECTOR OUTPUT CAPACITANCE C ob (pF) TRANSITION FREQUENCY f T (MHz) fT - IC -0.03 -0.6 BASE-EMITTER VOLTAGE V BE (V) COLLECTOR CURRENT I C (A) 10 -0.01 -2 -1 COLLECTOR CURRENT I C (A) VCE(sat) - I C -1 -0.3 100 f=-1MHz 70 50 30 10 -1 -3 -5 -10 -30 -50 COLLECTOR-BASE VOLTAGE VCB (V) 2/3 KTA1544T Pc - Ta -10 10 m -0.5 -0.3 -0.1 -0.05 S* DC 1m -1 S* * 10 S* I C MAX (CONTINUOUS) S 0µ -3 I C MAX.(PULSED) 0µ 50 COLLECTOR CURRENT I C (A) -5 10 0m S* OP ER AT IO N SINGLE NONREPETITIVE * PULSE Ta=25 C CURVES MUST BE DERATED LINEARLY WITH INCREASE IN TEMPERATURE MOUNTED ON A CERAMIC BOARD (600mm 2 `0.8mm) -0.02 -0.2 -0.5 -1 -3 -5 -10 COLLECTOR POWER DISSIPATION PC (W) SAFE OPERATING AREA 1.4 MOUNTED ON A CERAMIC BOARD (600mm 2 `0.8mm) 1.2 1.0 0.8 0.6 0.4 0.2 0 0 20 40 60 80 100 120 140 160 AMBIENT TEMPERATURE Ta ( C) -30 -50 COLLECTOR-EMITTER VOLTAGE V CE (V) 2001. 11. 7 Revision No : 0 3/3